Investigating the behaviour of semiconductor materials under extreme pressures

研究极端压力下半导体材料的行为

• 批准号: FT130101355
• 负责人: Prof Jodie Bradby
• 金额: $ 59.5万
• 依托单位: The Australian National University
• 依托单位国家: 澳大利亚
• 项目类别: ARC Future Fellowships
• 财政年份: 2014
• 资助国家: 澳大利亚
• 起止时间: 2014-01-01 至 2018-07-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/FT130101355
• 关键词: Investigating; behaviour; semiconductor; materials; under

The study of materials at extreme pressures is important and interesting from both a technological and a fundamental perspective. This project will significantly advance the understanding of how semiconductors react to high-pressure environments by exploiting new and innovative approaches to both the application of the extreme pressure and the in-situ measurement of the resultant structures. It will establish a comprehensive understanding of the deformation behaviour of semiconductors that will be essential in the search for advanced materials with entirely new properties that may be useful in semiconducting device applications.

从技术和基础的角度来看，极端压力下材料的研究是重要和有趣的。该项目将通过开发新的和创新的方法来应用极端压力和现场测量所产生的结构，从而大大提高对半导体对高压环境的反应的理解。它将建立对半导体变形行为的全面理解，这对于寻找具有全新性能的先进材料至关重要，这些材料可能在半导体器件应用中很有用。