权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Band Engineering on Alloy of Fluorides for Heterodevices

异质器件氟化物合金能带工程

基本信息

批准号：
12650304
负责人：
TSUTSUI Kazuo
金额：
$ 2.24万
依托单位：
TOKYO INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

项目摘要

The purpose of this research was the artificial control of energy level of conduction band on fluoride alloys of composed of CaF_2 and CdF_2 which were epitaxially grown on Si substrates, and demonstrate feasibility of the technique to be applied for quantum effect hetero devices.First, the CaF_2 buffer layer which was expected to be necessary to obtain good Ca_xCd_<1-x>F_2 alloy on Si was investigated. It was found that the CaF_2 buffer layer was able to be thin down to two mono-layers keeping good crystallinity and morphology of overgrown Ca_xCd_<1-x>F_2 layers. The minimum thickness was fond to fit applications of various tunnel devices since electrons can tunnel the layers.The internal photon emission(IPE) analysis was carried out on the Au/Ca_xCd_<1-x>F_2/Si(111) diode structures, where photo emission current depending on wave length ofexiting light. As a result, it was shown that energy level of conduction bad edge of Ca_xCd_<1-x>F_2 was lineally changed depending on the composit … More ion of Ca_xCd_<1-x>F_2, for the first time. It was also confimied that the energy barrier of conduction bad edge of CaF2 for that of Si was 2.3 eV through the IPE measurement, and that the value was consistent with those obtained by X-ray photoelectron spectroscopy in the previous work From these results, it was indicated that band engineering on the fluoride alloy system, Ca_xCd_<1-x>F_2, was promising.Finally, double barrier resonant tunneling diodes (RTDs) in which the Ca_xCd_<1-x>F_2 was employed in the barrier layers were fabricated, and they were compared to the conventional diodes in which pure CaF2 was employed in the barrier layers. The RTDs using Ca_xCd_<1-x>F_2 barrier exhibited good negative differential current-voltage characteristics. Furthermore, higher current density in spite of thicker barrier kyer on the RTD using Ca_xCd_<1-x>F_2 barrier than those using pure CaF2 was observed, which indicated controllability of barrier height on the RTDs by composition of the fluoride alloy system. Less

本研究的目的是对Si衬底上外延生长的由CaF_2和CdF_2组成的氟化物合金的导带能级进行人工控制，并论证该技术应用于量子效应异质结器件的可行性<1-x>。结果表明，CaF_2缓冲层可以减薄为两层单层，同时保持了Ca_xCd_ F_2层的良好结晶性和形貌<1-x>。对Au/Ca_xCd_ F_2/Si（111）结构进行了内光子发射（IPE）分析<1-x>，发现光发射电流与出射光波长有关。结果表明，Ca_xCd_ F_2的导电坏边能级<1-x>随电导率线性变化 ...更多信息 Ca_xCd_ F_2离子<1-x>。通过IPE测量，确定了CaF_2对Si的导边势垒为2.3eV，这一结果与X射线光电子能谱（XPS）的测量结果相一致。这些结果表明，在氟化物合金体系Ca_xCd_ F_2上进行能带工程<1-x>是很有前途的。最后，制备了以Ca_xCd_F_2为势垒层的双势垒共振隧穿二极管（RTD）<1-x>。并将它们与在阻挡层中采用纯CaF 2的常规二极管进行比较。采用Ca_xCd_<1-x>F_2阻挡层的RTD具有良好的负微分电流-电压特性。此外，尽管使用Ca_xCd_ F_2阻挡层的RTD上的势垒层较厚，但<1-x>仍观察到比使用纯CaF_2的RTD更高的电流密度，这表明氟化物合金体系的组成对RTD上的势垒高度具有可控性。少