Development of semiconductor gas sensor ultra-sensitive in ppb level

ppb级超灵敏半导体气体传感器的研制

基本信息

  • 批准号:
    15350084
  • 负责人:
  • 金额:
    $ 9.79万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2003
  • 资助国家:
    日本
  • 起止时间:
    2003 至 2004
  • 项目状态:
    已结题

项目摘要

In order to develop gas sensors for very high sensitivity, three key factors have been recognized to control the sensitivity (sensor response) of the sensors of this type, i.e., receptor function, transducer function and utility factor. The importance of the last factor is made obvious when one considers that the target gas (reducing gas) reacts with the oxide surface on its way of diffusion into the sensor device. In this study, we have been investigating new ways of processing for sensing materials from the viewpoint of the above three factors.The thin films derived from the neat sols of SnO_2 appeared to have pores rather small in size. It was then tried to modify the pore structure by dispersing various amounts of poly ethylene glycol (PEG) into the SnO_2 sol prior to spin-coating. It was observed that, under the same spin-coating conditions, the responses of the resulting thin films to H_2 increased with increasing PEG content, in parallel with the increase of pore size, although … More film thickness increased correspondingly in this case. Obviously larger pore sizes are favorable for increasing utility factor.We have tried to grow the size of SnO_2 crystallites in the sols and succeeded in it by adjusting the conditions of hydrothermal treatments. Now the sols of mono-dispersed SnO_2 with a crystallite size up to about 16 nm are available. We have shown that the thin films derived tend to increase sensor response to H_2 rather sharply as the crystallite size increases and the pore size increases accordingly. In addition, more strong dependence on the crystallite size and film thickness was disclosed for the sensor response to H_2S. This gas has larger molecular weight than H_2 and at the same time it is more reactive on the oxide surface as well. These features make this gas more sensitive to microstructure of the films.We have investigated sensor responses of thick films derived from Co_3O_4 (typically 0.5 wt%)-SnO_2 composite powders, which were prepared by mixing the component oxides thoroughly in a planet ball mill. What is of interest here was that the response, especially to CO, increased rather drastically with an increase in ball-milling time. It turned out that the promotion of response was almost in parallel with an increase in pore size. It follows that enlarged pores would make it more favorable for CO molecules to diffuse through the films, leading to the extremely large responses. The sensor responses to various concentrations of CO are compared among several SnO_2 based devices so far reported. The outstandingly large responses of the present film appear to assure the relevance of sensor response with microstructure.We investigated also gas sensors for detecting other gases. Less
为了开发具有非常高灵敏度的气体传感器,已经认识到控制这种类型的传感器的灵敏度(传感器响应)的三个关键因素,即,受体功能、转导功能和效用因子。当考虑到目标气体(还原气体)在其扩散到传感器装置中的途中与氧化物表面反应时,最后一个因素的重要性变得明显。本研究从以上三个因素出发,探索了敏感材料的新的制备方法,由SnO_2纯溶胶制备的薄膜具有相当小的孔径。然后,通过在SnO_2溶胶中分散不同量的聚乙二醇(PEG),对SnO_2溶胶的孔结构进行了改性。在相同的旋涂条件下,随着PEG含量的增加,薄膜对H_2的响应增加,同时薄膜的孔径也增大,但薄膜的H_2响应随PEG含量的增加而增大。 ...更多信息 在这种情况下,膜厚度相应地增加。我们尝试在溶胶中生长SnO_2晶粒,并通过调节水热处理条件,成功地实现了溶胶中SnO_2晶粒的生长。目前,已制备出晶粒尺寸为16 nm左右的单分散SnO_2溶胶。结果表明,随着微晶尺寸的增大和孔径的增大,薄膜对H_2的响应有明显的提高。此外,对H_2S的响应,更强烈的微晶尺寸和膜厚度的依赖性被披露的传感器。这种气体的分子量比H_2大,同时它在氧化物表面上的反应性也更强。我们研究了由Co_3O_4(通常为0.5wt%)-SnO_2复合粉末制成的厚膜的传感器响应。这里感兴趣的是,响应,特别是对CO的响应,随着球磨时间的增加而急剧增加。事实证明,响应的促进几乎与孔径的增加平行。因此,扩大的孔隙将使其更有利于CO分子扩散通过膜,导致极大的响应。比较了目前报道的几种SnO_2基器件对不同浓度CO的响应。本薄膜的显著大的响应似乎确保传感器响应与微结构的相关性。我们还研究了用于检测其他气体的气体传感器。少

项目成果

期刊论文数量(112)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Sensitization of SnO_2-based thick film sensor for ethylene oxide gas
SnO_2基厚膜传感器对环氧乙烷气体的敏化
Wet process-prepared thick films of WO3 for NO2 sensing
  • DOI:
    10.1016/s0925-4005(03)00439-8
  • 发表时间:
    2003-10
  • 期刊:
  • 影响因子:
    8.4
  • 作者:
    Y. Choi;G. Sakai;K. Shimanoe;N. Miura;N. Yamazoe
  • 通讯作者:
    Y. Choi;G. Sakai;K. Shimanoe;N. Miura;N. Yamazoe
Microstructural control of SnO_2 thin films by using polyethylene glycol-mixed sols
聚乙二醇混合溶胶对SnO_2薄膜微观结构的控制
U.-S.Choi, G.Sakai, K.Shimanoe, N.Yamazoe: "Sensing properties of SnO_2-Co_3O_4 composites to CO and H_2"Sensors and Actuators B. 98. 166-173 (2004)
U.-S.Choi、G.Sakai、K.Shimanoe、N.Yamazoe:“SnO_2-Co_3O_4 复合材料对 CO 和 H_2 的传感特性”传感器和执行器 B. 98. 166-173 (2004)
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
A.Ruiz, G.Sakai, A.cornet, K.Shimanoe, J.R.Morante, N.yamazoe: "Microstructure control of thermally stable TiO_2 obtained by hydrothermal process for gas sensors"Proc. of EUROSENSORS XVII. 117-120 (2003)
A.Ruiz、G.Sakai、A.cornet、K.Shimanoe、J.R.Morante、N.yamazoe:“气体传感器水热工艺获得的热稳定 TiO_2 的微观结构控制”Proc。
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    0
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SHIMANOE Kengo其他文献

MgFe2O4におけるLaの導入効果
MgFe2O4中引入La的效果
  • DOI:
  • 发表时间:
    2016
  • 期刊:
  • 影响因子:
    0
  • 作者:
    DOI Akane;NISHIBORI Maiko;SHIMANOE Kengo;OBATA Kenji;MATSUSHIMA Shigenori;平野達也・土居茜・小畑賢次・西堀麻衣子・島ノ江憲剛・松嶋茂憲
  • 通讯作者:
    平野達也・土居茜・小畑賢次・西堀麻衣子・島ノ江憲剛・松嶋茂憲
Effect of adding an additional element for microstructure of magnesium ferrite
添加添加元素对铁氧体镁显微组织的影响
  • DOI:
  • 发表时间:
    2016
  • 期刊:
  • 影响因子:
    0
  • 作者:
    DOI Akane;NISHIBORI Maiko;SHIMANOE Kengo;OBATA Kenji;MATSUSHIMA Shigenori
  • 通讯作者:
    MATSUSHIMA Shigenori

SHIMANOE Kengo的其他文献

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{{ truncateString('SHIMANOE Kengo', 18)}}的其他基金

New material design toward development of micro sensors for detection of environment-related gases
新材料设计,用于开发用于检测环境相关气体的微型传感器
  • 批准号:
    22350064
  • 财政年份:
    2010
  • 资助金额:
    $ 9.79万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Semiconductor gas sensors based on hetero-cluster particles for VOC detection in ppb level
基于异质团簇粒子的半导体气体传感器,用于 ppb 级 VOC 检测
  • 批准号:
    18350075
  • 财政年份:
    2006
  • 资助金额:
    $ 9.79万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Design of Planar Type CO2 Sensor for Indoor Enviroment Measurement
室内环境测量平面型CO2传感器的设计
  • 批准号:
    13555238
  • 财政年份:
    2001
  • 资助金额:
    $ 9.79万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Field Effect Transistor Type Gas Sensor Coated with NaNO_2-based Auxiliary Phase for NO_2 Detection
用于NO_2检测的涂有NaNO_2基辅助相的场效应晶体管型气体传感器
  • 批准号:
    12650814
  • 财政年份:
    2000
  • 资助金额:
    $ 9.79万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)

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用于结构控制功能有机聚合物材料取向评估的微小面积 XAFS 开发
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