Nonlinear dynamics of electric field domains in semioonductor superlattices
半导体超晶格电场域的非线性动力学
基本信息
- 批准号:18560013
- 负责人:
- 金额:$ 1.8万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (C)
- 财政年份:2006
- 资助国家:日本
- 起止时间:2006 至 2007
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Formation dynamics of electric field domains in semiconductor superlattices were investigated, and the following results were obtained.1. Electric field domain formation in multiple finite-superlattice systems has been observed by photocurrent and photoluminescence measurements, and the experimental results supports the domain formation. Since the experimental current-voltage characteristics did not show any subband-resonance peaks, the electric field domain formation is novel phenomenon. We assumed a new mechanism originating Fowler-Nordheim tunneling for thick barriers separating the finite-superlattices, and performed a simulation. The simulated results agreed very well with the experimental results, and thus the mechanism was proved as novel origin of electric field domain formation in the multiple finite-superlattice structure. In addition, we have firstly be able to observe period by period movement of the domain boundary by photoluminescence measurement of the Stark-ladder trans … More ition in the finite-superlattices.2. We found current oscillation originating from instability of electric field domain boundary in asymmetric multiple quantum well superlattices. Ordinarily, asymmetric multiple quantum well system does not show electric field domain formation. However, when a very thin barrier separates multiple asymmetric quantum wells, formation of electric field domain was observed experimentally. We have investigated this phenomenon by photoluminescence measurement, and found novel luminescence line which indicated spatially indirect hole transition. In addition, from our calculation, efficient electron wave function tunneling between a far separated quantum wells is supported due to very thin barrier. This resonance is the origin of the electric field domain formation in the asymmetric multiple quantum well superlattice. The evidence for this mechanism was supported by photoluminescence measurement from samples under electric field domain formation. The sample showed approximately 200 MHz current oscillation output. By using asymmetric multiple quantum well structures, allowance of structure design for electronic oscillators of semiconductor superlattice type will be extended more than the usual simple structured superlattices.3. Investigation on higher energy subband states and the related carrier transports was performed, which may affect electric field domain formation. Less
研究了半导体超晶格中电场域的形成动力学,并获得了以下结果。1。通过光电流和光致发光测量值观察到了多个有限 - 植物系统中的电场域形成,实验结果支持域的形成。由于实验电流 - 电压特性没有显示任何亚带呼吸峰,因此电场结构域的形成是新型现象。我们假设了一种新的机制,起源于Fowler-Nordheim隧道,用于分隔有限的植物,并进行了模拟。模拟结果与实验结果非常吻合,因此该机制被证明是在多个有限型植物结构中的电场结构域形成的新起源。此外,首先,我们可以通过粉丝发光式trans的光致发光测量来观察到域边界的周期运动……在有限的superlattices.2中更多。我们发现当前的振荡起源于不对称多量子孔中电场结构域边界的不稳定性。通常,不对称的多量子井系统不会显示电场结构域的形成。但是,当一个非常细的屏障分隔多个不对称量子井时,电场域的形成我们已经通过光燃料测量研究了这种现象,并发现了新型的发光线,这表明在空间间接孔的转变上。此外,从我们的计算中,由于非常薄的屏障,支持了远距离量子井之间的有效电波功能隧穿。这种共振是在不对称的多量子良好孔隙中,电场域形成的起源。该机制的证据得到了电场形成下样品的光量测量的支持。样品显示约200 MHz电流振荡输出。通过使用不对称的多个量子井结构,对于半导体超晶格类型的电子振荡器的结构设计允许将比通常简单的简单结构化超级晶体。3。对高能亚带状态和相关载体运输进行了研究,这可能会影响电场域的形成。较少的
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Formation of electric-field domains in a system of multiple finite superlattices
多个有限超晶格系统中电场域的形成
- DOI:
- 发表时间:2007
- 期刊:
- 影响因子:0
- 作者:K. Inomata;S. Shimomura;H. Hasegawa;M. Ogiso;H. Sugimoto;E. Nakanishi;M. Hosoda and S. Noma
- 通讯作者:M. Hosoda and S. Noma
Electric field domain formation in multiple finite-superlattice systems
多个有限超晶格系统中的电场域形成
- DOI:
- 发表时间:2007
- 期刊:
- 影响因子:0
- 作者:世古口怜奈;寺濱田美子;猪股克弘;杉本英樹;中西英二;M. Hosoda S. Noma
- 通讯作者:M. Hosoda S. Noma
Various photoluminescence properties due to Gamma-X resonance in type-I GaAs/AlAs multi-quantum wells consisting of quantum wells with different thicknesses
由不同厚度量子阱组成的 I 型 GaAs/AlAs 多量子阱中由于 Gamma-X 共振而产生的各种光致发光特性
- DOI:
- 发表时间:2008
- 期刊:
- 影响因子:0
- 作者:N.Ohtani;H.Endo;S.Hiramatsu;H.Kitamura;T.Takamatsu;and M.Hosoda
- 通讯作者:and M.Hosoda
Electric field domain formation in multiplefinite-superlattice systems
多重有限超晶格系统中电场域的形成
- DOI:
- 发表时间:2007
- 期刊:
- 影响因子:0
- 作者:Y. Yamada;et. al.;M.Hosoda and S. Noma;Katsuhiro Inomata;M. Hosoda
- 通讯作者:M. Hosoda
Photoluminescence properties affected by carrier transport between X and different first excited states originating from interface imperfection in GaAs/AlAs multiple^quantum wells
光致发光特性受 X 和不同第一激发态之间载流子传输的影响,这些第一激发态源自 GaAs/AlAs 多重量子阱中的界面缺陷
- DOI:
- 发表时间:2008
- 期刊:
- 影响因子:0
- 作者:H. Endo;S. Hiramatsu;H. Kitamura;T. Takamatsu;M. Hosoda;N. Ohtani
- 通讯作者:N. Ohtani
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HOSODA Makoto其他文献
HOSODA Makoto的其他文献
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{{ truncateString('HOSODA Makoto', 18)}}的其他基金
Dynamics of carrier transport through the higher energy subbands in semiconductor superlattices
半导体超晶格中高能子带的载流子传输动力学
- 批准号:
14350013 - 财政年份:2002
- 资助金额:
$ 1.8万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
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- 批准号:
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