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Preparation of Phosphor thin films for Inorganic Electroluminescent Devices using Combnatrial Sputtering

组合溅射制备无机电致发光器件用荧光粉薄膜

基本信息

批准号：
18560704
负责人：
MIYATA Toshihiro
金额：
$ 2.48万
依托单位：
Kanazawa Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2006
资助国家：
日本
起止时间：
2006 至 2007
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18560704/
关键词：
Thin Film Electroluminescence Combinatrial Sputtering Phosphor

项目摘要

Newly developed Eu-activated Ba_3MgSi_2O_8 multicomponent oxide phosphors are shown to be promising as an emitting layer of blue-emitting thin-film EL devices. To examine this potential, PL and EL measurements were conducted on ((Ba_2SiO_4)_<1->x-(Mg_2SiO_4)x): Eu multicomponent oxide phosphor thin films deposited on BaTiO_3 ceramic sheets using a combinatorial rf magnetron sputtering deposition (rf-MSD). It was found that promoting the formation of a Ba_3MgSi_2O_8 host lattice by optimizing the chemical composition (Mg/(Ba+Mg) atomic ratio) in the phosphor thin-film preparation and by postannealing at a high temperature results in blue emissions being exhibited in both the PL and EL of Eu-activated Ba_3MgSi_2O_8 multicomponent oxide phosphors. Intense blue PL emission peaking at around 436 nm was observed from Ba_3MgSi_2O_8: Eu multicomponent oxide phosphor thin films that were postannealed at 1000℃ in an Ar+H_2(5%) gas atmosphere. A bluish-green EL emission corresponding to CIE chromaticity coordinates of (x=0.24, y=0.29) was exhibited from an EL device fabricated using a Ba_3MgSi_2O_8: Eu thin film postannealed at 1000℃ as the emitting layer. In addition, Blue-emitting oxide phosphors for thin-film electroluminescent (TFEL) devices were newly developed using Bi-activated multicomponent oxides. An intense photoluminescence for blue emission was observed from Bi-activated indate phosphor thin films optimized the deposition and postannealing conditions. The blue emission peak was also observed in TFEL devices fabricated using a Bi-activated indate phosphor thin-film emitting layer postannealed at a temperature above approximately 900℃

新开发的Eu激活的Ba_3MgSi_2O_8多元氧化物荧光粉作为蓝光薄膜电致发光器件的发光层具有很好的应用前景。为了验证这种可能性，我们采用<1->射频磁控溅射沉积（rf-MSD）技术在BaTiO 3陶瓷片上制备了（（Ba_2SiO_4）_ x-（Mg_2SiO_4）_x）：Eu多组分氧化物荧光薄膜，并对其进行了PL和EL测试。结果表明，通过优化Ba_3MgSi_2O_8基质的化学组成（Mg/（Ba+Mg）原子比）和高温退火处理，可使Eu激活的Ba_3MgSi_2O_8多组分氧化物荧光粉在PL和EL中均呈现蓝色发光。在Ar+H_2（5%）气氛中1000℃退火处理的Ba_3MgSi_2O_8：Eu多组分氧化物荧光粉薄膜，观察到峰值在436 nm附近的强蓝光发射。用1000℃退火后的Ba_3MgSi_2O_8：Eu薄膜作为发光层制备的电致发光器件显示出对应于CIE色坐标（x=0.24，y=0.29）的蓝绿色电致发光。此外，新开发的蓝色发光薄膜电致发光（TFEL）器件的氧化物荧光粉使用Bi激活的多组分氧化物。通过优化沉积和退火工艺条件，获得了铋激活铟酸盐荧光粉薄膜，并观察到了强烈的蓝光发射。采用Bi激活铟酸盐荧光粉薄膜发光层，在900℃以上退火处理的薄膜电致发光器件中也观察到了蓝色发光峰