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Growth, structural and optical properties of new concept tetrahedral crystals

新概念四面体晶体的生长、结构和光学性质

基本信息

批准号：
12650301
负责人：
ADACHI Sadao
金额：
$ 1.09万
依托单位：
Gunma University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

项目摘要

1.The following results were obtained on twin Grimm-Sommerfeld (GS) materials, ZnIn_2Te_4, ZnGa_2Te_4, and CdGa_2Te_4 :(1) Succeed in growing bulk twin GS crystals.(2) Succeed in obtaining bulk twin GS materials, although they contain crystalline components as inclusions.(3) It is shown that it is possible to prepare bulk amorphous and crystalline samples of optical grade by chemomechanical polishing. The optical properties of these materials are determined by spectroscopic ellipsometry.(4) The optical and dielectric properties of ZnIn_2Te_4 have been studied by performing band-structure calculation and by comparing these calculated results with the experimental data.(5) Succeed in measuring photoluminescence spectra of twin GS crystals.2. The temperature dependence of the critical-point parameters for the III-V compound semiconductor, GaP, and II-VI compound semiconductors, CdTe, ZnTe, CdS, and ZnO, have been determined by performing photoreflectance measurements. The electroreflectance measurements have also been performed on III-V semiconductor alloy Ga_<0.5>In_<0.5>P.3. Chemical treatment effects of silicon surfaces in TMAH (organic alkaline), NaF, NH_4HF_2 solutions, etc. have been studied using spectroscopic ellipsometry, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), and contact-angle measurements. GaN and InN films have also been deposited on silicon substrates by reactive rf-magnetron sputtering. Properties of these III-V nitride films have been investigated using X-ray diffraction, spectroscopic ellipsometry, and atomic force microscopy.

1.在孪晶材料：ZnIn_2Te_4，ZNGA_2Te_4和Cd Ga_2Te_4上获得了如下结果：(1)成功地生长了块状孪晶GS晶体：(2)成功地获得了块状孪晶GS材料，尽管它们含有晶体成分作为包裹物。(3)通过化学机械抛光可以制备光学级别的块体非晶和晶体样品。通过能带结构计算和与实验数据的比较，研究了ZnIn_2Te_4的光学和介电性质。(5)成功地测量了孪晶GS的光致发光光谱。通过光反射测量，确定了III-V化合物半导体、GaP和II-VI化合物半导体的临界点参数与温度的关系。还测量了III-V半导体合金Ga0.5&gt；In0.5&gt；p.3的电学反射。用椭圆偏振光谱、原子力显微镜、X射线光电子能谱(XPS)和接触角测量等方法研究了硅表面在TMAH(有机碱)、NaF、NH4HH2等溶液中的化学处理效应。用反应射频磁控溅射方法在硅衬底上沉积了GaN和InN薄膜。用X射线衍射、椭圆偏振光谱和原子力显微镜研究了这些III-V氮化物膜的性质。