Surface modifications by metal-nitride functionally gradient films
Surface modifications by metal-nitride functionally gradient films
批准号:
04650071
负责人:
KOTERAZAWA Keiji
金额:
$1.22万
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1992
资助国家:
日本
项目状态:
已结题
起止时间:
1992 至 1993
中文摘要
采用Ar+N_2混合气体射频反应溅射金属靶制备了由金属相和氮化物相组成的成分梯度薄膜。本文提出了两种制备金属-氮化物薄膜的方法。第一种是N_2分压/总压比(P_<N2>/P_<total>)控制方法,第二种是射频功率控制方法。在室温和200 ℃下,在载玻片上沉积了具有成分梯度的金属氮化物薄膜,用X射线衍射仪、俄歇电子能谱仪和扫描电子显微镜分别对沉积薄膜的晶体结构、成分和形貌进行了表征。作为对比,用Al和Ti两种金属靶存款了成分梯度薄膜,P_<N2>/P_<total>和射频功率控制法都可以用来生长成分梯度薄膜。结果表明,沉积膜具有金属层上氮化物层的结构。膜的形态在很大程度上取决于衬底温度,独立于沉积方法。它也表明,光学发射光谱和质谱是有用的工具,以监测这些薄膜的生长。
英文摘要
The rf reactive sputtering of metal target on Ar+N_2 mixed gas was applied to fabricate the compositionally gradient films consisting of metal and nitride phases. In this work, two methods are presented to form the ompositionally gradient metaL-nitride films. The first is the N_2 partial pressure-to-total pressure ratio (P_<N2>/P_<total>) control method, and the other is the rf power control method. The compositionally gradient metal-nitride films were deposited onto slide glasses, and the subsrate temperature were room temperature and 200゚C.The crystallographic structure, the compositon and the morphology of deposited films were characterized by X-ray diffractometry, Auger electron spectroscopy and scanning electron microscopy, respectively. For comparison, two metal targets(Al and Ti) were used to deposit the compositionally gradient films.Both P_<N2>/P_<total> and rf power cotrol method can be used to grow compositionally gradient films. It is demonstrated that the deposited film has the structure with a nitride layr on a metal layr. The morphology of the films is greatly dependent on the substrate temperature, independently of the deposition method. It is also shown that the optical emission spectroscopy and the mass spectroscopy are useful tools to monitor the growth of these films.
期刊论文(6)
专著(0)
科研奖励(0)
会议论文
井上 尚三: "高周波反応性スパッタリング法によるAl-AlN傾斜機能薄膜の作製" 日本金属学会誌. 58. 194-200 (1994)
Shozo Inoue:“通过高频反应溅射法制备 Al-AlN 功能梯度薄膜”,日本金属学会学报 58. 194-200 (1994)。
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通讯作者:
井上,尚三: "高周波反応性スパッタリング法によるAl-AlN系傾斜機能薄膜の作製" 日本金属学会誌. 58. 194-200 (1994)
Inoue, Shozo:“通过高频反应溅射法制备 Al-AlN 功能梯度薄膜”,日本金属学会杂志 58. 194-200 (1994)。
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作者:
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通讯作者:
S.Inoue, H.Uchida, Y.Tokunaga, K.Takeshita, K.Kotrazawa: "Preparation of Compositionally Gradient Al-A1N Films by rf Reactive Sputtering" J.Jpn.Inst.Metals. 58[2]. pp.194-200 (1994)
S.Inoue、H.Uchida、Y.Tokunaga、K.Takeshita、K.Kotrazawa:“通过射频反应溅射制备成分梯度 Al-A1N 薄膜”J.Jpn.Inst.Metals。
DOI:
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通讯作者:
Development of magnetic field driven microactuators made by ferromagnetic shape memory alloy thin films
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批准号:14350061
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.8万
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财政年份:2002
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负责人:KOTERAZAWA Keiji
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依托单位:
Deposition of ferromagnetic shape memory alloy thin films by dc unbalanced magnetron sputtering
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批准号:12650093
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$0.45万
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财政年份:2000
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负责人:KOTERAZAWA Keiji
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依托单位:
Surface Modification of Materials by Ultra-hard Nitride Multilayered Films
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批准号:02650059
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.09万
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财政年份:1990
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负责人:KOTERAZAWA Keiji
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依托单位:
海外基金