Deposition of ferromagnetic shape memory alloy thin films by dc unbalanced magnetron sputtering
Deposition of ferromagnetic shape memory alloy thin films by dc unbalanced magnetron sputtering
批准号:
12650093
负责人:
KOTERAZAWA Keiji
金额:
$0.45万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2000
资助国家:
日本
项目状态:
已结题
起止时间:
2000 至 2001
中文摘要
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英文摘要
Fe-Pd films were deposited onto fused quartz glasses by dc magnetron sputtering. When an arc-melted and homogenized Fe-30 at. %Pd alloy disk was used as a target, Fe-Pd films fabricated were found to contain about 24 at. % Pd. The target configuration was then modified by adding wires of Pd on the target so as to tailor films with desired Pd content within an accuracy of 1 at. %Pd. Fe-Pd films with four alloy compositions were fabricated and analyzed by XRD, SEM and EDX techniques for as-deposited and heat-treated conditions. Similar to bulk alloy specimens, the Fe-28〜31.3 at.%Pd films also showed a thermoelastic fcc-to-fct martensite transformation during thermal cycling after annealing at 900 ℃ followed by iced water quenching. The films were found to be ferromagnetic and show two-way SM effects upon heating and cooling.Above mentioned method has a disadvantage for depositing thick films because the Pd wires arranged on the alloy target should be thinning during sputtering. Therefore, we constructed a dual source magnetron sputtering apparatus, and succeeded in depositing the thicker films with controlled composition. The martensite transformation behavior of thicker films were found to be nearly the same as the films deposited from alloy target.
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S.Inoue: "Deposition of ferromagnetic Fe-Pd shape memory alloy thin films by dcmagnetron sputtering"J. Mater. Proc. Technol., Special Issue in CD-ROM. 177[3]. E08-07.PDF (2001)
S.Inoue:“通过直流磁控溅射沉积铁磁 Fe-Pd 形状记忆合金薄膜”J。
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通讯作者:
S. Inoue, K. Inoue, K. Koterazawa, K. Mizuuchi and T. Tsurui: "Deposition of Ferromagnetic Fe-Pd Shape Memory Alloy Thin Films by de-Magnetron Sputtering"J. Mater. Processing Technol. 117 Special issue, CD-ROM E08_07. PDF. (2001)
S. Inoue、K. Inoue、K. Koterazawa、K. Mizuuchi 和 T. Tsurui:“通过去磁控管溅射沉积铁磁 Fe-Pd 形状记忆合金薄膜”J。
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通讯作者:
S. Inoue, K. Inoue, K. Koterazawa and K. M izuuchi: "Shape memory behavior of Fe-Pd alloy thin films prepared by dc magnetron sputtering"Mater. Sci Eng. A. (accepted). (2002)
S. Inoue、K. Inoue、K. Koterazawa 和 K. M izuuchi:“直流磁控溅射制备的 Fe-Pd 合金薄膜的形状记忆行为”。
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通讯作者:
S.Inoue: "Shape memory behavior of Fe-Pd alloy thin films prepared by dc magnetron sputtering"Mater. Sci. Eng. A. (Accepted). (2002)
S.Inoue:“直流磁控溅射制备Fe-Pd合金薄膜的形状记忆行为”。
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作者:
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通讯作者:
S.Inoue: "Deposition of ferromagnetic Fe-Pd shape memory alloy thin films by dc-magnetron sputtering"I.Mater.Proc.Technol., Special issue in CD-ROM. 117[3]. E08-07.PDF (2001)
S.Inoue:“通过直流磁控管溅射沉积铁磁 Fe-Pd 形状记忆合金薄膜”I.Mater.Proc.Technol.,CD-ROM 特刊。
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作者:
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通讯作者:
Development of magnetic field driven microactuators made by ferromagnetic shape memory alloy thin films
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批准号:14350061
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.8万
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财政年份:2002
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负责人:KOTERAZAWA Keiji
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依托单位:
Surface modifications by metal-nitride functionally gradient films
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批准号:04650071
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.22万
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财政年份:1992
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负责人:KOTERAZAWA Keiji
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依托单位:
Surface Modification of Materials by Ultra-hard Nitride Multilayered Films
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批准号:02650059
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.09万
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财政年份:1990
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负责人:KOTERAZAWA Keiji
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依托单位:
海外基金