Development of Organic FET/LD Using Self-Organized Low-Dimensional Crystals

使用自组织低维晶体开发有机 FET/LD

• 批准号: 16350101
• 负责人: YANAGI Hisao
• 金额: $ 8.45万
• 依托单位: Kobe University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-16350101/
• 关键词: Self-organization; Low-dimensional crystals; Field-effect transistor; Laser diode; Stimulated resonance Raman scattering; Optical amplification; P; N junstion; Current-injected emission; π共役系オリゴマー; 有機半導体

In this study towards development of organic laser diodes (OLD), we first found that mirror-less laser actions from low-dimensional crystals of thiophene/phenylene co-oligomers (TPCO) based on stimulated resonant Raman scattering (SRRS). This light amplification effects was attributed to coherent molecular vibrations in the uniaxially oriented transition dipoles with large oscillation strength. Since the SRRS phenomena of the TPCO crystals can applicable to development of organic optical amplifiers and OLDs because of their advantages such as wide wavelength tunability with low ASE noise.In order to apply the superior light-amplification abilities of the TPCO crystals to development of OLDs, we next investigated their carrier injection and transport properties by using organic field-effect transistors (OFET) with P/N heterojunction structures. The OFET devices fabricated with co-evaporated or laminated thin films of N-type C_<60> and P-type TPCO exhibited ambipolar injection of both el … More ectrons and holes.Furthermore, we fabricated top-contact OFET devices with TPCO thin films by depositing Au source and Al:Li drain electrodes. Due to their asymmetric electrode structure with different work-function metals, those devices showed current-injected light emission under application of negative gate voltages. Microscopic observations revealed that the light emission occurred only at the edge of the drain electrode. It suggests that the holes accumulated in the TPCO channel recombine with the electrons at the drain-electrode interface. Therefore, the emission intensity is still low because the electron injection into the TPCO film is not achieved.For future progress towards development of OLDs, we should continue to find new N-type semiconducting molecules which posses high electron mobilities comparable to the hole mobility of TPCO. Furthermore, we have to improve ambipolar carrier accumulation and recombination efficiencies in the channel layer by controlling the P/N junction OFET structures. Less

在这项针对有机激光二极管（OLD）发展的研究中，我们首次发现基于受激共振拉曼散射（SRRS）的噻吩/亚苯基共低聚物（TPCO）低维晶体的无镜激光作用。这种光放大效应归因于单轴取向跃迁偶极子中具有大振荡强度的相干分子振动。由于TPCO晶体的SRRS现象可以应用于有机光放大器和奥尔兹的开发，因为它们具有宽波长可调谐性和低ASE噪声的优点，为了将TPCO晶体的上级光放大能力应用于奥尔兹开发，我们接下来使用具有P/N异质结结构的有机场效应晶体管（OFET）来研究它们的载流子注入和输运特性。用N型C_2和P型TPCO共蒸或叠层薄膜制备的OFET器件<60>表现出双极注入的特性， ...更多信息 此外，我们还通过沉积Au源极和Al：Li漏极制备了具有TPCO薄膜的顶接触OFET器件。由于具有不同功函数金属的非对称电极结构，这些器件在负栅压下表现出电流注入发光。显微镜观察显示，光发射仅发生在漏电极的边缘。这表明在TPCO沟道中积累的空穴与漏极-电极界面处的电子复合。因此，TPCO薄膜中的电子注入没有被抑制，发光强度仍然很低。在奥尔兹的发展过程中，我们应该继续寻找新的N型半导体分子，其电子迁移率与TPCO的空穴迁移率相当。此外，我们必须通过控制P/N结OFET结构来提高沟道层中双极载流子的积累和复合效率。少

项目成果

Spectrally Narrowed Emision in Single Crystals of 2,5-Bis (4-biphenylyl)-thiophene

2,5-双(4-联苯基)-噻吩单晶中的窄光谱发射

• 发表时间: 2004
• 期刊: Journal of Luminescence 108
• 作者: Keiji;Ishikawa
• 通讯作者: Ishikawa

Reciprocal space mapping and single-crystal scattering rods

• DOI: 10.1107/s0909049505030815
• 发表时间: 2005-11-01
• 期刊: JOURNAL OF SYNCHROTRON RADIATION
• 影响因子: 2.5
• 作者: Smilgies, DM;Blasini, DR;Yanagi, H
• 通讯作者: Yanagi, H

Laster Oscillation in Monolithic Molecular Single Crystals

整体分子单晶中的最后振荡

• 发表时间: 2005
• 期刊: Advanced Materials 17巻・17号
• 作者: Q.Wei;T.Nakato;Musubu Ichikawa
• 通讯作者: Musubu Ichikawa

Synthesis and Properties of poly-[di(l-naphthyl)-4-tolylamine] as a Hole Transport Material

空穴传输材料聚[二(1-萘基)-4-甲苯胺]的合成及性能

• 发表时间: 2004
• 期刊: Macromolecules 37巻・4号
• 作者: A.;Kawakami;et. al.;Hisao Yanagi;Masayoshi Nomura
• 通讯作者: Masayoshi Nomura

Light Emission from Organic Single-Crystal Field-Effect Transistors

• DOI: 10.1143/jjap.44.l1367
• 发表时间: 2005-10
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: K. Nakamura;M. Ichikawa;Rei Fushiki;Taketomi Kamikawa;Masamitsu Inoue;T. Koyama;Y. Taniguchi