A study on maskless selective epitaxy of compound semiconductor using low energy FIB

低能FIB化合物半导体无掩模选择性外延研究

• 批准号: 14550298
• 负责人: PAK Kangsa
• 金额: $ 2.3万
• 依托单位: Toyohashi University of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14550298/
• 关键词: Focused ion beam; Semiconducting gallium arsenide; Selective epitaxy; Doping; Molecular beam epitaxy; Gallium compounds; FIB; GaAs; 選択成長; マスクレス; 化合物半導体

We introduced new growth/doping method foe selective micro-area and demonstrated in-situ maskless selective doping of compound semiconductor films using low-energy focused ion beam. This in-situ growth and doping method is thought to be essential in maskless selective device fabrication.In this study, maskless selective growth of Sn and Be-doped GaAs films were performed using a low energy (30-200 eV)Sn and Be-Ga focused ion beam (FIB), with simultaneous irradiation of As_4 molecular beam. Selective n-type and p-type films of GaAs were grown successfully. Moreover, it was found that irradiation damages could be minimized and the surface morphology was improved using the low-energy FIB. A p-n junction was formed on n^+-typeGaAs substrate by maskless selective growth for the first time. The I-V characteristics of the sample confirmed the p-n structure. These results indicate this method would be sutable for making maskless selective micro--device fabrication.

介绍了一种新的选择性微区生长/掺杂方法，并利用低能聚焦离子束对化合物半导体薄膜进行了原位无掩模选择性掺杂。本研究采用低能（30-200 eV）Sn和Be-Ga聚焦离子束（FIB），同时用As_4分子束辐照，实现了Sn和Be掺杂GaAs薄膜的无掩模选择性生长。成功地生长了GaAs的选择性n型和p型薄膜。此外，它被发现，可以最大限度地减少辐射损伤和表面形貌得到改善，使用低能量FIB。首次采用无掩模选择性生长方法在n^+型GaAs衬底上形成了p-n结。样品的I-V特性证实了p-n结构。这些结果表明该方法适用于无掩模选择性微器件制造。

项目成果

Maskless selective direct growth and doping of GaAs using a Ga-Sn low Energy focused ion beam for in-situ micro-device structure fabrication

使用 Ga-Sn 低能聚焦离子束进行 GaAs 无掩模选择性直接生长和掺杂，用于原位微型器件结构制造

• 发表时间: 2002
• 期刊: Journal of Crystal Growth 237-239
• 作者: D.H.Cho;Y.Suzuki;M.Tanaka;M.Hachiro;K.Pak
• 通讯作者: K.Pak

低エネルギー集束イオンビームを用いたGaAsのマスクレス選択成長におけるドーピングと評価

使用低能量聚焦离子束无掩模选择性生长 GaAs 的掺杂和评估

• 发表时间: 2003
• 期刊: 電子情報通信学会 信学技報 CPM2003-31
• 作者: 西山友和;金恩美;沼田和俊;朴康司
• 通讯作者: 朴康司

Maskless selective growth and doping of GaAs using a low energy focused ion beam for in-situ micro-device structures fabrication, and its evaluation

使用低能量聚焦离子束的 GaAs 无掩模选择性生长和掺杂用于原位微器件结构制造及其评估

• 发表时间: 2003
• 期刊: Technical Report of IEICE.ED2003-32, CPM2003-31, SDM2003-32
• 作者: T.Nishiyama;E.M.Kim;K.Numata;K.Pak
• 通讯作者: K.Pak

Maskless selective growth and in-situ Beryllium-doping of GaAs grown by Low-energy focused ion beam

低能聚焦离子束生长砷化镓的无掩模选择性生长和原位铍掺杂

• 发表时间: 2005
• 期刊: Journal of Crystal Growth 印刷中
• 作者: E.M.Kim;T.Nishiyama;K.Numata;S.Itoh;T.Gotoh;K.Pak
• 通讯作者: K.Pak

D.H.Cho, Y.Suzuki, M.Tanaka, M.Hachiro, K.Pak: "Maskless selective direct growth and doping of GaAs using a Ga-Sn low Energy focused ion beam for in-situ micro-device structure fabrication"Journal of Crystal Growth. 237-239. 1455-1459 (2002)

D.H.Cho、Y.Suzuki、M.Tanaka、M.Hachiro、K.Pak：“使用 Ga-Sn 低能量聚焦离子束进行 GaAs 的无掩模选择性直接生长和掺杂，用于原位微型器件结构制造”Journal of