Fabrication of micro-light-emitting diodes in nanoimprint lithography with diamond molds
使用金刚石模具在纳米压印光刻中制造微型发光二极管
基本信息
- 批准号:14550340
- 负责人:
- 金额:$ 1.6万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2002
- 资助国家:日本
- 起止时间:2002 至 2003
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Fabrication of micro-organic light emitting diodes (OLED) in nanoimprint lithography (NIL) with chemical vapor deposited (CVD) diamond molds using polymethyl methacrylate (PMMA) as an imprinting material was investigated. The diamond molds using NIL process were fabricated with Bi_4Ti_3O_<l2> octylate (oxide) mask in electron beam lithography technology. The compact imprint apparatus (28 cm in width, 15 cm in length and 25 cm in height) using the driving power of a direct current (DC) coreless motor was developed. It was found that the optimum imprint conditions are the following: imprinting pressure, press time, substrate temperature and removal temperature were 0.8 MPa 15 mm, 180℃ and 70℃ respectively. The resulting CVD diamond molds of a concave square dot with 30 μm and 40 μm pitch were fabricated. 8-Hydroxyquinoline-aluminum (Alq), Poly(9-vinylcalbazole) (PVK) and Coumarin-6 are used as electron transport, hole transport and an emitting dopant material, respectively. The device structure of 30 μm square dot OLED fabricated by imprinting technique is indium tin oxide (ITO)PVK(lOOnm)/Alq(5Onm)/Al(lOOnm). We demonstrated successful fabrication and operation of micro-OLED devices.
研究了以聚甲基丙烯酸甲酯(PMMA)为印迹材料,利用化学气相沉积(CVD)金刚石模在纳米压印技术中制备微型有机发光二极管(OLED)。采用电子束光刻技术,采用Bi_4Ti_3O_<l2>辛酸盐(氧化物)掩模制备了零密度金刚石模具。研制了采用直流无芯电机驱动的紧凑型压印装置(宽28厘米,长15厘米,高25厘米)。结果表明,印迹的最佳条件为:印迹压力为0.8 MPa,印迹时间为15 mm,基材温度为180℃,去除温度为70℃。制备了直径为30 μm和40 μm的凹方点CVD金刚石模具。8-羟基喹啉铝(Alq)、聚(9-乙烯基咔唑)(PVK)和香豆素-6分别作为电子输运、空穴输运和发射掺杂材料。采用印迹技术制备的30 μm方点OLED器件结构为氧化铟锡(ITO)PVK(lOOnm)/Alq(5Onm)/Al(lOOnm)。我们展示了微型oled器件的成功制造和操作。
项目成果
期刊论文数量(18)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
S.Kiyohara, H.Takamatsu, K.Mori: "Microfabrication of diamond Films by Localized Electron Beam Chemical Vapour Deposition"Semiconductor Science and Technology. 17巻10号. 1096-1100 (2002)
S.Kiyohara、H.Takamatsu、K.Mori:“通过局域电子束化学气相沉积进行金刚石薄膜的微加工”《半导体科学与技术》第 17 卷,第 10 期。1096-1100 (2002)
- DOI:
- 发表时间:
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- 影响因子:0
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- 通讯作者:
S.Kiyohara, K.Mori: "Microfabrication of diamond Films by Localized Electron Beam Chemical Vapour Deposition"Semiconductor Science and Technology. 17巻・10号. 1096-1100 (2002)
S.Kiyohara、K.Mori:“通过局域电子束化学气相沉积进行金刚石薄膜的微加工”《半导体科学与技术》第 17 卷,第 10 期。1096-1100 (2002)
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- 发表时间:
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- 影响因子:0
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S.Kiyohara, K.Mori: "Micropatterning of diamond films with composite oxide mask of metal octylates in electron beam lithography"Proceedings of the 3rd International Conference and 4th General Meeting of euspen and nanotechnology. 2号. 427-430 (2002)
S.Kiyohara、K.Mori:“电子束光刻中使用金属辛酸盐复合氧化物掩模的金刚石薄膜微图案化”,euspen 和纳米技术第三届国际会议和第四届大会论文集,第 2. 427-430 号(2002 年)。
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- 影响因子:0
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S.Kiyohara, T.Motoishi, K.Mori: "Nanopatterning of diamond films with composite oxide mask metal octylates in Electron Beam Lithography"J. Materials Sci. Materials in Electronics. Vol. 15No. 2. 99-102 (2004)
S.Kiyohara、T.Motoishi、K.Mori:“电子束光刻中使用复合氧化物掩模金属辛酸盐的金刚石薄膜纳米图案化”J。
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- 影响因子:0
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S.Kiyohara, T.Motoishi, K.Mori: "Nanopatterning of Chemical Vapor Deposited Diamond Films in Room Temperature Nanoimpnint Lithography Using Diamond Molds"Mat. Res. Soc. Sym Proc.. Vol. EXS-2. 73-75 (2004)
S.Kiyohara、T.Motoishi、K.Mori:“使用金刚石模具在室温纳米压印光刻中化学气相沉积金刚石薄膜的纳米图案”Mat。
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{{ truncateString('MORI Katsumi', 18)}}的其他基金
A study on the child protection legal system in the education and the sport field in Britain
英国教育、体育领域儿童保护法律制度研究
- 批准号:
22530059 - 财政年份:2010
- 资助金额:
$ 1.6万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Cooperation-Oriented Object Recognition in Cloeed Space Influenoed by Time-Variant Lighting
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11680407 - 财政年份:1999
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$ 1.6万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
The mechanism of smelting reduction of chromite ore
铬铁矿矿石熔融还原机理
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10650733 - 财政年份:1998
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Low Temperature Routes for Joining Ceramics for High-Temperature Application
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07555524 - 财政年份:1995
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$ 1.6万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Viscosity of Flux for Steel Refining
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06650841 - 财政年份:1994
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60550474 - 财政年份:1985
- 资助金额:
$ 1.6万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
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