Confining electrons in twisted and proximity-coupled bilayer graphene

将电子限制在扭曲和邻近耦合双层石墨烯中

• 批准号: 535377524
• 负责人: Professor Dr. Christoph Stampfer
• 金额: --
• 依托单位: II. Physikalisches Institut A - Physik der kondensierten Materie
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/535377524?language=en
• 关键词: Confining; electrons; twisted; proximity; coupled

The aim of this project is to achieve an in-depth understanding of gate-defined charge carrier confinement in van der Waals (vdW) heterostructures with tailored properties. Specifically, we will extend the technology of making gate-defined quantum dots in Bernal-stacked bilayer graphene (BLG) to more complex vdW heterostructures; in particular, heterostructures composed of BLG proximity-coupled to transition metal dichalcogenides (TMDs) and twisted bilayer graphene (tBLG) near magic angle. By performing low-temperature quantum transport measurement through this type of devices, we will shed light on layer-dependent proximity-induced spin-orbit coupling in BLG quantum dots and gain insights on electron-electron interaction in charge islands and quantum dots in tBLG. This is interesting for both quantum technological applications, including e.g. spin-qubit control techniques and light-matter coupling schemes in BLG/TMD heterostructures, as well as from the fundamental point of view, as it allows studying important coupling strength and energy scales such as spin-orbit gap and short-range electron-electron interactions. The knowledge gained in this project will extend even further the potential of 2D vdW heterostructures for quantum technological applications.

该项目的目的是深入了解具有定制特性的范德华 (vdW) 异质结构中栅极定义的电荷载流子限制。具体来说，我们将把在伯纳尔堆叠双层石墨烯（BLG）中制造栅极定义的量子点的技术扩展到更复杂的vdW异质结构；特别是，由BLG邻近耦合到过渡金属二硫属化物（TMD）和近魔角的扭曲双层石墨烯（tBLG）组成的异质结构。通过此类器件进行低温量子输运测量，我们将揭示 BLG 量子点中层相关的邻近诱导自旋轨道耦合，并深入了解 tBLG 中电荷岛和量子点中的电子-电子相互作用。这对于量子技术应用来说都很有趣，包括例如BLG/TMD 异质结构中的自旋量子位控制技术和光-物质耦合方案，以及从基本角度来看，因为它允许研究重要的耦合强度和能量尺度，例如自旋轨道间隙和短程电子-电子相互作用。该项目中获得的知识将进一步扩展二维 vdW 异质结构在量子技术应用中的潜力。