Mesoscopic studies on photo- induced magnetic effects in magnetic semiconductors
Mesoscopic studies on photo- induced magnetic effects in magnetic semiconductors
批准号:
13650736
负责人:
HASEGAWA Tetsuya
金额:
$2.24万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2002
中文摘要
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英文摘要
Diluted magnetic semiconductors (DMS) are key materials for spin electronics. However, their magnetic structures in a microscopic sense, which are important for applications, have been scarcely studied, so far. Here, we performed direct observations of magnetic domain structures in (Ga. Mn) As thin films, which is a typical DMS based on III-V semiconductors, with a thickness of t=1.0 and 0.2μm, by using a scanning SQUID microscope (SSM). For the t=0.2μm film, furthermore, we investigated the photo-irradiation effects on magnetic properties.(Ga. Mn) As thin films with in-plane magnetization were grown by the MBE technique at 25C. The Mn contents were 4.7% and 5.3% for t=1.0μm and t=0.2μm, films, respectively. SSM measurements were done at low temperatures ranging from 3K to 100K. The instrument senses the magnetic field perpendicular to the sample surface, Bz.From the SSM observations, we found anomalous circular domains for the t= 1.0μm film. The leakage field generated from the domain … More boundaries is weaker than the expectation, implying that multiple domains exist along the perpendicular direction. For the t=0.2μm film. In contrast, we observed ordinary stripe-shaped domains. The leakage field reached to 300μT, which is close to the calculated value. This tells us that the t=0.2μm film is composed of a single domain perpendicular to the film surface.Next, we have examined photo-induced effects on the t=0.2μm film. As a result, it was found that the Bz value under irradiation is approximately 1.2 times larger than the that before irradiation. The enhanced filed returned to the original one. But the reaction is substantially slow. At 3K, indeed, it took about 50min to reach to maximum. The reaction rate is decreased with increasing temperature. In addition, we confirmed that the rate is proportional to the intensity of light. In the present experiment, we observed, at the first time, that magnetism of (Ga, Mn) As can be enhanced by a relatively weak laser beam of 0.02mW/cm2. Less
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福村知昭, 長谷川哲也: "走査型プローブ顕微鏡の磁性半導体及び超巨大磁気抵抗材料への適用"表面科学. 23. 233-238 (2002)
Tomoaki Fukumura、Tetsuya Hasekawa:“扫描探针显微镜在磁性半导体和超巨磁阻材料中的应用”《表面科学》23. 233-238 (2002)。
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長谷川哲也: "走査SQUID顕微鏡の強磁性材料研究への応用"まてりあ. 41. 864-865 (2002)
Tetsuya Hasekawa:“扫描 SQUID 显微镜在铁磁材料研究中的应用”Materia。41. 864-865 (2002)
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T.Fukumura, T.Shono, K.Inaba, T.Hasegawa, H.Koinuma, F.Matsuura, H.Ohono: "magnetic Domain Structure of a Ferromagnetic Semiconductor (Ga, Mn)As Observed with Scanning Prove Microscopes"Physica E. 10. 135-138 (2001)
T.Fukumura、T.Shono、K.Inaba、T.Hasekawa、H.Koinuma、F.Matsuura、H.Ohono:“用扫描证明显微镜观察到的铁磁半导体(Ga、Mn)的磁畴结构”Physica E
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T.Fukumura, T.Shono, K.Inaba, T.Hasegawa, H.Koinuma, F.Matsuura, H.Ohono: "Magnetic Domain Structure of a Ferromagnetic Semiconductor (Ga,Mn)As Observed with Scanning Probe Microscopes"Physica E. 10. 135-138 (2001)
T.Fukumura、T.Shono、K.Inaba、T.Hasekawa、H.Koinuma、F.Matsuura、H.Ohono:“用扫描探针显微镜观察到的铁磁半导体 (Ga,Mn) 的磁畴结构”Physica E
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T. Fukumura, T. Shono, K. Inaba, T. Hasegawa, H. Koinuma, F. Matsuura and H. Ohono,: "Magnetic Domain Structure of a Ferromagnetic Semiconductor (Ga, Mn) As Observed with Scanning Probe Microscopes"Physica E. 10. 135-138 (2001)
T. Fukumura、T. Shono、K. Inaba、T. Hasekawa、H. Koinuma、F. Matsuura 和 H. Ohono,:“用扫描探针显微镜观察到的铁磁半导体(Ga、Mn)的磁畴结构”Physica
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Confirmation of anomalous superconductivity in subnano-scale particles
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批准号:24654099
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.33万
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财政年份:2012
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负责人:HASEGAWA Tetsuya
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依托单位:
Educational approach in the workshop at Bauhaus and its success in the education for creativity
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批准号:21530799
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.33万
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财政年份:2009
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负责人:HASEGAWA Tetsuya
-
依托单位:
Nanoscale reactions assisted by electron tunneling
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批准号:16310069
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.62万
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财政年份:2004
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负责人:HASEGAWA Tetsuya
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依托单位:
Studies on inhomogeneous electronic structures in high J_c ceramics superconductors
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批准号:11650692
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.18万
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财政年份:1999
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负责人:HASEGAWA Tetsuya
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依托单位:
Studies on ultra-dense recording using probe-induced phase transition
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批准号:10555216
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$2.82万
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财政年份:1998
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负责人:HASEGAWA Tetsuya
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依托单位:
国内基金
海外基金
利用磁近邻效应进一步提高(Ga,Mn)As的居里温度
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批准号:11204293
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项目类别:青年科学基金项目
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资助金额:30.0万元
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批准年份:2012
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负责人:陈林
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依托单位:
铁磁性半导体(Ga,Mn)As的临界现象研究
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批准号:11174212
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项目类别:面上项目
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资助金额:75.0万元
-
批准年份:2011
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负责人:向钢
-
依托单位:
离子束外延生长(Ga,Mn)As材料及性质研究
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批准号:60176001
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项目类别:面上项目
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资助金额:23.0万元
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批准年份:2001
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负责人:陈诺夫
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依托单位: