Development of Environmental-friendly Bi_4Ti_3O_<12>-based Ferroelectric Thin Film

环保型Bi_4Ti_3O_<12>基铁电薄膜的研制

• 批准号: 13555170
• 负责人: FUNAKUBO Hiroshi
• 金额: $ 5.82万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555170/
• 关键词: ferroelectric; environmental friendly; Bi_4Ti_3O_<12>- based; MOCVD; Bi_4Ti_O_<12>

The purpose of the present research is the development of lead-free ferroelectric thin films. The obtained results are summarized as follows :1. By the substitution of the lanthanide elements of the Bi site in psudoperovskite of Bi_4Ti_3O_<12>, the ferroelectric properties of Bi_4Ti_3O_<12> was dramatically improved.2. Especially Nd doped one showed large remanent polarization above 35・C/cm^2, which was compatible to that of Pb(Zr_<0.5>Ti_<0.5>)O_3 films.3. Good ferroelectricity was observed for the La doped films even at 500oC, which is useful for the device applications

本研究的目的是开发无铅铁电薄膜。主要研究结果如下：1.通过镧系元素对Bi_4Ti_3O_3中Bi位的取代<12>，Bi_4Ti_3O_3的铁电性能<12>得到了显著的改善.特别是掺Nd的薄膜，其反射极化强度大于35·C/cm^2，与Pb（Zr_<0.5>Ti_<0.5>）O_3薄膜的反射极化强度相匹配.在500 ℃下，La掺杂薄膜仍具有良好的铁电性，这对器件的应用是有益的

项目成果

Takayuki Watanabe: "Preparation and Characterization of a-and B-Axis-Oriented Epitaxially Grown Bi_4Ti_3O_<12>-Based Thin Films on Rutile-Type Oxides"Materials Research Society Proceedings. 688. 155-160 (2002)

Takayuki Watanabe：“金红石型氧化物上a轴和B轴取向外延生长的Bi_4Ti_3O_<12>基薄膜的制备和表征”材料研究学会论文集。

Takashi Kojima: "Ferroelectric Properties of Lanthanide-Substituted Bi_4Ti_3O_<12> Epitaxial Thin Films Grown by Metalorganic Chemical Vapor Deposition"Journal of Applied Physics. 93・4. 1707-1712 (2003)

小岛隆：“金属有机化学气相沉积生长的镧系元素取代的Bi_4Ti_3O_<12>外延薄膜的铁电性能”应用物理学杂志93・4（2003）。

T.Watanabe, et al.: "Orientation of Bi_4Ti_3O_<12> based Ferroelectric Thin Film Prepared on Various Kinds of Substrates by Metalorganic Chemical Vapor Deposition"J. Crystal Growth. 235. 389-393 (2002)

T.Watanabe等：“通过金属有机化学气相沉积在各种基底上制备Bi_4Ti_3O_12基铁电薄膜的取向”J。

Hiroshi Uchida: "Fabrication of V-Substituted (Bi,M)_4Ti_3O_<12>[M=Lanthanoids] Thin Films by Chemical Solution Deposition Method"Materials Research Society Proceedings. 688. C2.3.1.-C2.3.6. (2002)

Hiroshi Uchida：“通过化学溶液沉积法制备V-取代的(Bi,M)_4Ti_3O_<12>[M=镧系元素]薄膜”材料研究会论文集。

T.Watanabe, et al.: "Effect of co-substitution of La and V in Bi_4Ti_3O_<12> Thin Films on the Low Temperature Deposition"Appl. Phys. Lett.. 80. 100-103 (2002)

T.Watanabe等人：“Bi_4Ti_3O_<12>薄膜中La和V的共取代对低温沉积的影响”Appl。