Atomic processes on ion-bombarded surface
Atomic processes on ion-bombarded surface
批准号:
15340128
负责人:
TSURUBUCHI Seiji
金额:
$8.58万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2005
中文摘要
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英文摘要
1.Experiment with high energy ion beamSecondary electrons and ions were energy analyzed as a function of surface-oxygen coverage under ion beam bombardment of Al, Mo, Ti surfaces. Basic analysis and discussions were made in detail. Secondary electrons were energy analyzed with a hand-made half sphere analyzer which is an integration type with respect to scattered angles. The yield of secondary electrons and change in the work function were measured as a function of surface-oxygen coverage. Secondary ions were measured with a time of flight type mass analyzer. It was found that the change of surface electronic state due to oxygen adsorption plays a fundamental role in emission processes of these secondary particles.2.Experiment with highly charged ionsInteraction between highly charged ions and solid surfaces were investigated under the condition of grazing incidence in order to pick up the detail of so called potential sputtering. Secondary ions emitted from a surface were mass analyzed with a time of flight mass analyzer in coincidence with scattered neutralized projectiles. The three dimensional momentum distribution of fragment ions was measured with a position sensitive detector coupled with a TOF analyzer. A cubic-GaN made by a method of halogen transport atomic layer epitaxy was investigated to have information on surface polarity. It was found that the mass spectra differ clearly between the (0001) and (0001) surfaces. The kinetic energy distribution of H^+ produced from adsorbed hydrocarbon molecules also widely differs for two surface directions. It was concluded that the surface polarity can be effectively checked with the present experimental setup using highly charged ions.
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鶴淵誠二, 和田雷太, 本橋健次: "多価イオン衝撃で表面からスパッタされた2次イオンの運動量画像分光"第64回応用物理学会学術講演会 講演予稿集. No.2. 665 (2003)
Seiji Tsurubuchi、Raita Wada、Kenji Motohashi:“通过多价离子轰击从表面溅射的二次离子的动量成像光谱”第 64 届日本应用物理学会年会记录第 2. 665 号(2003 年)。
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Survival coefficient of Ga(5s^2S_<1/2>) sputtered from a GaAs surface
从 GaAs 表面溅射的 Ga(5s^2S_<1/2>) 的生存系数
DOI:
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发表时间:
2005
期刊:
Nuclear Instruments and Methods in Physics Research Section B 232(1-4)
影响因子:
--
作者:
[Tsurubuchi, T.Nimura]
通讯作者:
T.Nimura
鶴淵誠二, 和田雷太, 本橋健次: "多価イオンとAlおよびAl_2O_3表面との相互作用"日本物理学会題58回年次大会 講演予稿集. 58-1. 135 (2003)
Seiji Tsurubuchi、Raita Wada、Kenji Motohashi:“多价离子与 Al 和 Al_2O_3 表面的相互作用”第 58 届日本物理学会年会论文集 58-1(2003 年)。
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Seiji Tsurubuchi, Kenji Motohashi: "Energy-gain-characterized 3D momentum-imaging spectroscopy of N^+ ions produced in Ar^<q+> (q=3,8,9,11 and 12) collisions with N_2 molecules"J.Phys.B : At.Mol.Opt.Phys.. 36-18. 3847-3863 (2003)
Seiji Tsurubuchi、Kenji Motohashi:“Ar^<q>(q=3、8、9、11 和 12)与 N_2 分子碰撞中产生的 N^ 离子的能量增益特征 3D 动量成像光谱”J.Phys。
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Emission cross sections in low-energy collisions between He^+, Ne^+ ions and CF_4 molecule
He^ 、 Ne^ 离子与 CF_4 分子低能碰撞的发射截面
DOI:
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发表时间:
2005
期刊:
J.Phys.B : Atomic Molecular and Optical Physics 38
影响因子:
--
作者:
[K.Motohashi, T.Takahashi, N.Takahashi, S.Tsurubuchi]
通讯作者:
S.Tsurubuchi
共 9 条
Study on the primary dissociation processes of monosilane molecule by electron impact
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批准号:63540284
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.22万
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财政年份:1988
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负责人:TSURUBUCHI Seiji
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依托单位:
海外基金