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225nm UV light emitting BN at the room temperature prepared by laser-plasma synergetic deposition

激光-等离子体协同沉积室温下制备225nm紫外发光氮化硼

基本信息

批准号：
15360039
负责人：
KOMATSU Shojiro
金额：
$ 9.6万
依托单位：
National Institute for Materials Science
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2005
项目状态：
已结题

项目摘要

(1)We have carried out the research on a new type of BN, namely, sp^3-bonded 5H-BN, which was originally found at the NIMS for the first time and reported in 1999. This BN is prepared in the forms of powder as well as films by synergetic deposition methods using plasma and laser. This BN shows a UV emission sharply at 225nm and broadly at 300nm. The former band is observed only in the powder samples most, probably due to the high crystallinity. On the other hand, film samples show only the 300 nm broad band. It is noteworthy that both bands are excited at room temperatures. To achieve the final goal of application of these samples to UV light emission devices, it is important to understand the growth mechanism and the relationship between the structural characteristics and the UV properties.(2)Since the structural properties originate from the growth dynamics, we invented a new in-situ observation method of the growth rates of films by utilizing photoluminescence (PL) from the samples … More excited by the processing excimer laser. We could find the transition of the growth mode from initial fibrous growth to the micro-cone formation at the mid stage by scanning electron microscopy and the corresponding change of the growth rate was clearly seen in the in-situ PL observation.(3)As for the growth of powder samples, we observed transmission electron microscopic (TEM) images corresponding to some different stages of the growth. Based on them, we concluded the existence of a precursor which is most likely in the supercritical fluid state of BN. We built a growth model using the mathematics of 2-dimensional nonlinear dynamical system, and by which we showed a synergetic effect of plasma and laser to induce the nonequilibrium phase formation of sp^3-bonded 5H-BN.(4)As for the film growth mechanism, based on experimental observations, we could demonstrate that it was a photochemically-activated growth where precursor radicals were supplied from a plasma. We build a model where forced-oscillatory photochemical reactions compete with surface diffusion of the precursor radicals. By the model, we could explain the temperature-dependent uniform-fractal transition of the micro-cone distribution observed on Si(100) substrates, and the origin of the observed fractal morphology.(5)The lifetime of the UV emission was short enough to indicate that this material is a direct-transition semiconductor and applicable to future solid state UV LED. Less

(1)我们对一种新型BN进行了研究，即sp^3键合的5H-BN，该BN最初是在NIMS首次发现的，并于1999年报道。这种氮化硼是通过等离子体和激光的协同沉积方法以粉末和薄膜的形式制备的。该BN在225nm处紫外辐射明显，在300nm处紫外辐射较宽。前者仅在粉末样品中观察到最多，可能是由于高结晶度。另一方面，薄膜样品仅显示300 nm的宽带。值得注意的是，两个波段在室温下都被激发。为了实现将这些样品应用于紫外发射器件的最终目标，了解其生长机制以及结构特征与紫外性能之间的关系至关重要。(2)由于薄膜的结构特性源于薄膜的生长动力学，我们发明了一种利用样品的光致发光（PL）来观察薄膜生长速率的新方法。通过扫描电镜我们可以发现生长模式从最初的纤维状生长到中期的微锥状生长的转变，并且在原位PL观察中可以清楚地看到相应的生长速率变化。(3)对于粉末样品的生长，我们观察了不同生长阶段对应的透射电镜（TEM）图像。在此基础上，我们得出了一个前驱体的存在，该前驱体极有可能处于BN的超临界流体状态。利用二维非线性动力系统数学建立了生长模型，证明了等离子体和激光的协同作用可诱导sp^3键合5H-BN的非平衡相形成。(4)薄膜的生长机制，根据实验观察，我们可以证明这是一种光化学激活的生长，前体自由基由等离子体提供。我们建立了一个模型，其中强迫振荡光化学反应与前体自由基的表面扩散竞争。通过该模型，我们可以解释Si（100）衬底上微锥分布随温度的均匀分形转变，以及分形形态的起源。(5)紫外发射的寿命足够短，表明该材料是一种直接跃迁半导体，适用于未来的固态紫外LED。少

项目成果

期刊论文数量（41）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Fractal-arrangements of electron field emitters in sp3-bonded 5H-BN films prepared by pulsed laser assisted plasma CVD

脉冲激光辅助等离子体CVD制备的sp3键合5H-BN薄膜中电子场发射体的分形排列

DOI：
发表时间：
2005
期刊：
Proceedings of plasma science 2005/the 22^<nd> symposium on plasma processing
影响因子：
0
作者：
S.Komatsu;D.Kazami;A.Okudo;Y.Moriyoshi;K.Okada
通讯作者：
K.Okada

new type of BN films for FED that exceeds CNT

超越CNT的FED用新型BN薄膜