Study on film bonding technology between different materials by etching of sacrifice layer

近年来，与诸如片上系统（SoC）和系统级封装（SiP）的键合技术相结合的新LSI制造技术已经被开发。其中，基于ELO工艺的半导体薄膜键合技术由于融合了大规模集成电路制造技术和半导体材料键合技术而备受研究者关注。本论文主要研究了半导体薄膜键合技术的一些基本问题，如半导体薄膜的剥离与键合、半导体薄膜的保护材料及其在双轴霍尔传感器中的应用。1）研究了半导体薄膜键合技术的基本问题。采用薄膜光刻胶作为半导体薄膜的保护材料，成功地从硅片上剥离出厚度约为0.5 μm ~ 6 μm、尺寸约为20 μm×20 μm ~ 500 μm×500 μm的GaAs薄膜。然后将其键合到Si、LiNbO_3衬底或金属表面上。2）利用X射线衍射仪和拉曼光谱对键合膜的结晶度进行了评估。比较键合前GaAs薄膜的晶格常数和半高宽的标准偏差，其值分别为11-30×10 ~ 4<-5>和1.4-5.6×10 ~ 4<-4>，是很小的。结果表明，键合工艺在GaAs薄膜中的应力分布在整个GaAs薄膜中是高度均匀的。3）采用键合工艺在Si衬底上制作了GaAs双轴霍尔传感器。基本的传感特性证明了这种双轴霍尔传感器的可行性。灵敏度分别为Bz为9.2 Ω/G和Bx为4.5 Ω/G。我们利用半导体薄膜键合技术开发了一种新型的传感器件。

Recently, the new LSI manufacturing technology combined with bonding technology such as system on chip (SoC), and system in package (SiP) has been developed. Among them, the semiconductor film bonding technology based on ELO process is drawing researcher attention because it fuses the LSI manufacturing technology and bonding technology of semiconductor material. In this research, we study some basic problems of the semiconductor film bonding technology such as releasing and bonding of thicker semiconductor film, the protective material of semiconductor film, and its application in fabricating two-axis Hall sensor. The brief results are as follows1) We studied the basic problems involved in semiconductor film bonding technology. We used film photoresist as protective material of the semiconductor film and successfully released a large number of GaAs film that thickness is about 0.5 μm 〜6 μm and size is about 20 μm×20 μm〜500 μm×500 μm form wafer. Then, we bonded it on the Si, LiNbO_3 substrates or metal surface. We also investigated releasing condition of the GaAs film with different thickness.2) We estimated crystallinity of bonded film by X-ray diffractometer and Raman spectral. Comparing the standard deviation of the lattice constant and the FWHM of GaAs film before bonding, these value are about 11-30×10^<-5> and 1.4-5.6×10^<-4> respectively and is very small. It indicates that the distribution of stress in the GaAs film by bonding process is highly uniform throughout entire GaAs film.3) We fabricated a two-axis Hall sensor of GaAs on a Si substrate by film bonding technology. The basic sensing characteristics demonstrated the feasibility of this two-axis Hall sensor. The sensitivity is about 9.2 Ω/G for Bz and 4.5 Ω/G for Bx respectively. We develop a novel sensing devices using the semiconductor film bonding technology.