Fabrication of fluoride resonant tunneling devices on Si with stable electrical properties by using surface inactive layers

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For the resonant tunneling devices composed of ultra-thin fluoride multi layers fabricated on Si substrate, the strong chemical reactivity between Si and CdF_2 has been a significant problem. In this work, the inactive crystalline layers of germanium (Ge) or metal silcides were introduced at the interface between the fluoride layer and Si. This technique allowed the fluoride layers to be grown at higher temperature, which is a promising improvement for achieving device operation with good stability.