A study for milimeter-wave oscillation and radiation in integrations of resonant tunneling structures and fine thin-filn antennas

谐振隧道结构与精细薄膜天线集成中的毫米波振荡和辐射研究

基本信息

  • 批准号:
    16360178
  • 负责人:
  • 金额:
    $ 7.68万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2004
  • 资助国家:
    日本
  • 起止时间:
    2004 至 2006
  • 项目状态:
    已结题

项目摘要

1. Studies on triple-barrier resonant tunneling diodes (TBRTDs)1-1) Variable capacitance characteristics on GaInP/GaAs triple-barrier resonant tunneling diodes were investigated.1-2) Shortly collector GaInP/GaAs TBRTDs were fabricated and characterized.1-3) Noise properties and microwave imposed characteristics on GaInP/GaAs TBRTDs were studied.1-4) SPICE model for TBRTDs are proposed by physics based expression of current-voltage characteristics1-5) Fast atom beam etching process were investigated to form semiconductor mesa structures1-6) Structural design of TBRTDs by introducing estimation function2. Study for planar on-chip spiral inductors2-1) Size roduction rule of spiral inductors are investigated focusing on the inductance and the quality factor.3. Studies on self-complimentary antenna3-1) Effect of feeding port structure on radiation properties of log-periodic spiral antennas are studied.3-2) Teraherz radiation properties of bow tie antenna are studied and the equivalent circuit model is evaluated.
1.三垒共振隧穿二极管的研究1-1)研究了GaInP/GaAs三势垒共振隧穿二极管的可变电容特性。1-2)制作并表征了短集电极GaInP/GaAsTBRTD。1-3)研究了GaInP/GaAsTBRTD的噪声特性和微波施加特性。1-4)根据电流-电压特性的物理表达式建立了TBRTD的SPICE模型。1-5)研究了快速原子束刻蚀工艺形成半导体台面结构。1-6)通过引入估计函数进行了结构设计。平面片上螺旋电感的研究2-1)研究了螺旋电感的尺寸产生规律,重点研究了电感和品质因素。自补天线研究3)研究了馈电端口结构对对数周期螺旋天线辐射特性的影响。3-2)研究了蝴蝶结天线的太赫兹辐射特性,并对等效电路模型进行了评估。

项目成果

期刊论文数量(28)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
ドライエツチング用アルゴン高速原子ビーム源の残留イオン分析と中性化率評価
干法刻蚀氩快原子束源残留离子分析及中和率评估
Effects of Geometrical Structures on Broadband Characteristics in Finite-Sized On-Chip Self-Complementary Antennas
有限尺寸片上自互补天线几何结构对宽带特性的影响
スプリットリング/ダブルスタブ共振構造を集積した伝送線路の近傍電磁界測定
集成开环/双短截线谐振结构传输线的近场电磁场测量
Analysis of Scaling-Rule and Size-Reduction Limit of Spiral Inductors to Maximize Quality Factor
螺旋电感器品质因数最大化的缩放规则和尺寸减小极限分析
半導体基板上自己補対アンテナの給電構造が広帯域特性に及ぼす影響の理論解析
半导体衬底自互补天线馈电结构对宽带特性影响的理论分析
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SUHARA Michihiko其他文献

SUHARA Michihiko的其他文献

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{{ truncateString('SUHARA Michihiko', 18)}}的其他基金

A implementation of millimeter-wave monolithic isolators by using resonant tunneling devices
使用谐振隧道器件实现毫米波单片隔离器
  • 批准号:
    21560358
  • 财政年份:
    2009
  • 资助金额:
    $ 7.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Estimation of overgrown somiconductor interfaces with buried fine metal patterns by using resonant properties of electron wave
利用电子波的谐振特性估计具有埋藏精细金属图案的过度生长的半导体界面
  • 批准号:
    14550327
  • 财政年份:
    2002
  • 资助金额:
    $ 7.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Estimation of overgrown semiconductor interfaces with buried fine metal patterns by using resonant properties of electron wave
利用电子波的谐振特性估计具有埋入精细金属图案的过度生长的半导体界面
  • 批准号:
    12650347
  • 财政年份:
    2000
  • 资助金额:
    $ 7.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)

相似海外基金

Development of high-speed nonvolatile memory using intersubband transitions in GaN-based resonant tunneling diodes
利用基于 GaN 的谐振隧道二极管的子带间跃迁开发高速非易失性存储器
  • 批准号:
    17K06409
  • 财政年份:
    2017
  • 资助金额:
    $ 7.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Monolithic Integrated Terahertz Transceiver using Resonant Tunneling Diodes
使用谐振隧道二极管的单片集成太赫兹收发器
  • 批准号:
    16K14246
  • 财政年份:
    2016
  • 资助金额:
    $ 7.68万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Resonant tunneling diodes based on non-crystalline oxide semiconductors for micro/millimeter wave electronics
用于微/毫米波电子器件的基于非晶氧化物半导体的谐振隧道二极管
  • 批准号:
    16K14252
  • 财政年份:
    2016
  • 资助金额:
    $ 7.68万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Study for a design method of terahertz transmitters using semiconductor resonant tunneling diodes
半导体谐振隧道二极管太赫兹发射机设计方法研究
  • 批准号:
    16K18095
  • 财政年份:
    2016
  • 资助金额:
    $ 7.68万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
Fabrication of GaN-based resonant tunneling diodes and investigation of their terahertz oscillation
GaN基谐振隧道二极管的制备及其太赫兹振荡的研究
  • 批准号:
    26420332
  • 财政年份:
    2014
  • 资助金额:
    $ 7.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Active Transmission Lines Loaded with Resonant Tunneling Diodes and Their Application to THz Signal Generation and Processing
负载谐振隧道二极管的有源传输线及其在太赫兹信号生成和处理中的应用
  • 批准号:
    20360155
  • 财政年份:
    2008
  • 资助金额:
    $ 7.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Sub-THz sampling AD converters using resonant tunneling diodes
使用谐振隧道二极管的亚太赫兹采样 AD 转换器
  • 批准号:
    18360168
  • 财政年份:
    2006
  • 资助金额:
    $ 7.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Ultrahigh frequency integrated circuits using resonant tunneling diodes
使用谐振隧道二极管的超高频集成电路
  • 批准号:
    15360187
  • 财政年份:
    2003
  • 资助金额:
    $ 7.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Resonant tunneling diodes and transistors in dynamic integrated circuits with high functional density
高功能密度动态集成电路中的谐振隧道二极管和晶体管
  • 批准号:
    5264224
  • 财政年份:
    2000
  • 资助金额:
    $ 7.68万
  • 项目类别:
    Research Grants
Development of High-speed Resonant Tunneling Diodes for Room Temperature Application
室温应用高速谐振隧道二极管的开发
  • 批准号:
    62850067
  • 财政年份:
    1987
  • 资助金额:
    $ 7.68万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research
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