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Development of Fabrication Technique of Crystals for Advanced Optical Computing

Development of Fabrication Technique of Crystals for Advanced Optical Computing
先进光学计算晶体制造技术的发展
批准号:
13650350
负责人:
YOKOTANI Atsushi
金额:
$1.98万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2002

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中文摘要
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英文摘要
Crystalline barium titanate thin films which are very important materials for optical computing have been fabricated by the pulsed laser deposition (PLD) method. From the results which were obtained in 2001, it was found that the substrate temperature above 665 C^o was necessary to obtain crystalline films, as long as the conventional PLD was adopted. Therefore, in the experiments performed in 2003, we tried to reduce this temperature by irradiating the surface of the substrate with ultraviolet laser relatively weak intensity.The KrF excimer laser for the target irradiation was partially divided by a beam splitter and irradiated the substrate at a fluence from 25 to 100 mJ/cm^3. The obtained films are characterized with the X-ray diffractometer and the scanning electron microscope (SEM).The temperature at which the crystallization started was successfully reduced to 600^oC and 250^oC for the intensities of 25 mJ/cm^2, respectively. The SEM observation revealed that the obtained films had some weak periodical structures which were influenced by the orientation of the substrate.In summary, through this research, we could reduce the temperature of crystallization by irradiating the substrate with weak ultraviolet laser compared to the conventional method.
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Tomomi Ito: "Fabrication of Lanthum Fluoride Thin Films By the Pulsed Laser Deposition Method"Memoirs, Faculty of Eng., Miyazaki Univ.. 31. 87-92 (2002)
伊藤智美:“用脉冲激光沉积法制备氟化镧薄膜”回忆录,宫崎大学工程系,31. 87-92 (2002)
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伊藤 智海: "PLD法によるフッ化ランタン薄膜の作製"宮崎大学工学部紀要. 31. 87-92 (2002)
Tomomi Ito:“PLD法制备氟化镧薄膜”宫崎大学工学部通报31. 87-92(2002)。
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19
    Development of insulator film for penetrating electrodes of layered system LSIs for the next generation
    • 批准号:
      17560288
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.37万
    • 财政年份:
      2005
    • 负责人:
      YOKOTANI Atsushi
    • 依托单位:
    Improving of Crystal Quality of Optical Computing Devices
    • 批准号:
      11650328
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.11万
    • 财政年份:
      1999
    • 负责人:
      YOKOTANI Atsushi
    • 依托单位:
    Growth of high quality barium titanate crystals for neuro-computers
    • 批准号:
      07650380
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $1.34万
    • 财政年份:
      1995
    • 负责人:
      YOKOTANI Atsushi
    • 依托单位: