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Fabrication of Super-Heterostructures for Advanced Optoelectronic Quantum Devices

先进光电量子器件的超异质结构制造

基本信息

批准号：
15360159
负责人：
WATANABE Masahiro
金额：
$ 9.28万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2005
项目状态：
已结题

项目摘要

New type of light emitting devices or electron devices for future LSI technology using Super-heterostructures are studied. Intersubband quantum cascade lasers using CdF_2-CaF_2 heterostructures have been proposed and novel crystal growth technique Nanoarea-Local-Epitaxy has been demonstrated. Energy subbands in the quantum wells has been confirmed using resonant tunneling diode with double- and triple-barrier structures. And moreover, spontaneous emission from CdF_2-CaF_2 single cascade structures has been observed for the first time.Results obtained in this research are as follows.(1) Near-infrared electroluminescence from a single-period (CdF_2/CaF_2) inter-subband quantum cascade structure on a Si substrate has been observed for the first time. The CdF_2/CaF_2 heterostructure is a good candidate for realizing a Si-based short-wavelength quantum cascade laser because of its large conduction band discontinuity of 2.9 eV and small lattice mismatch with the Si substrate. In the experiment, an active region consisting of (CdF_2/CaF_2) heterostructures was grown epitaxially on the Si substrate by molecular beam epitaxy, and an Au/Al electrode was evaporated on the active region. The wafer was polished mechanically and cleaved. Electroluminescence from the device was observed in the near-infrared region at room temperature for the first time.(2) Epitaxial growth of high-quality CdF_2/CaF_2 heterostructures on Si(100) substrate has been demonstrated using Nanoarea-Local-Growth and in-situ post-annealing for solid phase epitaxy. Using this method, room temperature high peak to valley current ratio (>10^5) of CdF_2/CdF_2 resonant tunneling diode structures has been demonstrated on Si(100) substrate for the first time.

研究了应用超异质结技术的新型发光器件或电子器件。提出了CdF_2-CaF_2异质结子带间量子级联激光器的概念，并提出了一种新的晶体生长技术--纳米局域外延技术。量子威尔斯阱中的子能带已经用双势垒和三势垒结构的共振隧穿二极管证实。此外，还首次观察到CdF_2-CaF_2单级联结构的自发辐射。(1)首次观察到了Si衬底上单周期（CdF_2/CaF_2）子带间量子级联结构的近红外电致发光。CdF_2/CaF_2异质结具有2.9eV的大导带不连续性和与Si衬底的小晶格失配，是实现短波长量子级联激光器的理想材料。实验中，采用分子束外延技术在Si衬底上外延生长了由（CdF 2/CaF 2）异质结构组成的有源区，并在有源区上蒸镀了Au/Al电极。将晶片机械抛光并切割。首次在室温下近红外区观察到器件的电致发光。(2)采用纳米局域生长和原位后退火固相外延技术在Si（100）衬底上外延生长了高质量的CdF_2/CaF_2异质结构。利用这种方法，首次在Si（100）衬底上实现了室温高峰谷电流比（>10^5）的CdF_2/CdF_2共振隧穿二极管结构。