Estimation of overgrown somiconductor interfaces with buried fine metal patterns by using resonant properties of electron wave

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Recently development of ultra-high speed and/or ultra large scale integration devices proceed rapidly on the basis of nano-technology. As a results, so-called interface rich device where many kinds of interfaces are involved, are required to be realized. In such devices, the device performance is drastically affected by inter face inhomogeneities due to roughness in atomic order thickness, defects, impurities located around interfaces.In this research we focus on investigation of a relation between interface properties and device performances by using tunnel diodes in which semiconductor heterointerfaces play a important role of revealing negative differential resistance. We fabricated trple-barrier resonant tunneling diodes based on GaInP/GaAs heterostructure and the DC and RF characteristics were measured for several types of device structures in order to clarify physical factors affecting on the characteristics.Moreover, we investigated a criterion of observing potential distribution around heterointerfaces by using Kelvin probe force microscopy.