Estimation of overgrown semiconductor interfaces with buried fine metal patterns by using resonant properties of electron wave

在具有超晶格结构的量子效应器件中，异质结中的导带偏移量对其特性有很大影响。提出了一种利用共振隧穿二极管估算导带偏移量(ΔEC)的方法。如果三重势垒(TB)RTD处于非共振状态，则跨过势垒的热电子发射成为电流的主要成分，这受ΔEC的限制。根据热电子发射理论，可以通过测量200K以上电流-电压特性的温度依赖关系来估算Δ的EC。将该方法应用于GaAsP/GaAsTBRTD，得到Δ的EC值约为200meV。这种方法适用于势垒层有应变的情况。量子能级(Γ)的展宽是改进量子效应器件的关键参数之一。我们提出了一种利用双势垒(DB)RTD独立评价均匀展宽(Γh)和非均匀展宽(ΓI)的方法，其中将DBRTD的透过率视为洛伦兹和高斯的卷积。将该方法应用于GaAsP/GaAsDBRTD，在G=8.4时，Γh和Γi分别为3.3mev和7.4mev。门依赖关系表明，数据来源于包括量子点和量子化接触区的耦合量子系统。

In quantum effect devices with superlattice structure, conduction band offset in heterojunction greatly affects the characteristics. We propose a method for evaluating the conduction band offset (ΔEc) by using resonant tunneling diodes (RTD). If the triple-barrier (TB) RTDs are off-resonance condition, thermionic emission over the barriers becomes a main component for a current, which is restricted by ΔEc. The ΔEc can be estimated by measuring temperature dependence above 200K of the current-voltage characteristics, based on thermionic emission theory. The method was applied for a GaAsP/GaAs TBRTD and the Δec was estimated as about 200 meV. This method is applicable for a case that the barrier layer has strain.A broadening of the quantum energy level (Γ) is one of a key parameter for improving quantum effect devices. We proposed a method for evaluating a homogeneous broadening (Γh) and inhomogeneous broadening (Γi) independently by using double-barrier (DB) RTD, where we regard the transmittance of DBRTD as the convolution of a Lorentzian and a Gaussian. The method was applied for GaAsP/GaAs DBRTDs, and the Γh, Γi were independently estimated as 3.3[meV] and 7.4 [meV] for G=8.4[meV] We fabricated a vertical GaInP/GaAs double barrier structure with a self-aligned buried tungsten gate providing lateral construction. The gate dependence indicates that the data originate from a coupled quantum system including a quantum dot and quantized contact regions.