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Atomic Layer Growth of Conductivity Controlled ZnO Thin Films

电导率控制的 ZnO 薄膜的原子层生长

基本信息

批准号：
14550308
负责人：
SAITO Koki
金额：
$ 1.86万
依托单位：
Teikyo University of Science & Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14550308/
关键词：
ZnO ALE MOCVD Ga-doping N-doping Atomic Layer Growth Sapphire substrate GaN template

项目摘要

In this research, crystal growth technique of atomic layer epitaxy (ALE) was used to obtain n- and p-type ZnO thin films.At first, ZnO thin films were grown on sapphire substrates using diethylzinc (DEZ) and water (H_2O) as precursors. By optimizing the growth conditions, ALE growth conditions of ZnO thin films were clarified. In addition, it was observed that the GaN templates were effective to improve the crystal quality of ZnO thin films.By using triethylgallium (TEG) as n-type dopant, it was observed that the electron concentration was increased with the increase of the amount of supplied TEG.On the other hand, monomethylhydrazine (MMHy) was used as p-type dopant. Raman spectra revealed nitrogen (N)-related vibrational modes at 275, 510, 582 and 643 cm^<-1> in addition to the host phonons of ZnO. The intensity of these additional modes was increased with increasing the amount of MMHy. However, as-grown MMHy-doped ZnO films showed n-type conductivity. In order to activate N atoms as acceptors, thermal annealing in oxygen ambient was performed. By capacitance-voltage (C'V) measurements, MMHy-doped ZnO layer annealed at 800 ℃ showed p-type conductivity with the hole concentration of 2×10^<15> cm^<-3>. In addition, the neutral acceptor-bound exciton (A^0X) emission and donor-acceptor pair (DAP) emission were observed in N-doped ZnO layer annealed at 800 ℃ by low temperature photoluminescence (PL) measurements.These results suggest that n- and p-type ZnO thin films were obtained and the conductivity controlled ZnO thin films were successfully grown by ALE.

本研究采用原子层外延（ALE）晶体生长技术，以二乙基锌（DEZ）和水（H_2O）为前驱体，在蓝宝石衬底上生长了n型和p型ZnO薄膜。通过优化生长条件，明确了ZnO薄膜的ALE生长条件。另外，GaN模板可以有效地改善ZnO薄膜的晶体质量;采用三乙基镓（TEG）作为n型掺杂剂，发现随着TEG用量的增加，ZnO薄膜的电子浓度增加;采用一甲基肼（MMHy）作为p型掺杂剂，发现ZnO薄膜的电子浓度增加。拉曼光谱揭示了氮（N）相关的振动模式在275，510，582和643 cm-1处<-1>除了ZnO的主体声子。这些附加模式的强度随着MMHy含量的增加而增加。然而，作为生长MMHy-doped ZnO薄膜显示n型导电性。为了激活N原子作为受主，在氧气环境中进行热退火。电容-电压（C 'V）测试表明，MMHy掺杂的ZnO薄膜在800 ℃退火后呈现p型导电，空穴浓度为2×10^<15>cm^2<-3>。此外，通过低温光致发光（PL）测量，在800 ℃退火的N掺杂ZnO薄膜中观察到了中性的受主束缚激子（A^0X）发射和施主-受主对（DAP）发射，这些结果表明，利用ALE方法成功地生长出了n型和p型ZnO薄膜，并实现了电导控制的ZnO薄膜。