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Luminescence and device application of GaN and AgGaS_2 doped with rare-earth impurities

稀土掺杂GaN和AgGaS_2的发光及器件应用

基本信息

批准号：
13650015
负责人：
SHIRAKATA Sho
金额：
$ 2.62万
依托单位：
Ehime University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650015/
关键词：
GaN AgGaS_2 Rane-earth impurity photoluminescence phosphor 蛍光体フォルトミネッセンス

项目摘要

Preparation and photoluminescence measurements have been carried out on the GaN phosphor powder, sputtered GaN thin films and AgGaS_2 single crystals doped with rare-earth (RE) impurities.GaN : RE phosphor powders have been prepared by sintering of the GaN powder mixed with the rare-earth nitride which is either EuN or TbN. As a result, intense green and red emissions are observed for GaN : Tb and GaN : Eu, respectively. It has been concluded that the emissions are due to the emission of trivalent rare-earth impurities which is not purely the substitutional RE ion at the Ga site in the GaN lattice. They may be related to RE oxides or RE-oxygen impurity complex. Eu-doped GaN powder has also been prepared by the nitrization of the Ga_2S_3 doped with Eu. Emission from the substitutional Eu^3+ impurity has been observed for this powder sample. However, the emission intensity is very weak. Zn doping in GaN powder was successfully by the nitrization of the Ga_2S_3 : Zn. Thus, it is concluded … More that the doping of ER impurity into GaN under the thermal equilibrium condition is very difficult. A new method was also performed by the chemical reaction using Ga(NO_3)_3 and Eu(NO_3)_3 as starting materials for the preparation of GaN : Eu.Thin GaN films doped with RE (Eu and Tb) were grown on sapphire substrate by the RF magnetron sputtering. Red emission due to Eu^<3+> (620 nm) was observed for GaN : Eu films. Emissions were studied with relation to the growth conditions (substrate temperature, growth time and doping concentration) and annealing condition (annealing in NH^3). By optimizing these conditions, GaN : Eu films emitting red intense emission have been prepared. However for the GaN : Tb film, no Tb^<3+>-related emission has been observed.AgGaS_2 crystals doped with RE have been prepared by (1) sintering method, (2) melt-growth method and (3) iodine chemical vapor transport method. AgGaS_2 : Eu exhibited intense green emission at 2.3 eV related to the 5d-4f transition in Eu^<2+>. For the AgGaS^2 : Er, series of emission lines has been observed at about 2.3 and 1.9 eV. No infrared emission (1.5 μm) has been observed. Energies and number of the emission peaks are different depending on the preparation method. Since RE impurities are considered to be substitutionally occupy the Ag site, stoichiometry control and charge compensation in AgGaS^2 : ER are future subject. Less

对GaN荧光粉、溅射GaN薄膜和掺杂稀土(RE)的AgGaS_2单晶进行了制备和光致发光测试，并通过烧结制备了GaN：RE荧光粉。结果表明，GaN：Tb和GaN：Eu分别有很强的绿光和红光发射。结果表明，发射是由于三价稀土杂质的发射，而不是纯粹的GaN晶格中Ga位的代位稀土离子。它们可能与稀土氧化物或稀土-氧杂质络合物有关。通过对掺Eu的Ga2S3进行氮化处理，制备了掺Eu的GaN粉末。在该粉末样品中观察到了替代Eu^3+杂质的发射。然而，发射强度很弱。利用Ga2S3：Zn的氮化反应，成功地在GaN粉末中掺入了锌。因此，可以得出结论：…此外，在热平衡条件下将Er杂质掺杂到GaN中是非常困难的。以Ga(NO3)3和Eu(NO3)3为原料，采用射频磁控溅射法在蓝宝石衬底上制备了掺稀土的GaN薄膜。在GaN：Eu薄膜中观察到Eu3+&Gt；(620 Nm)红光发射。研究了生长条件(衬底温度、生长时间和掺杂浓度)和退火条件(氨气中退火)对发光的影响。通过优化这些条件，制备了具有强红光发射的GaN：Eu薄膜。然而，对于GaN：Tb薄膜，没有观察到与Tb^&lt；3+&gt；相关的发射。采用(1)烧结法、(2)熔体生长法和(3)碘化学气相输运法制备了掺稀土的AgGaS_2晶体。AgGaS_2：Eu在2.3 eV处表现出强烈的绿色发射，这与Eu^&lt；2+&gt；的5d-4f跃迁有关。对于AGGAS^2：Er，观测到了约2.3 eV和1.9 eV的一系列发射线。没有观察到红外发射(1.5μm)。发射峰的能量和数目随制备方法的不同而不同。由于稀土杂质被认为占据了Ag位，因此AgAs^2：Er中的化学计量控制和电荷补偿是未来的研究方向。较少