In-situ micro-structure fabrication of semiconductor device using maskless selective growth with FIB

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The maskless selective epitaxy(MLSE) of III-V semiconductor compounds could become an important technique in the preparation of complex integrated device structures such as optoelectronic integrated circuits(OEICs). Focused ion beam(FIB) technology is useful for semiconductor maskless processes such as doping, ion beam assisted etching and deposition in high vacuum. Recently, we investigated on Sn high doped-GaAs, and we successfully fabricated MLSE growth layers of n-and p-GaAs. Using the result, we attempted in fabricating selective p-n junctions and succeeded in-situ pn junction device formation.