DEVELOPMENT OF SMART NANO-SENSORS BY HYBRID INTEGRATION OF CSD-DERIVED THIN FILMS

锆钛酸铅（PZT）薄膜在探索其潜在性能[1-3]或其在致形相边界（MPB）附近优异的介电、铁电和压电性能的起源[4-6]方面引起了全世界的兴趣。PZT薄膜具有优异的铁电、热释电、压电和电子发射性能，有望应用于存储器件、微机电系统（MEMS）和显示器等领域。本研究采用化学溶液沉积法（CSD），通过控制分子设计前驱体、播种层和薄膜中残余应力等因素，制备了用于驱动镜阵列和光学扫描仪的高性能压电zt薄膜。影响镉衍生PZT薄膜电性能的其他因素是组成、薄膜电极和薄膜中的残余应力，残余应力主要取决于衬底，包括薄膜电极和退火工艺以及薄膜厚度。如果使用分子设计的前驱体溶液，膜的组成易于控制。本文主要制备了成分接近于致形相边界（MPB; Pb: Zr: Ti = 120:53:47）的PZT前驱体溶液，由于与半导体的相容性，采用了Pt/Ti/SiO_2/Si衬底。因此，我们在本文中关注的最后一个重要因素是薄膜中的残余应力，因为薄膜中的残余应力会强烈地影响铁电性和压电性，而薄膜中的残余应力又受到薄膜加工的强烈影响。

Lead zirconate titanate (PZT) thin films have been attracting worldwide interests in exploring their potential properties [1-3] or the origins [4-6] of their excellent dielectic, ferroelectric and piezoelectric properties near the morphotropic phase boundary (MPB). PZT thin films are expected to apply to the memory devices, micro electro mechanical systems (MEMS), and display because of their superior ferroelectric, pyroelectric, piezoelectric and electron emission properties.In this study, high-performance piezoelectric PZT thin films for actuated mirror array and optical scanner were developed by controlling the several factors, such as molecular-designed precursor, seeding layer and the residual stress in films, by a chemical solution deposition (CSD).The other factors that affect the electrical properties of the CSD-derived PZT thin films are composition, thin film electrode and the residual stress in the resultant films which strongly depends on the substrate including thin film electrode and the annealing processes as well as the film thickness. The film composition is easy to control if the molecular-designed precursor solution is used. In this paper, we mainly prepared PZT precursor solution with a composition near morphotropic phase boundary (MPB ; Pb : Zr : Ti = 120:53:47) and used Pt/Ti/SiO_2/Si substrate because of the compatibility with the semiconductor. Therefore, the last important factor we focused in this paper is the residual stress in the films because ferroelectricity and piezoelectricity should be strongly affected by the residual stress in the films which is strongly affected by the thin film processing.