Surface atomic structure of compound semiconductors treated with active nitrogen species

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The initial nitridation processes of GaAs(001) have been systematically studied. The structure and composition of the nitrided surface strongly depends on the preparation condition. When the GaAs(001)-(2x4) surfaces were exposed to the active N species under the As4 flux, N atoms are initially incorporated into the As lattice site at the third atomic layer in the β2(2x4) structure. On the other hand, for the nitridation without the As4 flux, the N-induced (3x3) reconstructions are formed.