Confining electrons in twisted and proximity-coupled bilayer graphene

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The aim of this project is to achieve an in-depth understanding of gate-defined charge carrier confinement in van der Waals (vdW) heterostructures with tailored properties. Specifically, we will extend the technology of making gate-defined quantum dots in Bernal-stacked bilayer graphene (BLG) to more complex vdW heterostructures; in particular, heterostructures composed of BLG proximity-coupled to transition metal dichalcogenides (TMDs) and twisted bilayer graphene (tBLG) near magic angle. By performing low-temperature quantum transport measurement through this type of devices, we will shed light on layer-dependent proximity-induced spin-orbit coupling in BLG quantum dots and gain insights on electron-electron interaction in charge islands and quantum dots in tBLG. This is interesting for both quantum technological applications, including e.g. spin-qubit control techniques and light-matter coupling schemes in BLG/TMD heterostructures, as well as from the fundamental point of view, as it allows studying important coupling strength and energy scales such as spin-orbit gap and short-range electron-electron interactions. The knowledge gained in this project will extend even further the potential of 2D vdW heterostructures for quantum technological applications.