Photoreflectance Study of InGaAs/GaAs Single Quantum Wells

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In order to gain more information about the band offset in the strained layer InxGa1-xAs/GaAs system we propose a detailed systematic study of the photoreflectance spectra from a series of well characterized single quantum well structures with different physical parameters, i.e., well width, strain and In composition (x). In single quantum wells additional information about band offsets can be obtained since light-hole transitions will only be observed when the conduction band offset, Qc~0.5. This is a collaborative effort between Brooklyn College and ETDL, Ft. Monmouth. Photoreflectance measurements will be carried out at Brooklyn College. The heterostructures will be fabricated by molecular beam epitaxy at ETDL, Ft. Monmouth. In addition certain characterization procedures such as high- resolution transmission electron microscopy (TEM) to determine well width and Raman scattering to evaluate x and e will be carried out at Ft. Monmouth. To date there has been little systematic work on well characterized samples of this system.