Growth, structural and optical properties of new concept tetrahedral crystals

1.本文对Grimm-Sommerfeld（GS）孪晶材料ZnIn_2Te_4、ZnGa_2Te_4和CdGa_2Te_4进行了研究，获得了以下结果：（1）成功地生长出了大块的GS孪晶。(2)成功获得大块孪晶GS材料，尽管它们含有晶体成分作为夹杂物。(3)结果表明，用化学机械抛光法可以制备光学级的大块非晶和晶态样品。这些材料的光学性质由椭圆偏振光谱法测定。(4)通过能带结构计算和与实验数据的比较，研究了ZnIn_2Te_4的光学和介电性质。(5)成功地测量了孪晶GS的光致发光谱.的临界点参数的温度依赖性的III-V族化合物半导体，GaP，和II-VI族化合物半导体，CdTe，ZnTe，CdS，和ZnO，已被确定通过执行光反射测量。还对III-V族半导体合金Ga_ In_ P.3进行了电反射测量<0.5><0.5>。用椭圆偏振光谱仪、原子力显微镜、X射线光电子能谱（XPS）和接触角测量等方法研究了硅表面在TMAH（有机碱）、NaF、NH_4HF_2等溶液中的化学处理效应。GaN和InN薄膜也已通过反应射频磁控溅射沉积在硅衬底上。这些III-V族氮化物薄膜的性能进行了研究，使用X射线衍射，光谱椭偏仪，和原子力显微镜。

1.The following results were obtained on twin Grimm-Sommerfeld (GS) materials, ZnIn_2Te_4, ZnGa_2Te_4, and CdGa_2Te_4 :(1) Succeed in growing bulk twin GS crystals.(2) Succeed in obtaining bulk twin GS materials, although they contain crystalline components as inclusions.(3) It is shown that it is possible to prepare bulk amorphous and crystalline samples of optical grade by chemomechanical polishing. The optical properties of these materials are determined by spectroscopic ellipsometry.(4) The optical and dielectric properties of ZnIn_2Te_4 have been studied by performing band-structure calculation and by comparing these calculated results with the experimental data.(5) Succeed in measuring photoluminescence spectra of twin GS crystals.2. The temperature dependence of the critical-point parameters for the III-V compound semiconductor, GaP, and II-VI compound semiconductors, CdTe, ZnTe, CdS, and ZnO, have been determined by performing photoreflectance measurements. The electroreflectance measurements have also been performed on III-V semiconductor alloy Ga_<0.5>In_<0.5>P.3. Chemical treatment effects of silicon surfaces in TMAH (organic alkaline), NaF, NH_4HF_2 solutions, etc. have been studied using spectroscopic ellipsometry, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), and contact-angle measurements. GaN and InN films have also been deposited on silicon substrates by reactive rf-magnetron sputtering. Properties of these III-V nitride films have been investigated using X-ray diffraction, spectroscopic ellipsometry, and atomic force microscopy.