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Irradiation temperature dependence of advanced semiconductor devices

先进半导体器件的辐照温度依赖性

基本信息

批准号：
17560602
负责人：
KUDOU Tomohiro
金额：
$ 2.05万
依托单位：
Kumamoto National College of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2007
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17560602/
关键词：
proton radiation damage SiGe MOSFET 電子線高温照射 SiGe SiC

项目摘要

In the project, the degradation of the electrical performance and the generated lattice defects in Si diodes, MOS (Metal Oxide Semiconductor) FETs, SiC transistors and SiGe diode, subjected to high energy electrons, and protons, were investigated as a function of irradiation temperature or fluxThe main conclusions which can be made from the research project:1. The macroscopic device performance of Si diode is degraded by low temperature (LT) irradiation. Two radiation induced electron capture levels (Ec-0:22eV and Ec-0:40eV) can be observed by DLTS in case of low temperature neutron irradiation. The recovery of the radiation-induced damage is suppressed during LT irradiation.2. The degradation of 2-MeV electron-irradiated C-doped SiGe diodes was investigated. At the highest fluence studied (1x10^<16> e/cm^2), a different behavior of the reverse current with junction area was observed. DLTS spectra show that a broad peak is observed for p+/n and n+/p diodes after 1x10^<15> e/cm^2 electron irradiation. The degradation of the diodes is mainly attributed to the radiation-induced defects in SiGe layer3. In case of 4H-SiC metal Schottky field effect transistors, which are irradiated at room temperature with 2-MeV electrons, no performance degradation is observed by 1x10^<15> e/cm^2, while a slight increase of the linear drain current together with a decrease of the threshold voltage are noticed for lx10's e/cm^2. The degradation for low electron fluence is mainly attributed to the radiation-induced decrease of the Schottky barrier height at the gate contact. For exposures over lx 10^<16> e/cm^2, the drain current and transconductance decrease. Although no electron capture levels are observed before irradiation, three electron capture levels are induced after irradiation. The observed increase of the channel resistance is due to the induced lattice defects creating electron traps.

在该项目中，研究了硅二极管、MOS（金属氧化物半导体）FET、SiC 晶体管和 SiGe 二极管在高能电子和质子照射下的电性能退化和产生的晶格缺陷，作为辐照温度或通量的函数。该研究项目可以得出的主要结论：1。低温（LT）辐照会降低硅二极管的宏观器件性能。在低温中子辐照情况下，DLTS 可以观察到两个辐射诱导电子俘获能级（Ec-0:22eV 和 Ec-0:40eV）。 LT照射期间辐射损伤的恢复受到抑制。2．研究了 2-MeV 电子辐照的碳掺杂 SiGe 二极管的退化。在研究的最高注量（1x10^<16> e/cm^2）下，观察到反向电流随结面积的不同行为。 DLTS光谱显示，在1x10^<15>e/cm^2电子辐照后，p+/n和n+/p二极管观察到宽峰。二极管的退化主要归因于 SiGe 层中辐射引起的缺陷。对于 4H-SiC 金属肖特基场效应晶体管，在室温下用 2-MeV 电子照射，在 1x10^<15> e/cm^2 下没有观察到性能下降，而在 1x10 的 e/cm^2 下，线性漏极电流略有增加，同时阈值电压降低。低电子注量的退化主要归因于辐射引起的栅极接触处肖特基势垒高度的降低。对于超过 lx 10^<16> e/cm^2 的曝光，漏极电流和跨导会降低。尽管在照射前没有观察到电子捕获能级，但在照射后诱导了三个电子捕获能级。观察到的沟道电阻的增加是由于引起的晶格缺陷产生了电子陷阱。