Research of low-k/high-k dielectric films growth utilizing microwave exited plasma

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The purpose of this research is to establish the deposition technology of high-quality ferroelectric films with high dielectric constant over 280 by high-density microwave plasma. First of all, low-temperature oxidation technology for crystallization of ferroelectric films and high reliable silicon nitridation technology for buffer layer between ferroelectric films and silicon substrate should be established. High-density microwave plasma system, independently developed by us, is characterized by high plasma density above 10ィイD112ィエD1 cmィイD1-13ィエD1, excellent uniformity less than 1% on 300 mm diameter wafer, and low ion bombardment energy less than 7eV. The new plasma system enables damage-free high-quality thin film growth. Utilizing the system, low-temperature (400℃) oxidation technology was successfully established by Kr/OィイD22ィエD2 plasma. Stoichiometric silicon nitride films with almost same interface trap density and bulk charge density as thermally grown silicon oxide films were successfully formed at very-low-temperature (400-500℃). The silicon nitride films also shown very high diffusion resistance for boron and oxygen same as thermally grown nitride films.