Fabrication of a thermoelectric device using InSb superlattices with impurity doping

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We proposed a multifunctional sensor based on InSb thin film which has four functions such as hall sensor, infrared detector, temperature sensor, and thermoelectric power generator. The characteristic of each function is as follows.Hall sensor was evaluated by electron mobility and the maximum value was 24000cm^2/Vs at room temperature (RT). The voltage sensitivity of Infrared detector was 156mV/W when peak wavelength of infrared rays from black body was λ=6.9μm.The thermoelectric properties were evaluated using P_f, and the maximum value was 6.4×10_<-3>W/mK^<2> at 600K. And the temperature sensor can be calculated from the temperature dependence of resistance.