Development of Fabrication Technique of Crystals for Advanced Optical Computing

先进光学计算晶体制造技术的发展

基本信息

  • 批准号:
    13650350
  • 负责人:
  • 金额:
    $ 1.98万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    2001
  • 资助国家:
    日本
  • 起止时间:
    2001 至 2002
  • 项目状态:
    已结题

项目摘要

Crystalline barium titanate thin films which are very important materials for optical computing have been fabricated by the pulsed laser deposition (PLD) method. From the results which were obtained in 2001, it was found that the substrate temperature above 665 C^o was necessary to obtain crystalline films, as long as the conventional PLD was adopted. Therefore, in the experiments performed in 2003, we tried to reduce this temperature by irradiating the surface of the substrate with ultraviolet laser relatively weak intensity.The KrF excimer laser for the target irradiation was partially divided by a beam splitter and irradiated the substrate at a fluence from 25 to 100 mJ/cm^3. The obtained films are characterized with the X-ray diffractometer and the scanning electron microscope (SEM).The temperature at which the crystallization started was successfully reduced to 600^oC and 250^oC for the intensities of 25 mJ/cm^2, respectively. The SEM observation revealed that the obtained films had some weak periodical structures which were influenced by the orientation of the substrate.In summary, through this research, we could reduce the temperature of crystallization by irradiating the substrate with weak ultraviolet laser compared to the conventional method.
用脉冲激光沉积(PLD)方法制备了钛酸钡晶体薄膜,它是光学计算的重要材料。从2001年获得的结果发现,只要采用常规PLD,则高于665 ° C的衬底温度对于获得结晶膜是必要的。因此,在2003年进行的实验中,我们试图通过用相对较弱强度的紫外激光照射衬底表面来降低该温度。用于靶照射的KrF准分子激光被分束器部分分割,并以25至100 mJ/cm ^3的能量密度照射衬底。用X射线衍射仪和扫描电子显微镜(SEM)对薄膜进行了表征,在25 mJ/cm ^2的强度下,晶化开始温度分别降低到600 ℃和250 ℃。通过SEM观察发现,薄膜具有弱周期性结构,这种周期性结构受衬底取向的影响,通过本研究,与传统方法相比,弱紫外激光照射衬底可以降低薄膜的晶化温度。

项目成果

期刊论文数量(21)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Tomomi Ito: "Fabrication of Lanthum Fluoride Thin Films By the Pulsed Laser Deposition Method"Memoirs, Faculty of Eng., Miyazaki Univ.. 31. 87-92 (2002)
伊藤智美:“用脉冲激光沉积法制备氟化镧薄膜”回忆录,宫崎大学工程系,31. 87-92 (2002)
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Akihiro Kameyama: "Generation and erasure of second-order optical nonlinearities in thermally poled silica glasses by control of point defects"J. of Opt. Soc. Am.. B19(10). 2376-2383 (2002)
Akihiro Kameyama:“通过控制点缺陷在热极化石英玻璃中产生和消除二阶光学非线性”J。
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    0
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伊藤 智海: "PLD法によるフッ化ランタン薄膜の作製"宮崎大学工学部紀要. 31. 87-92 (2002)
Tomomi Ito:“PLD法制备氟化镧薄膜”宫崎大学工学部通报31. 87-92(2002)。
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    0
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Atsushi Yokotani: "Development of Dicing Technique for Thin Semiconductor Substrate by Using a Femtosecond Laser"IEEJ Trans. EIS. 123-C(2). 216-221 (2003)
Atsushi Yokotani:“利用飞秒激光开发薄半导体基板切割技术”IEEJ Trans。
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    0
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沢田博司: "フェムト秒レーザーアブレーションにおけるレーザー発振条件の加工特性に及ぼす影響"精密工学会誌. 69(1). 84-88 (2003)
Hiroshi Sawada:“激光振荡条件对飞秒激光烧蚀加工特性的影响”,日本精密工程学会杂志 69(1) (2003)。
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YOKOTANI Atsushi其他文献

YOKOTANI Atsushi的其他文献

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{{ truncateString('YOKOTANI Atsushi', 18)}}的其他基金

Development of insulator film for penetrating electrodes of layered system LSIs for the next generation
开发下一代层叠系统LSI的穿透电极用绝缘膜
  • 批准号:
    17560288
  • 财政年份:
    2005
  • 资助金额:
    $ 1.98万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Improving of Crystal Quality of Optical Computing Devices
光计算器件晶体质量的提高
  • 批准号:
    11650328
  • 财政年份:
    1999
  • 资助金额:
    $ 1.98万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Growth of high quality barium titanate crystals for neuro-computers
用于神经计算机的高质量钛酸钡晶体的生长
  • 批准号:
    07650380
  • 财政年份:
    1995
  • 资助金额:
    $ 1.98万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
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