Estimation of overgrown somiconductor interfaces with buried fine metal patterns by using resonant properties of electron wave

利用电子波的谐振特性估计具有埋藏精细金属图案的过度生长的半导体界面

• 批准号: 14550327
• 负责人: SUHARA Michihiko
• 金额: $ 1.92万
• 依托单位: Tokyo Metropolitan University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14550327/
• 关键词: Resonant tunneling diodes; Self-oscilation; Triple barrier; GaInP; GaAs; Kevin force microscopy; 3重障壁共鳴トンネル構造; GaInP; 高周波等価回路パラメタ; 自動振動; スプリアスノイズ; ショットキーコレクタド

Recently development of ultra-high speed and/or ultra large scale integration devices proceed rapidly on the basis of nano-technology. As a results, so-called interface rich device where many kinds of interfaces are involved, are required to be realized. In such devices, the device performance is drastically affected by inter face inhomogeneities due to roughness in atomic order thickness, defects, impurities located around interfaces.In this research we focus on investigation of a relation between interface properties and device performances by using tunnel diodes in which semiconductor heterointerfaces play a important role of revealing negative differential resistance. We fabricated trple-barrier resonant tunneling diodes based on GaInP/GaAs heterostructure and the DC and RF characteristics were measured for several types of device structures in order to clarify physical factors affecting on the characteristics.Moreover, we investigated a criterion of observing potential distribution around heterointerfaces by using Kelvin probe force microscopy.

近年来，基于纳米技术的超高速和/或超大规模集成器件的发展迅速进行。因此，需要实现涉及多种接口的所谓接口丰富设备。在这类器件中，由于原子级厚度的粗糙度、缺陷、位于界面周围的杂质导致的界面不均匀性对器件性能有很大的影响，在本研究中，我们使用隧道二极管来研究界面特性与器件性能之间的关系，其中半导体异质界面在显示负微分电阻方面起着重要作用。我们制作了基于GaInP/GaAs异质结的三势垒共振隧穿二极管，测量了几种结构的器件的直流和射频特性，以阐明影响器件特性的物理因素，并研究了利用Kelvin探针力显微镜观察异质界面附近电势分布的判据。

项目成果

M.Suhara, M.Shibamiya, T.Okumura: "Criterion of Electron Concentration Profiling in Semiconductors by using Kelvin Probe Force Microscopy"The AIUB Journal of Science and Engineering (AJSE). Vol.1, No.1. 41-43 (2002)

M.Suhara、M.Shibamiya、T.Okumura：“使用开尔文探针力显微镜进行半导体电子浓度分析的标准”AIUB 科学与工程杂志 (AJSE)。

M.Suhara, S.Ooki, L-E.Wernersson, W.Seifert, L.Samuelsson, T.Okumura: "A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes"Inst. Phys. Conf. Ser. IOP. 170. 363-367 (2002)

M.Suhara、S.Ooki、L-E.Wernersson、W.Seifert、L.Samuelsson、T.Okumura：“估计双势垒谐振隧道二极管均匀和非均匀能级展宽的建议”Inst。

N.Asaoka, H.Funato, M.Suhara, T.Okumura: "Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD"Applied Surface Science. Vol.216. 413-418 (2003)

N.Asaoka、H.Funato、M.Suhara、T.Okumura：“通过 MOCVD 生长的 GaInP/GaAs 三重势垒谐振隧道二极管的制造和表征”应用表面科学。

M.Suhara, M.Shibamiya, T.Okumura: "A study for a criterion of electron concentration profiling by scanning Kelvin probe"the international conference on nanometer-scale science and technology (Nano-7). No.THP-090. (2002)

M.Suhara、M.Shibamiya、T.Okumura：“通过扫描开尔文探针进行电子浓度分析的标准的研究”纳米级科学技术国际会议（Nano-7）。

S.Ohki, H.Funato, M.Suhara, L-E.Wernersson, W.Seifert, T.Okumura: "A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonat tunneling diodes"Applied Surface Sciences. 190. 288-293 (2002)

S.Ohki、H.Funato、M.Suhara、L-E.Wernersson、W.Seifert、T.Okumura：“利用三重势垒谐振隧道二极管对半导体异质结构导带偏移的估计方法的研究”应用表面科学。