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Development of nanodevice processes for carbon nanotubes

碳纳米管纳米器件工艺的开发

基本信息

批准号：
14205005
负责人：
ISHIBASHI Koji
金额：
$ 35.53万
依托单位：
RIKEN
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14205005/
关键词：
carbon nanotube quantum dots single electron transistor single electron inverter local beam irradiation large current flowing process position controlled growth tunnel barrier 単層カーボンナノチューブ多層カーボンナノチューブバンドルクーロン振動離散化量子準位過電流ナ

项目摘要

Device processes have been developed for carbon nanotubes to be applied for nanodevices. First of all, a process to fabricate electrical contacts to individual carbon nanotubes was developed, based on the mark alignment technique in electron beam lithography. For single-wall carbon nanotubes (SWCNTs), the tunnel barrier is formed at the edge of the metallic contact, and a whole nanotube between the contacts form a single quantum dot. This fact indicates that the SWCNTs underneath the contact is insulating. The barrier height of the tunnel barrier was estimated by measuring a temperature dependence of the electronic transport, and was turned out to be several meV. This means that despite the large charging energy of the SWCNT single electron transistor, the operation temperature is not limited by the charging energy, but is limited by the barrier height. This coincides with an experimental observation that the Coulomb blockade effect is observed up to around 20K.In the course of this study, we have pointed out the important factor for the carbon nanotube device process. These are 1)a need to form artificial tunnel barriers, 2)a need to overcome the bundle effect, and 3)a need to grow carbon nanotubes with possible position control. To tackle these problems, we have attempted following approaches. 1)Tunnel barrier : We have developed a local Ar beam irradiation technique to multi-wall carbon nanotubs. 2)Bundle effect : To overcome the problem, the large current flowing process has been developed, where the peaks from single quantum dots were selectively observed. 3)Position control growth : To do this, we have developed a chemical vapor deposition technique with patterned catalysts and an applied electric field.In the present project, we believe that the basic technique to fabricate nanodevices with carbon nanotubes have been established

已经开发了用于纳米器件的碳纳米管的器件工艺。首先，基于电子束光刻中的标记对准技术，开发了一种制备单个碳纳米管的电接触的工艺。对于单壁碳纳米管，隧道势垒形成在金属接触的边缘，接触之间的整个纳米管形成单个量子点。这一事实表明，触头下面的单壁碳纳米管是绝缘的。通过测量电子输运对温度的依赖关系，估计了隧道势垒的高度，得到了几个meV。这意味着，尽管SWCNT单电子晶体管的充电能量很大，但工作温度不受充电能量的限制，而是受势垒高度的限制。这与实验观察到的库仑阻塞效应在20K左右是一致的。在本研究过程中，我们指出了影响碳纳米管器件工艺的重要因素。它们是1)需要形成人工隧道势垒，2)需要克服束效应，以及3)需要生长具有可能的位置控制的碳纳米管。为了解决这些问题，我们尝试了以下方法。1)隧道势垒：我们发展了多壁碳纳米管的局域Ar束辐照技术。2)束效应：为了克服这一问题，发展了大电流流动过程，选择性地观察到单个量子点的峰。3)位置控制生长：为了做到这一点，我们开发了一种带有图案化催化剂和外加电场的化学气相沉积技术。在本项目中，我们相信已经建立了用碳纳米管制备纳米器件的基本技术