Design and Processing of Environmental Gas Sensors Fabricated by Utilizing Decorative Technique on Pottery and Porcelain
利用陶瓷装饰技术制作环境气体传感器的设计与加工
基本信息
- 批准号:12792014
- 负责人:
- 金额:$ 18.94万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for University and Society Collaboration
- 财政年份:2000
- 资助国家:日本
- 起止时间:2000 至 2002
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Fabrication of high-sensitive semiconductor gas sensors and application to other electronic devices by utilizing a slide-off transfer printing were attempted as below.1. Inflammable gas sensors Hetero-stacking of a pure SnO_2 layer over a Pt-loaded SnO_2 layer (SnO_2/Pt-SnO_2 sensor) led to the highest increase in H_2 sensitivity, whereas H_2 sensitivity of a Pt-SnO_2/SnO_2 sensor was much lower than that of the pure SnO_2 sensor. Stacking of a SnO_2-based layer over a TiO_2 layer also led to an increase in the H_2 sensitivity with a decrease in sensor resistance. On the other hand, NiO-loaded In_2O_3-based sensors showed high sensitivity to benzene and monochlorobenzene. Moreover, an SnO_2 sensor with a porous substrate layer (the porosity : ca. 56.2%) between the SnO_2 layer and a dense alumina substrate showed higher n-C_4H_<10> sensitivity compared with that fabricated directly on a dense alumina substrate.2. NO_x sensor Heterolayer Pt-Al_2O_3/WO_3 and Cr_2O_3-SnO_2 single layer se … More nsor were confirmed to operate as a total NO_x sensor ZnO-WO_3/ZnO sensor showed high NO_2 sensitivity and short response/recovery properties. In addition, introduction of a porous alumina sub-layer between a sensing layer and a dense substrate was effective to improve the NO_2 sensitivity and the response/recovery properties.3. Chemical surface modification of SnO_2 powder with ethoxysilane An SiO_2 thin film induced by the surface modification with diethoxydimethylsilane was found to exist as a grain-boundary phase from TEM observation. The limitation of neck growth between SnO_2 particles by the SiO_2 thin film coating is anticipated to be responsible for increasing the potential barrier height and improving the sensing properties to inflammable gases such as H_2, CH_4 and C_3H_8.4. Microstructure control of BaTiO_3 thick films Composition of a slurry containing BaTiO_3 fine powder prepared hydrothermally, some sintering aids, printing oil and 2-propanol was optimized for being utilized to a spin-coating technique. In consequence, dense and thick BaTiO_3 films (10-20μm) could be fabricated on a silicon substrate after calcination at 1050-1120℃. Less
本论文尝试利用滑离转印技术制作高灵敏度半导体气敏元件,并应用于其他电子元件。纯SnO_2/Pt-SnO_2气敏元件的H_2灵敏度比纯SnO_2气敏元件的H_2灵敏度低得多。在TiO_2层上叠层SnO_2基层也导致了H_2灵敏度的增加,同时传感器电阻降低。而NiO负载的In_2O_3基传感器对苯和一氯苯有很高的灵敏度。此外,还研制了一种具有多孔基底层(孔隙率约为100%)的SnO_2传感器。56.2%),与直接在致密氧化铝衬底上制备的样品相比,具有更高的n-C_4 H_<10>2敏感性.氮氧化物传感器Pt-Al_2 O_3/WO_3和Cr_2O_3-SnO_2单层膜 ...更多信息 ZnO-WO_3/ZnO传感器具有高的NO_2灵敏度和短的响应/恢复特性。此外,在敏感层和致密基底之间引入多孔氧化铝亚层,可以有效地提高传感器对NO_2的敏感性和响应/恢复性能.用二甲基二乙氧基硅烷对SnO_2粉体进行化学表面改性用TEM观察发现,改性后的SiO_2薄膜以晶界相存在。SiO_2薄膜的包覆限制了SnO_2颗粒间的颈部生长,这可能是提高势垒高度,改善对H_2、CH_4和C_3H_8.4等可燃气体敏感性能的原因。BaTiO_3厚膜的微结构控制研究了水热法制备的BaTiO_3微粉、助烧剂、印刷油和异丙醇组成的旋涂浆料。在1050-1120℃下煅烧后,在硅衬底上可以制备出致密、厚约10-20μm的BaTiO_3薄膜。少
项目成果
期刊论文数量(47)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
川原昭彦: "半導体ガスセンサ基板の多孔質化"Chemical Sensors. 16巻 B号. 118-120 (2000)
Akihiko Kawahara:“多孔半导体气体传感器基板的制作”,《化学传感器》,第 16 卷,第 B.118-120 期(2000 年)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
A.Jono: "NO_x sensing properties of Cr_2O_3-SnO_2 sensors fabricated by slide-off transfer printing"Chemical Sensors. Vol.17 No.B. 282-284 (2001)
A.Jono:“通过滑移转移印刷制造的Cr_2O_3-SnO_2传感器的NO_x传感特性”化学传感器。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
A.Kawahara: "NO_x sensing characteristics of ZnO-based heterolayer sensors fabricated by slide-off transfer printing"Chemical Sensors. Vol.17 No.B. 285-287 (2001)
A.Kawahara:“通过滑动转移印刷制造的ZnO基异质层传感器的NO_x传感特性”化学传感器。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
T.Hyodo: "NO_x sensing properties of WO_3-based semiconductor gas sensors fabricated by slide-off transfer printing"Electrochemistry. (in press).
T.Hyodo:“滑动转移印刷制备的WO_3基半导体气体传感器的NO_x传感特性”电化学。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
清水康博: "ミクロ・マクロ構造制御による半導体ガスセンサの高性能化"Chemical Sensors. Vol.18(2). 42-54 (2002)
Yasuhiro Shimizu:“通过微宏观结构控制提高半导体气体传感器的性能”,《化学传感器》第 18 卷(2)。
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- 影响因子:0
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EGASHIRA Makoto其他文献
EGASHIRA Makoto的其他文献
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{{ truncateString('EGASHIRA Makoto', 18)}}的其他基金
Functional Design and Structural Control of Meso-and Macro-porous Ceramics
介孔和大孔陶瓷的功能设计与结构控制
- 批准号:
16360348 - 财政年份:2004
- 资助金额:
$ 18.94万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Design and Processing of Hollow Ceramic Microspheres and Hybrid Ceramic/Polymer Microparticles
空心陶瓷微球和杂化陶瓷/聚合物微粒的设计与加工
- 批准号:
13555175 - 财政年份:2001
- 资助金额:
$ 18.94万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Modification of Ceramic Powders by Utilizing Organic-Inorganic Hybrid Interface
利用有机-无机杂化界面对陶瓷粉末进行改性
- 批准号:
10555219 - 财政年份:1998
- 资助金额:
$ 18.94万 - 项目类别:
Grant-in-Aid for Scientific Research (B).
Functional Design of Semiconductor Gas Sensors for Development of Odor Sensors
用于气味传感器开发的半导体气体传感器的功能设计
- 批准号:
05555231 - 财政年份:1993
- 资助金额:
$ 18.94万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
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16K13637 - 财政年份:2016
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24560065 - 财政年份:2012
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Study of Transient Response of Semiconductor Gas Sensor and Construction of Smell Classification Models
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18560048 - 财政年份:2006
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Development of semiconductor gas sensor ultra-sensitive in ppb level
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15350084 - 财政年份:2003
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$ 18.94万 - 项目类别:
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Design for ultra sensitive oxide semiconductor gas sensor by controlling meso-pore and high order structure
介孔和高阶结构控制超灵敏氧化物半导体气体传感器设计
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13450354 - 财政年份:2001
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