Impurity doping into semiconductors by electron irradiation with low energy
通过低能量电子辐照将杂质掺杂到半导体中
基本信息
- 批准号:14550338
- 负责人:
- 金额:$ 2.24万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2002
- 资助国家:日本
- 起止时间:2002 至 2004
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Impurity atoms can be doped into semiconductor substrates by electron irradiation with considerably low energy (750 keV energy was used for the investigation). This method is named electron beam doping (EBD). In this investigation Si, GaAs, SiC and diamond were used as semiconductor substrates, and Zn, Si B and B atoms were doped into the substrates. Distribution of impurity atoms in the substrate was observed by SIMS (Secondary Ion Mass Spectrometry) after EBD. Photoluminescence (PL) was also measured for typical samples.Electron irradiation with energy of 750 keV was carried out on every three-layer structure of GaAs/Zn//Zn/GaAs, GaAs/Si//Si/GaAs, GaAs//Si//GaAs, Si//P//Si, Si/B_6Si//Si, Si//Ge//Si, where a mark [/] denotes that an element material is deposited on the substrate by evaporation and a mark [//] denotes that a surface is in contact with other one. SIMS results showed impurity atoms were doped into all substrates.Formation of pn junctions was confirmed on samples : the Si substrate doped with P atoms by the electron irradiation on the Si/P//P/Si structure and the Si one doped with B atoms using two-layer structure of B_4C//Si, respectively.
通过较低能量(750 keV能量)的电子辐照,可以将杂质原子掺杂到半导体衬底中。这种方法被称为电子束掺杂(EBD)。本研究采用Si、GaAs、SiC和金刚石作为半导体衬底,并在衬底中掺杂Zn、Si B和B原子。用二次离子质谱法观察了底物中杂质原子的分布。对典型样品进行了光致发光(PL)测定。对GaAs/Zn//Zn/GaAs、GaAs/Si//Si/GaAs、GaAs//Si//GaAs、Si//P//Si、Si/B_6Si//Si、Si//Ge//Si三层结构进行750 keV能量的电子辐照,其中标记[/]表示一种元素材料通过蒸发沉积在衬底上,标记[//]表示一种元素材料表面与另一种表面接触。SIMS结果表明杂质原子被掺杂到所有底物中。在样品上证实了pn结的形成:在Si/P//P/Si结构上通过电子辐照掺杂P原子的Si衬底和在B_4C//Si双层结构上通过电子辐照掺杂B原子的Si衬底。
项目成果
期刊论文数量(13)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Electron beam doping of impurity atoms into semiconductors by superdiffusion
通过超扩散将杂质原子电子束掺杂到半导体中
- DOI:
- 发表时间:2003
- 期刊:
- 影响因子:0
- 作者:Takao Wada;Hiroshi Fujimoto
- 通讯作者:Hiroshi Fujimoto
Takao Wada, Hiroshi Fjimoto: "Diodes fabricated by electron beam doping (superdiffusion) technique in semiconductors at room temperature"Defect and Diffusion Forum. Vols.221-223. 23-30 (2003)
Takao Wada、Hiroshi Fjimoto:“室温下在半导体中通过电子束掺杂(超扩散)技术制造的二极管”缺陷与扩散论坛。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Electron beam doping of impurity atoms into semiconductors by kick-out mechanism
通过踢出机制将杂质原子电子束掺杂到半导体中
- DOI:
- 发表时间:2003
- 期刊:
- 影响因子:0
- 作者:Takao Wada;Hiroshi Fujimoto
- 通讯作者:Hiroshi Fujimoto
Electron beam doping (superdiffusion) technique in semiconductors at room temperature
室温下半导体电子束掺杂(超扩散)技术
- DOI:
- 发表时间:2003
- 期刊:
- 影响因子:0
- 作者:Takao Wada;Hiroshi Fujimoto
- 通讯作者:Hiroshi Fujimoto
Diodes fabricated by electron beam doping (superdiffusion) technique in semiconductors at room temperature
室温下在半导体中通过电子束掺杂(超扩散)技术制造的二极管
- DOI:
- 发表时间:2003
- 期刊:
- 影响因子:0
- 作者:Takao Wada;Hiroshi Fujimoto
- 通讯作者:Hiroshi Fujimoto
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FUJIMOTO Hiroshi其他文献
FUJIMOTO Hiroshi的其他文献
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