Surface modifications by metal-nitride functionally gradient films

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The rf reactive sputtering of metal target on Ar+N_2 mixed gas was applied to fabricate the compositionally gradient films consisting of metal and nitride phases. In this work, two methods are presented to form the ompositionally gradient metaL-nitride films. The first is the N_2 partial pressure-to-total pressure ratio (P_<N2>/P_<total>) control method, and the other is the rf power control method. The compositionally gradient metal-nitride films were deposited onto slide glasses, and the subsrate temperature were room temperature and 200ﾟC.The crystallographic structure, the compositon and the morphology of deposited films were characterized by X-ray diffractometry, Auger electron spectroscopy and scanning electron microscopy, respectively. For comparison, two metal targets(Al and Ti) were used to deposit the compositionally gradient films.Both P_<N2>/P_<total> and rf power cotrol method can be used to grow compositionally gradient films. It is demonstrated that the deposited film has the structure with a nitride layr on a metal layr. The morphology of the films is greatly dependent on the substrate temperature, independently of the deposition method. It is also shown that the optical emission spectroscopy and the mass spectroscopy are useful tools to monitor the growth of these films.