A study on maskless selective epitaxy of compound semiconductor using low energy FIB

介绍了选择性微区生长/掺杂的新方法，并用低能聚焦离子束实现了化合物半导体薄膜的原位无掩膜选择性掺杂。这种原位生长和掺杂的方法被认为是制作无掩模选择器件的关键。在本研究中，使用低能量(30-200 eV)的锡和Be-Ga聚焦离子束(FIB)，在As_4分子束的同时照射，实现了锡和Be掺杂的无掩模选择生长。成功地生长了选择性的n型和p型GaAs膜。此外，还发现使用低能量的FIB可以最大限度地减少辐射损伤，并改善表面形貌。首次采用无掩模选择性生长的方法在n^-型砷化镓衬底上形成了p-n结。样品的I-V特性证实了p-n结构。这些结果表明，该方法适用于制作无掩模的选择性微器件。

We introduced new growth/doping method foe selective micro-area and demonstrated in-situ maskless selective doping of compound semiconductor films using low-energy focused ion beam. This in-situ growth and doping method is thought to be essential in maskless selective device fabrication.In this study, maskless selective growth of Sn and Be-doped GaAs films were performed using a low energy (30-200 eV)Sn and Be-Ga focused ion beam (FIB), with simultaneous irradiation of As_4 molecular beam. Selective n-type and p-type films of GaAs were grown successfully. Moreover, it was found that irradiation damages could be minimized and the surface morphology was improved using the low-energy FIB. A p-n junction was formed on n^+-typeGaAs substrate by maskless selective growth for the first time. The I-V characteristics of the sample confirmed the p-n structure. These results indicate this method would be sutable for making maskless selective micro--device fabrication.