DEVELOPMENT OF SMART NANO-SENSORS BY HYBRID INTEGRATION OF CSD-DERIVED THIN FILMS

锆钛酸铅(PZT)薄膜在相界附近具有优异的介电、铁电和压电性能，其潜在性质[1-3]或其优异的介电、铁电和压电性能的来源[4-6]已引起世界各国的广泛关注。PZT薄膜具有优异的铁电、热释电、压电和电子发射性能，有望应用于存储器件、微电子机械系统(MEMS)和显示器。本研究通过控制分子设计的前驱体、种子层和薄膜中的残余应力等因素，制备了用于驱动反射镜阵列和光学扫描器的高性能PZT薄膜。影响CSD制备的PZT薄膜电学性能的其他因素包括：薄膜电极和薄膜中的残余应力强烈依赖于衬底，包括薄膜电极和热处理工艺，以及薄膜厚度。如果使用分子设计的前驱体溶液，薄膜成分很容易控制。在本文中，我们主要制备了PZT前驱体溶液，其组成接近准同型相界(MPB；Ph：Zr：Ti=120：53：47)，由于与半导体的兼容性，我们使用了Pt/Ti/SiO_2/Si衬底。因此，本文关注的最后一个重要因素是薄膜中的残余应力，因为薄膜的铁电性和压电性都会受到薄膜中的残余应力的强烈影响，而薄膜的加工工艺会对薄膜中的残余应力产生强烈的影响。

Lead zirconate titanate (PZT) thin films have been attracting worldwide interests in exploring their potential properties [1-3] or the origins [4-6] of their excellent dielectic, ferroelectric and piezoelectric properties near the morphotropic phase boundary (MPB). PZT thin films are expected to apply to the memory devices, micro electro mechanical systems (MEMS), and display because of their superior ferroelectric, pyroelectric, piezoelectric and electron emission properties.In this study, high-performance piezoelectric PZT thin films for actuated mirror array and optical scanner were developed by controlling the several factors, such as molecular-designed precursor, seeding layer and the residual stress in films, by a chemical solution deposition (CSD).The other factors that affect the electrical properties of the CSD-derived PZT thin films are composition, thin film electrode and the residual stress in the resultant films which strongly depends on the substrate including thin film electrode and the annealing processes as well as the film thickness. The film composition is easy to control if the molecular-designed precursor solution is used. In this paper, we mainly prepared PZT precursor solution with a composition near morphotropic phase boundary (MPB ; Pb : Zr : Ti = 120:53:47) and used Pt/Ti/SiO_2/Si substrate because of the compatibility with the semiconductor. Therefore, the last important factor we focused in this paper is the residual stress in the films because ferroelectricity and piezoelectricity should be strongly affected by the residual stress in the films which is strongly affected by the thin film processing.