Epitaxial growth, valence control and photodetector application of CulnSe2
Epitaxial growth, valence control and photodetector application of CulnSe2
批准号:
10650012
负责人:
SHIRAKATA Sho
金额:
$2.24万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1998
资助国家:
日本
项目状态:
已结题
起止时间:
1998 至 1999
中文摘要
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英文摘要
In this work, the development of the Metalorganic Molecular Beam Epitaxy (MOMBE) of CuInSeィイD22ィエD2, a promising material for the solar cell, has been carried out for the purpose of the native defect control and valence control of CuInSeィイD22ィエD2 by means of the precise composition control MOMBE growth of CuInSeィイD22ィエD2 has been performed on the GaAs substrate by introducing Cycropentadienyl-copper-triethyl-phosphine (CpCuTEP) and triethyl-indium using leak valves, which is similar to the MOMBE growth of CuGaSeィイD22ィエD2 and CuAISeィイD22ィエD2 performed by the author. Good quality epi-layer of CuInSeィイD22ィエD2 has been grown successfully. The X-ray diffraction, SEM, photoluminescence, photoreflectance and Raman measurements show that the high quality CuInSeィイD22ィエD2 epilayer can be grown by MOMBE. Next, a new organometallic Cu precursor (hfa-Cu-atms) has been examined in addition to the precise flow control by means of the mass flow controller (MFC) for the purpose of the precise-rate supp … More ly of the organometallic precursors. We prepared the new gas-handling system for this purpose. This system is entirely included in the constant temperature box in order to supply hfa-Cu-atms and TEI by preventing the condensation of them. At first, hfa-Cu-atms has been directly handled by MFC without a carrier gas and the growth of Cu film has been examined. However, no Cu-film has been grown, the result indicating the poor supply of hfa-Cu-atms. This may be because of the decomposition of hfa-Cu-atms into the hfa-Cu and the atms solvent with high vapor pressure, and therefore, only atms with high vapor pressure has been supplied. Based on this result, the supply of hfa-Cu-atms has been examined by bubbling of the hfa-Cu-atms with the He carrier gas, which enables the hfa-Cu-atms container under moderate pressure in order not to decompose hfa-Cu-atms. However, no Cu film has been grown on the Si substrate. Study of the gas decomposition process in this gas-handling system has been done using a quadrapole-mass gas-analyzer for the successful gas supply. Less
期刊论文(3)
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科研奖励(0)
会议论文
S. Shirakata, S.Yudate, T. Terasako and S. Isomura: "Metalorganic Molecular Beam Epitaxy of CulnSe2 on GaAs Substrate"Jpn.J.Appl.Phys.. 37. L1033-L1035 (1998)
S. Shirakata、S.Yudate、T. Terasako 和 S. Isomura:“GaAs 衬底上 CuInSe2 的金属有机分子束外延”Jpn.J.Appl.Phys.. 37. L1033-L1035 (1998)
DOI:
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发表时间:
期刊:
影响因子:
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作者:
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通讯作者:
Sho Shirakata: "Mamolorgonic Moleculer Becun Epitargot CuInSe2 on GaAs Substrate"Jpn.J.Appl.Phys. 37. L1033-L1035 (1998)
Sho Shirakata:“Mamolorgonic Moleculer Becun Epitargot CuInSe2 on GaAs Substrate”Jpn.J.Appl.Phys.
DOI:
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发表时间:
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影响因子:
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作者:
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通讯作者:
S.Shirakata: "Metalorganic Moleculan Beam Eptaxy of CuInSe,on Ga bs Substrate"Spn.J.Appl.Plys.. 37. L1033-L1035 (1998)
S.Shirakata:“Ga bs 基底上 CuInSe 的金属有机分子束 Eptaxy”Spn.J.Appl.Plys.. 37. L1033-L1035 (1998)
DOI:
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发表时间:
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影响因子:
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作者:
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通讯作者:
Luminescence and device application of GaN and AgGaS_2 doped with rare-earth impurities
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批准号:13650015
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.62万
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财政年份:2001
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负责人:SHIRAKATA Sho
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依托单位:
Preparation and characterization of I-III-VI_2 chalcopyrite semiconductor superlattice by Metalorganic Molecular Beam Epitaxy.
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批准号:08650017
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.28万
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财政年份:1996
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负责人:SHIRAKATA Sho
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依托单位:
海外基金