Confining electrons in twisted and proximity-coupled bilayer graphene

本项目的目的是深入了解具有定制特性的范德华(VDW)异质结中栅定义的电荷载流子限制。具体地说，我们将把在Berna堆叠的双层石墨烯(BLG)中制作栅定义量子点的技术扩展到更复杂的VDW异质结构；特别是由BLG邻近耦合到过渡金属二卤化物(TMD)和扭曲的双层石墨烯(TBLG)组成的魔角附近的异质结构。通过这类器件的低温量子输运测量，我们将揭示BLG量子点中依赖层的邻近诱导的自旋-轨道耦合，并对tBLG中电荷岛和量子点中的电子-电子相互作用进行深入的了解。这对于量子技术的应用，包括自旋-量子位控制技术和BLG/TMD异质结中的光-物质耦合方案，以及从基本的观点来说都是有趣的，因为它允许研究重要的耦合强度和能量尺度，如自旋-轨道间隙和短程电子-电子相互作用。在这个项目中获得的知识将进一步扩展2D VDW异质结构在量子技术应用中的潜力。

The aim of this project is to achieve an in-depth understanding of gate-defined charge carrier confinement in van der Waals (vdW) heterostructures with tailored properties. Specifically, we will extend the technology of making gate-defined quantum dots in Bernal-stacked bilayer graphene (BLG) to more complex vdW heterostructures; in particular, heterostructures composed of BLG proximity-coupled to transition metal dichalcogenides (TMDs) and twisted bilayer graphene (tBLG) near magic angle. By performing low-temperature quantum transport measurement through this type of devices, we will shed light on layer-dependent proximity-induced spin-orbit coupling in BLG quantum dots and gain insights on electron-electron interaction in charge islands and quantum dots in tBLG. This is interesting for both quantum technological applications, including e.g. spin-qubit control techniques and light-matter coupling schemes in BLG/TMD heterostructures, as well as from the fundamental point of view, as it allows studying important coupling strength and energy scales such as spin-orbit gap and short-range electron-electron interactions. The knowledge gained in this project will extend even further the potential of 2D vdW heterostructures for quantum technological applications.