Band Engineering on Alloy of Fluorides for Heterodevices
异质器件氟化物合金能带工程
基本信息
- 批准号:12650304
- 负责人:
- 金额:$ 2.24万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2000
- 资助国家:日本
- 起止时间:2000 至 2001
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The purpose of this research was the artificial control of energy level of conduction band on fluoride alloys of composed of CaF_2 and CdF_2 which were epitaxially grown on Si substrates, and demonstrate feasibility of the technique to be applied for quantum effect hetero devices.First, the CaF_2 buffer layer which was expected to be necessary to obtain good Ca_xCd_<1-x>F_2 alloy on Si was investigated. It was found that the CaF_2 buffer layer was able to be thin down to two mono-layers keeping good crystallinity and morphology of overgrown Ca_xCd_<1-x>F_2 layers. The minimum thickness was fond to fit applications of various tunnel devices since electrons can tunnel the layers.The internal photon emission(IPE) analysis was carried out on the Au/Ca_xCd_<1-x>F_2/Si(111) diode structures, where photo emission current depending on wave length ofexiting light. As a result, it was shown that energy level of conduction bad edge of Ca_xCd_<1-x>F_2 was lineally changed depending on the composit … More ion of Ca_xCd_<1-x>F_2, for the first time. It was also confimied that the energy barrier of conduction bad edge of CaF2 for that of Si was 2.3 eV through the IPE measurement, and that the value was consistent with those obtained by X-ray photoelectron spectroscopy in the previous work From these results, it was indicated that band engineering on the fluoride alloy system, Ca_xCd_<1-x>F_2, was promising.Finally, double barrier resonant tunneling diodes (RTDs) in which the Ca_xCd_<1-x>F_2 was employed in the barrier layers were fabricated, and they were compared to the conventional diodes in which pure CaF2 was employed in the barrier layers. The RTDs using Ca_xCd_<1-x>F_2 barrier exhibited good negative differential current-voltage characteristics. Furthermore, higher current density in spite of thicker barrier kyer on the RTD using Ca_xCd_<1-x>F_2 barrier than those using pure CaF2 was observed, which indicated controllability of barrier height on the RTDs by composition of the fluoride alloy system. Less
本研究的目的是对Si衬底上外延生长的由CaF_2和CdF_2组成的氟化物合金的导带能级进行人工控制,并论证该技术应用于量子效应异质结器件的可行性<1-x>。结果表明,CaF_2缓冲层可以减薄为两层单层,同时保持了Ca_xCd_ F_2层的良好结晶性和形貌<1-x>。对Au/Ca_xCd_ F_2/Si(111)结构进行了内光子发射(IPE)分析<1-x>,发现光发射电流与出射光波长有关。结果表明,Ca_xCd_ F_2的导电坏边能级<1-x>随电导率线性变化 ...更多信息 Ca_xCd_ F_2离子<1-x>。通过IPE测量,确定了CaF_2对Si的导边势垒为2.3eV,这一结果与X射线光电子能谱(XPS)的测量结果相一致。这些结果表明,在氟化物合金体系Ca_xCd_ F_2上进行能带工程<1-x>是很有前途的。最后,制备了以Ca_xCd_F_2为势垒层的双势垒共振隧穿二极管(RTD)<1-x>。并将它们与在阻挡层中采用纯CaF 2的常规二极管进行比较。采用Ca_xCd_<1-x>F_2阻挡层的RTD具有良好的负微分电流-电压特性。此外,尽管使用Ca_xCd_ F_2阻挡层的RTD上的势垒层较厚,但<1-x>仍观察到比使用纯CaF_2的RTD更高的电流密度,这表明氟化物合金体系的组成对RTD上的势垒高度具有可控性。少
项目成果
期刊论文数量(15)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Growth Characteristics of Ca_xCd_<1-x>F_2 Films on Si Substrates Using CaF_2 Buffer Layer
CaF_2缓冲层在Si衬底上Ca_xCd_<1-x>F_2薄膜的生长特性
- DOI:
- 发表时间:2002
- 期刊:
- 影响因子:0
- 作者:H.Kanibayashi;T.Gotoh;H.Maeda;K.Tsutsui
- 通讯作者:K.Tsutsui
T.Gotoh,H.Kambayashi and K.Tsutsui: "Epitaxial Growth of Ca_xCd_<1-x>F_2 Mixed Crystal Films on Si Substrates"Jpn.J.Appl.Phys.. 39(5B). L476-L478 (2000)
T.Gotoh、H.Kambayashi 和 K.Tsutsui:“Ca_xCd_<1-x>F_2 混合晶体薄膜在 Si 衬底上的外延生长”Jpn.J.Appl.Phys.. 39(5B)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Si基板上の活性層埋め込み型弗化物共鳴トンネルダイオードの製作
Si衬底上有源层嵌入氟化物谐振隧道二极管的制作
- DOI:
- 发表时间:2002
- 期刊:
- 影响因子:0
- 作者:渡邊聡;神林宏;関根広志;筒井一生
- 通讯作者:筒井一生
Cd-rich Ca_xCd_<1-x>F_2混晶のSi(111)基板上へのエピタキシャル成長
Si(111)衬底上富Cd Ca_xCd_<1-x>F_2混晶的外延生长
- DOI:
- 发表时间:2002
- 期刊:
- 影响因子:0
- 作者:前田元輝;神林宏;筒井一生
- 通讯作者:筒井一生
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TSUTSUI Kazuo其他文献
TSUTSUI Kazuo的其他文献
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{{ truncateString('TSUTSUI Kazuo', 18)}}的其他基金
Fabrication of fluoride resonant tunneling devices on Si with stable electrical properties by using surface inactive layers
利用表面惰性层在硅上制备具有稳定电性能的氟化物谐振隧道器件
- 批准号:
20360004 - 财政年份:2008
- 资助金额:
$ 2.24万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Integrated Gountum Devices using Fluoride Heterostructures
使用氟化物异质结构的集成 Gountum 器件
- 批准号:
10450133 - 财政年份:1998
- 资助金额:
$ 2.24万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
"Interface Controlled Heteroepitaxy of Ionic Crystals and Covalent Crystals Using Ionicity Control Layr"
“使用离子度控制层的离子晶体和共价晶体的界面控制异质外延”
- 批准号:
05650025 - 财政年份:1993
- 资助金额:
$ 2.24万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)