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Study for low-temperature formation of high-quality STNO high-k films for non-volatile memories

非易失性存储器用高质量STNO高k薄膜的低温成膜研究

基本信息

批准号：
12838001
负责人：
HIRAYAMA Masaki
金额：
$ 2.24万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12838001/
关键词：
high-k film STNO non volatile memory silicon nitride direct nitridation direct oxidation microwave plasma radial line slot antenna 強誘電体ゲート絶縁膜 LSI 有機金属ガスバリア膜酸素ラジカルパリア膜

项目摘要

The purpose of this research project is to develop film formation process technologies for high-quality high-k films (Sr_2(Ta_<1-x>, Nb_x)_2O_7 : STNO) with excellent uniformity within ±2 % over large diameter wafers at very low-temperatures below 500 ℃ by utilizing a microwave excited high-density plasma with a radial line slot antenna.By using the conventional high-k film formation methods such as sol-gel, PE-CVD (plasma enhanced chemical vapor deposition), CVD, and sputtering, it is difficult to form uniform high-quality gate insulator with high-rate at low-temperatures. In this research project we have developed following novel high-k gate insulator formation technologies. The process sequence is as follows. At first, a high-quality ultra-thin silicon nitride film as a barrier film is formed on a silicon substrate at low temperature of 500 ℃ by utilizing the microwave excited high-density plasma to mitigate the reaction between the high-k film and the silicon substrate. Then a Sr, … More Ta, Nb alloy film are formed on the substrate by using a novel sputtering technology with balanced electron drift magnetron plasma utilizing low-energy ion bombardment. Then, high-k film is formed by direct oxidation in the microwave excited high-density plasma equipment.We have succeeded to form high-quality silicon nitride gate insulator films with excellent barrier ability, very low leakage current (3 order of magnitude lower than the conventional thermally grown gate oxide films), very low 1/f noise (2 order of magnitude lower than the conventional gate oxide films), and excellent strength for current stress (Qbd : 100 C/cm^2) by low-temperature direct-nitridation process with NH^* radicals. Furthermore, we have succeeded to form oxide films with excellent electric properties by directly oxidizing the single-crystal silicon with every surface orientation, poly silicon, and metal involving the Sr, Ta, Nb alloys. These results lead not only to the realization of ultrahigh-speed devices with high-k gate FET but also to the establishment of a number of advanced processing technologies which certainly will become the main stream in microelectronics in sub- 100 nm era, impacting greatly the semiconductor manufacturing technology in future. Less

本研究旨在发展高品质高介电常数薄膜（Sr_2（Ta_<1-x>，Nb_x）_2O_7：利用微波激发的高密度等离子体和径向线缝隙天线，在500 ℃以下的极低温度下在大直径晶片上制备出均匀性在± 2%以内的高介电常数薄膜（STNO）例如，由于等离子体增强化学气相沉积（plasma enhanced chemical vapor deposition）、CVD和溅射，难以在低温下以高速率形成均匀的高质量栅极绝缘体。在这个研究项目中，我们开发了以下新的高k栅绝缘层形成技术。工艺顺序如下。首先，利用微波激发的高密度等离子体，在500 ℃的低温下在硅衬底上形成高质量的超薄氮化硅薄膜作为阻挡膜，以减缓高k薄膜与硅衬底之间的反应。然后是Sr， ...更多信息采用平衡电子漂移磁控等离子体溅射技术，利用低能离子轰击在衬底上形成Ta、Nb合金薄膜。然后在微波激励高密度等离子体装置中采用直接氧化法制备高k薄膜，成功地制备出了高质量的氮化硅栅绝缘膜，具有良好的阻挡能力，极低的漏电流（比传统热生长栅氧化膜低3个数量级），极低1/f噪声（比传统的栅氧化膜低2个数量级），并且通过使用NH^* 自由基的低温直接氮化工艺具有优异的电流应力强度（Qbd：100 C/cm ^2）。此外，通过直接氧化具有每个表面取向的单晶硅、多晶硅和涉及Sr、Ta、Nb合金的金属，我们成功地形成了具有优异电性能的氧化物膜。这些结果不仅使高k栅场效应晶体管的超高速器件得以实现，而且使一系列先进的工艺技术得以建立，必将成为亚100 nm时代微电子技术的主流，对未来半导体制造技术产生重大影响。少