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Epitaxial growth, valence control and photodetector application of CulnSe2

CulnSe2 的外延生长、价态控制和光电探测器应用

基本信息

批准号：
10650012
负责人：
SHIRAKATA Sho
金额：
$ 2.24万
依托单位：
Ehime University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

项目摘要

In this work, the development of the Metalorganic Molecular Beam Epitaxy (MOMBE) of CuInSeィイD22ィエD2, a promising material for the solar cell, has been carried out for the purpose of the native defect control and valence control of CuInSeィイD22ィエD2 by means of the precise composition control MOMBE growth of CuInSeィイD22ィエD2 has been performed on the GaAs substrate by introducing Cycropentadienyl-copper-triethyl-phosphine (CpCuTEP) and triethyl-indium using leak valves, which is similar to the MOMBE growth of CuGaSeィイD22ィエD2 and CuAISeィイD22ィエD2 performed by the author. Good quality epi-layer of CuInSeィイD22ィエD2 has been grown successfully. The X-ray diffraction, SEM, photoluminescence, photoreflectance and Raman measurements show that the high quality CuInSeィイD22ィエD2 epilayer can be grown by MOMBE. Next, a new organometallic Cu precursor (hfa-Cu-atms) has been examined in addition to the precise flow control by means of the mass flow controller (MFC) for the purpose of the precise-rate supp … More ly of the organometallic precursors. We prepared the new gas-handling system for this purpose. This system is entirely included in the constant temperature box in order to supply hfa-Cu-atms and TEI by preventing the condensation of them. At first, hfa-Cu-atms has been directly handled by MFC without a carrier gas and the growth of Cu film has been examined. However, no Cu-film has been grown, the result indicating the poor supply of hfa-Cu-atms. This may be because of the decomposition of hfa-Cu-atms into the hfa-Cu and the atms solvent with high vapor pressure, and therefore, only atms with high vapor pressure has been supplied. Based on this result, the supply of hfa-Cu-atms has been examined by bubbling of the hfa-Cu-atms with the He carrier gas, which enables the hfa-Cu-atms container under moderate pressure in order not to decompose hfa-Cu-atms. However, no Cu film has been grown on the Si substrate. Study of the gas decomposition process in this gas-handling system has been done using a quadrapole-mass gas-analyzer for the successful gas supply. Less

在这项工作中，我们开发了CuInSeiiD22ィエD2的金属有机分子束外延（MOMBE），这是一种有前景的太阳能电池材料，目的是通过精确成分控制MOMBE生长来控制CuInSeiiD22ィエD2的原生缺陷和价态控制。 CuInSeィイD22ィエD2已在GaAs衬底上进行通过使用泄漏阀引入环戊二烯基铜三乙基膦（CpCuTEP）和三乙基铟，这与作者进行的CuGaSeiiD22ィエD2和CuAISeiiD22ィエD2的MOMBE生长类似。已成功生长出高质量的CuInSeiiD22ィエD2外延层。 X射线衍射、SEM、光致发光、光反射和拉曼测量表明MOMBE可以生长高质量的CuInSeiiD22iiD2外延层。接下来，除了通过质量流量控制器（MFC）进行精确流量控制之外，还对一种新的有机金属铜前驱体（hfa-Cu-atms）进行了检查，以实现有机金属前驱体的精确速率供应。我们为此准备了新的气体处理系统。该系统完全包含在恒温箱中，以便通过防止 hfa-Cu-atms 和 TEI 冷凝来供应它们。首先，在没有载气的情况下，通过MFC直接处理hfa-Cu-atms，并检查了Cu膜的生长。然而，没有生长出铜膜，这表明hfa-Cu-atms的供应不足。这可能是因为hfa-Cu-atms分解成hfa-Cu和高蒸气压的atms溶剂，因此仅供应高蒸气压的atms。基于该结果，通过用He载气对hfa-Cu-atms鼓泡来检查hfa-Cu-atms的供应，这使得hfa-Cu-atms容器处于中等压力下，从而不分解hfa-Cu-atms。然而，在Si衬底上还没有生长Cu膜。使用四极质量气体分析仪对该气体处理系统中的气体分解过程进行了研究，以实现成功的气体供应。较少的