Fabrication of ordered nanostructures of compound semiconductors

化合物半导体有序纳米结构的制备

• 批准号: 18510101
• 负责人: OHTAKE Akihiro
• 金额: $ 2.52万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18510101/
• 关键词: Self-organization; Quantum dot; Scanning tunneling microscopy; Gallium Arsenide; Droplet epitaxy

Assembly of nanostructures with ordered arrangement has attracted substantial recent attention. In particular, considerable efforts have been made for the fabrication of ordered nanostructures based on the self-organized processes. The purpose of this research is to fabricate ordered nanostructures of GaAs using a periodic misfit dislocation array formed at the interface of InAs/GaAs (111)A. It has been reported that InAs grows in a layer-by-layer mode on GaAs (111) A, being accompanied by the formation of the network of misfit dislocations at the interface. Since the dislocations with trigonal symmetry are equally spaced, they can serve as templates for an ordered arrangement of GaAs nanostructures.The formation of two-dimensional nanostructure arrays of metals has been demonstrated in several systems. On the other hand, for semiconductors, although one-dimensional alignment has been reported, no well-ordered arrangement in two dimensions has been observed. In the present study, GaAs nanoislands are fabricated using the growth technique so called droplet epitaxy. In this method, Ga molecular beam is supplied initially without As flux, leading to the formation of droplet-like Ga clusters on the substrate. Subsequently, an As flux is supplied which results in the crystallization of the droplet into GaAs nanocrystal.We found that Ga nanoislands are preferably formed at compressively : strained regions between buried dislocations. GaAs nanoislands fabricated by supplying As4 flux to the Ga islands also show a high degree of ordering, while simultaneous deposition of Ga and As results in random nucleation of GaAs nanoislands. Thus the method allows us to achieve an ordered two-dimensional arrangement of GaAs nanostructures, which could not be realized by the growth from simultaneous deposition of Ga and As. The present results will open the way to fabricate an ordered array of nanoislands with controlled densities

具有有序排列的纳米结构的组装最近引起了大量的关注。特别是，已经做出了相当大的努力，用于基于自组织过程的有序纳米结构的制造。本研究的目的是利用InAs/GaAs（111）A界面上形成的周期性错配位错阵列来制备GaAs的有序纳米结构。据报道，InAs在GaAs（111）A上以逐层方式生长，并伴随着界面处失配位错网络的形成。由于三角对称的位错是等间距的，它们可以作为GaAs纳米结构有序排列的模板。金属的二维纳米结构阵列的形成已经在几个系统中得到了证实。另一方面，对于半导体，虽然已经报道了一维排列，但没有观察到二维的良好有序排列。在本研究中，GaAs纳米岛的制造使用的生长技术，所谓的液滴外延。在这种方法中，Ga分子束提供最初没有作为通量，导致形成液滴状的Ga团簇的衬底上。随后，提供的作为通量，这导致在结晶的液滴到GaAs nanoislands。我们发现，Ga纳米岛优选地形成在压缩：应变区之间的掩埋位错。通过向Ga岛提供As 4通量制造的GaAs纳米岛也显示出高度的有序性，而同时沉积Ga和As导致GaAs纳米岛的随机成核。因此，该方法使我们能够实现有序的二维排列的GaAs纳米结构，这是不能实现的同时沉积Ga和As的生长。目前的研究结果将为制造具有可控密度的有序纳米岛阵列开辟道路

项目成果

Self-assembled growth of ordered GaAs nanostructures

• DOI: 10.1063/1.2338530
• 发表时间: 2006-08
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: A. Ohtake;N. Koguchi

Structures of the As-deficient phase on GaAs(001)-(2x4)

GaAs(001)-(2x4) 上缺砷相的结构

• 发表时间: 2006
• 期刊: Physical Review B 74
• 作者: M. Hayashi;H. Ebisawa;A.Ohtake
• 通讯作者: A.Ohtake

Structure and composition of Ga-rich(6x6)reconstructions on GaAs(001)

GaAs(001)上富Ga(6x6)重构的结构和成分

• 发表时间: 2007
• 期刊: Physical Review B 75
• 作者: T. Ishida;M. Shimizu;Y. Matsushima;M. Hayashi;H. Ebisawa;O. Sato;M. Kato;K. Sato;T. Yotsuya;A.Ohtake
• 通讯作者: A.Ohtake

Structure and composition of Ga-rich(6x6) reconstructions on GaAs(001)

GaAs(001) 上富 Ga(6x6) 重建的结构和成分

• 发表时间: 2007
• 期刊: Physical Review B 75
• 作者: T. Ishida;M. Shimizu;Y. Matsushima;M. Hayashi;H. Ebisawa;O. Sato;M. Kato;K. Sato;T. Yotsuya;A. Ohtake
• 通讯作者: A. Ohtake