Research on inter-ubiquitous-chip communication circuits using terahertz electromagnetic wave

利用太赫兹电磁波的泛在芯片间通信电路研究

• 批准号: 16360161
• 负责人: SANO Eiichi
• 金额: $ 9.73万
• 依托单位: HOKKAIDO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-16360161/
• 关键词: ubiquitous communication; wireless communication; High-frequency circuits; compound semiconductor; terahertz; metamaterial; surface plasmon; electromagnetic bandgap; アンテナ; 光導電サンプリング; 人工磁気導体

The purpose of this research is to establish fundamental device, circuit, and measurement technologies for realizing compact, low-power communication circuits with carrier frequencies raging from a few hundreds GHz to one THz. The following results have been obtained. (1)A finite-difference time-domain (FDTD) electromagnetic simulator analyzing simultaneously active devices like resonant-tunneling diodes (RTDs) and high-electron-mobility transistors (HEMTs) has been developed. (2)An active integrated antenna (AIA) oscillator consisting of InP-based HEMTs and a slot antenna was designed using the FDTD simulator. A successful operation at 110 GHz was achieved for fabricated AIAs. The difference between designed and measured oscillation frequencies was less than 1 %. (3)FDTD simulations revealed that a band-stop filter with sharp cutoff characteristics can be achieved by forming a periodic structure in a transmission line. (4)A THz time-domain sampling (THz TDS) system using low-temperatu … More re grown GaAs photoconductors has been developed. A band-stop filter was fabricated on a low-temperature grown GaAs substrate and measured successfully by the THz TDS system. (5)FDTD simulations revealed that the surface plasmon-polariton induced by plane-wave illumination plays an important role in extraordinary transmission through periodic sub-wavelength holes and that the transmission characteristics can be explained by Fano resonance model. THz TDS measurements confirmed an extraordinary transmission in the THz frequency region. (6)Detailed behavior of an artificial magnetic conductor (AMC), one of the metamaterials exhibiting unique electromagnetic characteristics not existing in nature, was analyzed with the FDTD simulator. (7)A novel multilayer structure was devised to reduce the unit-cell size in AMCs. (8)A composite right-/left-handed transmission line operating at 100 GHz was designed and fabricated using InP-based HEMT process. (9)A soliton compression can be achieved on a Schottky-diode loaded transmission line. Less

本研究的目的是建立基本的设备，电路和测量技术，实现紧凑，低功耗的通信电路的载波频率从几百GHz到一个太赫兹。取得了以下结果。(1)A开发了一种时域有限差分（FDTD）电磁模拟器，用于同时分析有源器件，如谐振隧穿二极管（RTD）和高电子迁移率晶体管（HEMT）。(2)An利用时域有限差分（FDTD）仿真软件设计了一种由InP基HEMT和缝隙天线组成的有源集成天线（AIA）振荡器。在110 GHz的成功操作实现了制造的AIA。设计振荡频率与实测振荡频率之差小于1%。（3）FDTD模拟结果表明，在传输线上形成周期性结构可以实现具有锐截止特性的带阻滤波器。(4)A低温THz时域采样（THz TDS）系统 ...更多信息 研制了再生长GaAs光电导体。在低温生长的GaAs衬底上制作了带阻滤波器，并利用THz TDS系统进行了测量。（5）FDTD模拟结果表明，平面波诱导的表面等离子体激元极化激元对亚波长周期孔的非寻常透射起着重要作用，其透射特性可用Fano共振模型解释。THz TDS测量证实了在THz频率区域的非凡传输。（6）利用时域有限差分法（FDTD）对人工磁导体（AMC）的电磁特性进行了详细分析。(7)A设计了一种新颖的多层结构以减小AMC中的晶胞尺寸。(8)A采用InP基HEMT工艺设计并制作了工作在100 GHz的复合左右手传输线。(9)A孤子压缩可以在肖特基二极管加载的传输线上实现。少

项目成果

110 GHz active integrated antenna oscillator based on full-wave design methodology and 0.1-μm gate InP-based HEMTs.

基于全波设计方法和 0.1μm 栅 InP 基 HEMT 的 110 GHz 有源集成天线振荡器。

• 发表时间: 2006
• 期刊: Abstract of 2006 RCIQE International Seminar for 21^<st> Century COE Program", Sapporo, Japan
• 作者: K.Inafune;E.Sano
• 通讯作者: E.Sano

Device and circuit technologies for millimeter-wave communications

毫米波通信器件和电路技术

• 发表时间: 2005
• 期刊: Abstract of 2005 RCIOE International Seminar vol.1
• 作者: K.Narahara;T.Otsuji;E.Sano;E.Sano;K.Narahara;K.Inafune;K.Narahara;T.Tanaka;K.Inafune;E.Sano;K.Inafune;Y.Yamazaki;楢原浩一;M.Tanaka;K.Inafune;K.Inafune;E.Sano
• 通讯作者: E.Sano

Multiband artificial magnetic conductors using stacked microstrip patch layers.

使用堆叠微带贴片层的多频带人造磁导体。

• 发表时间: 2005
• 期刊: Abstract of 2005 IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications (Beijing, China)
• 作者: K.Inafune;E.Sano
• 通讯作者: E.Sano

テラヘルツ領域用低損失コプレーナ導波路とそのEBGフィルタヘの応用

太赫兹低损耗共面波导及其在EBG滤波器中的应用

• 发表时间: 2004
• 期刊: 電子情報通信学会技術研究報告 Vol. 109, no. 296
• 作者: Y.Yamazaki;K.Inafune;M.Akazawa;E.Sano;M.Tanaka;K.Inafune;K.Inafune;佐野栄一;E.Sano;K.Inafune;Y.Yamazaki;T.Tanaka;山崎雄介;E.Sano;佐野栄一;田中毅;稲船浩司
• 通讯作者: 稲船浩司

HEMT-based nanometer devices toward tera-hertz era (invited).

基于HEMT的纳米器件迈向太赫兹时代（特邀）。

• 发表时间: 2006
• 期刊: Abstract of Int'l Workshop "Tera- and Nano-Devices : Physics and Modeling" (Aizu-Wakamatsu, Japan)
• 作者: E.Sano;T.Otsuji
• 通讯作者: T.Otsuji