Preparation of Phosphor thin films for Inorganic Electroluminescent Devices using Combnatrial Sputtering

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Newly developed Eu-activated Ba_3MgSi_2O_8 multicomponent oxide phosphors are shown to be promising as an emitting layer of blue-emitting thin-film EL devices. To examine this potential, PL and EL measurements were conducted on ((Ba_2SiO_4)_<1->x-(Mg_2SiO_4)x): Eu multicomponent oxide phosphor thin films deposited on BaTiO_3 ceramic sheets using a combinatorial rf magnetron sputtering deposition (rf-MSD). It was found that promoting the formation of a Ba_3MgSi_2O_8 host lattice by optimizing the chemical composition (Mg/(Ba+Mg) atomic ratio) in the phosphor thin-film preparation and by postannealing at a high temperature results in blue emissions being exhibited in both the PL and EL of Eu-activated Ba_3MgSi_2O_8 multicomponent oxide phosphors. Intense blue PL emission peaking at around 436 nm was observed from Ba_3MgSi_2O_8: Eu multicomponent oxide phosphor thin films that were postannealed at 1000℃ in an Ar+H_2(5%) gas atmosphere. A bluish-green EL emission corresponding to CIE chromaticity coordinates of (x=0.24, y=0.29) was exhibited from an EL device fabricated using a Ba_3MgSi_2O_8: Eu thin film postannealed at 1000℃ as the emitting layer. In addition, Blue-emitting oxide phosphors for thin-film electroluminescent (TFEL) devices were newly developed using Bi-activated multicomponent oxides. An intense photoluminescence for blue emission was observed from Bi-activated indate phosphor thin films optimized the deposition and postannealing conditions. The blue emission peak was also observed in TFEL devices fabricated using a Bi-activated indate phosphor thin-film emitting layer postannealed at a temperature above approximately 900℃