Mechanical deformation of layered semiconductor structures

层状半导体结构的机械变形

• 批准号: DP0344167
• 负责人: Prof Jodie Bradby
• 金额: $ 17.48万
• 依托单位: The Australian National University
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2003
• 资助国家: 澳大利亚
• 起止时间: 2003-04-14 至 2006-10-19
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP0344167
• 关键词: Mechanical; deformation; layered; semiconductor; structures

This project aims to reveal the mechanisms of mechanical deformation in thin film layered semiconductors structures. Currently, there is little knowledge in this area despite the importance of such structures in electronic and optoelectronic devices. Layered structures are not expected to respond to mechanical stress in the same way as bulk materials, as a result of size constraints in nanoscale films, the critical importance of strain, and the possibility of disparities between the mechanical properties of the individual layers. The results of this project will dramatically enhance the understanding of the deformation responses of nanoscale structures to mechanical stress.

本计画旨在揭示薄膜层状半导体结构之机械变形机制。 目前，尽管这种结构在电子和光电器件中很重要，但在这一领域的知识很少。 由于纳米级薄膜的尺寸限制、应变的至关重要性以及各个层的机械性能之间存在差异的可能性，预计层状结构不会以与块状材料相同的方式对机械应力做出响应。 该项目的结果将大大提高对纳米结构对机械应力的变形响应的理解。