Impurity doping into semiconductors by electron irradiation with low energy

杂质原子可以通过电子辐照以相当低的能量(750keV能量用于研究)掺杂到半导体衬底中。这种方法称为电子束掺杂(EBD)。本研究采用硅、砷化镓、碳化硅和金刚石作为半导体衬底，并在衬底中掺杂了锌、硅、硼原子。用二次离子质谱仪(SIMS)观察了EBD后衬底中杂质原子的分布。对典型样品的光致发光(PL)进行了能量为750keV的电子辐照，其中标记[/]表示元素材料通过蒸发沉积在衬底上，标记[//]表示一个表面与另一个表面接触。在Si/P//P/Si结构上电子辐照掺杂P原子的Si衬底和在B4C//Si双层结构中掺杂B原子的Si衬底上分别形成了pn结。

Impurity atoms can be doped into semiconductor substrates by electron irradiation with considerably low energy (750 keV energy was used for the investigation). This method is named electron beam doping (EBD). In this investigation Si, GaAs, SiC and diamond were used as semiconductor substrates, and Zn, Si B and B atoms were doped into the substrates. Distribution of impurity atoms in the substrate was observed by SIMS (Secondary Ion Mass Spectrometry) after EBD. Photoluminescence (PL) was also measured for typical samples.Electron irradiation with energy of 750 keV was carried out on every three-layer structure of GaAs/Zn//Zn/GaAs, GaAs/Si//Si/GaAs, GaAs//Si//GaAs, Si//P//Si, Si/B_6Si//Si, Si//Ge//Si, where a mark [/] denotes that an element material is deposited on the substrate by evaporation and a mark [//] denotes that a surface is in contact with other one. SIMS results showed impurity atoms were doped into all substrates.Formation of pn junctions was confirmed on samples : the Si substrate doped with P atoms by the electron irradiation on the Si/P//P/Si structure and the Si one doped with B atoms using two-layer structure of B_4C//Si, respectively.