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control of nano-insulating film/metal interfaces for investigation of the origin of interface potential

control of nano-insulating film/metal interfaces for investigation of the origin of interface potential
控制纳米绝缘膜/金属界面以研究界面电位的起源
批准号:
17560027
负责人:
MICHIKO Yoshitake
金额:
$2.18万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2005
资助国家:
日本
项目状态:
已结题
起止时间:
2005 至 2007

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中文摘要
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英文摘要
Band alignment via interface termination control based on thermodynamicsThe interface potential and band alignment between epitaxial alumina and metal substrate were investigated using Cu and Ni single crystals with Al addition.From the previous experiments, it is known that the interface is terminated by, oxygen (O-term) when the interface was made by depositing Cu (111) and Ni (111) on alpha alumina According to the ab-initio calculations, thermodynamically stable interface expected to be aluminum terminated when Al is mixed with Cu or Ni. It reported that the kind of atoms at the interface is dependent on the activity of Al in the substrate. Based on this calculation, the interface between alumina and Cu-Al alloy (111)and NiAl (110) was made by carefully exposing the substrate to 1024L oxygen in ultra high vacuum under the partial oxygen pressure of 5×10^8 Torr at optimized temperature. The binding energy of Al 2p and valence band spectra were obtained in-situ during the growth of epitaxial alumina. The interface potential and band alignment were quantified by interpreting these spectral results.We confirmed that the interface is Al terminated when Al is added to Cu or Ni, as suggested from ab-initio calculations. Regarding the interface potential, band alignment at the interface, the band offset, energy difference between the valence band maximum of alumina and the Fermi level of the substrates were relatively large in our experimental results. This result agreed well with the prediction given by the first-principles calculation.In conclusion, we clarified that the interface potential is governed by the kind of atoms at the interfaces. Based on this, we were successful in modifying the band offset value by adding Al to metals far the changing the kind of interface terminating atoms from oxygen to aluminum. This method is based on thermodynamics and can be applied not only for metal-alumina interfaces but also for many systems of interests.
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界面偏析を用いたバンドオフセットの制御
使用界面隔离控制能带偏移
DOI: --
发表时间: 2007
期刊:
影响因子: --
作者: [吉武道子, ソン ウェイジェ]
通讯作者: ソン ウェイジェ
基板-アルミナ膜界面のバンドアライメントに対するアルミナ極薄膜の結晶性の影響
超薄氧化铝薄膜结晶度对基体-氧化铝薄膜界面能带排列的影响
DOI: --
发表时间: 2006
期刊:
影响因子: --
作者: [吉武道子, W.Song, J.Libra,K.Masek,K.Prince,F.Sutara,V.Clab,V.Matolin]
通讯作者: J.Libra,K.Masek,K.Prince,F.Sutara,V.Clab,V.Matolin
原子レベルで平坦なエピタキシャルアルミナ極薄膜の成長
原子级平坦的超薄外延氧化铝薄膜的生长
DOI: --
发表时间: 2006
期刊:
影响因子: --
作者: [吉武道子, S.Nemsak, Y.Lykhach]
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DOI: --
发表时间: 2006
期刊:
影响因子: --
作者: [M. Yoshitake, W. Song, J. Libra, K. Masek, K. Prince, F. Sutara, V. Clab, V. Matolin]
通讯作者: V. Matolin
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