Preparation of Phosphor thin films for Inorganic Electroluminescent Devices using Combnatrial Sputtering

组合溅射制备无机电致发光器件用荧光粉薄膜

基本信息

批准号：
18560704
负责人：
MIYATA Toshihiro
金额：
$ 2.48万
依托单位：
Kanazawa Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2006
资助国家：
日本
起止时间：
2006 至 2007
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18560704/
关键词：
Thin Film Electroluminescence Combinatrial Sputtering Phosphor

项目摘要

Newly developed Eu-activated Ba_3MgSi_2O_8 multicomponent oxide phosphors are shown to be promising as an emitting layer of blue-emitting thin-film EL devices. To examine this potential, PL and EL measurements were conducted on ((Ba_2SiO_4)_<1->x-(Mg_2SiO_4)x): Eu multicomponent oxide phosphor thin films deposited on BaTiO_3 ceramic sheets using a combinatorial rf magnetron sputtering deposition (rf-MSD). It was found that promoting the formation of a Ba_3MgSi_2O_8 host lattice by optimizing the chemical composition (Mg/(Ba+Mg) atomic ratio) in the phosphor thin-film preparation and by postannealing at a high temperature results in blue emissions being exhibited in both the PL and EL of Eu-activated Ba_3MgSi_2O_8 multicomponent oxide phosphors. Intense blue PL emission peaking at around 436 nm was observed from Ba_3MgSi_2O_8: Eu multicomponent oxide phosphor thin films that were postannealed at 1000℃ in an Ar+H_2(5%) gas atmosphere. A bluish-green EL emission corresponding to CIE chromaticity coordinates of (x=0.24, y=0.29) was exhibited from an EL device fabricated using a Ba_3MgSi_2O_8: Eu thin film postannealed at 1000℃ as the emitting layer. In addition, Blue-emitting oxide phosphors for thin-film electroluminescent (TFEL) devices were newly developed using Bi-activated multicomponent oxides. An intense photoluminescence for blue emission was observed from Bi-activated indate phosphor thin films optimized the deposition and postannealing conditions. The blue emission peak was also observed in TFEL devices fabricated using a Bi-activated indate phosphor thin-film emitting layer postannealed at a temperature above approximately 900℃

新开发的EU激活的BA_3MGSI_2O_8多组分氧化物磷光被证明是有望作为蓝色发射薄膜EL设备的发射层。为了检查这种潜力，在（（BA_2SIO_4）_ <1-> X-（MG_2SIO_4）X上进行了PL和EL测量值：EU多组分氧化物氧化物磷光薄膜使用BATIO_3陶瓷板上沉积在BATIO_3陶瓷板上。发现发现，通过优化磷光薄膜制备中的化学成分（mg/（ba+mg）原子比）来促进BA_3MGSI_2O_8宿主晶格，并通过在EU-EU-eu-Actort of El-eu_____3mgs comement of blue温度结果中以高温结果在蓝色的温度上进行迅速播放的结果。从BA_3MGSI_2O_8：EU多组分氧化物磷光薄膜中观察到强烈的蓝PL发射峰值在436 nm处峰值，在AR+H_2（5％）气体气氛中以1000℃在1000℃处于1000℃时。蓝绿色EL发射对应于（x = 0.24，y = 0.29）的CIE色坐标，从使用BA_3MGSI_2O_8：EU薄膜以1000℃作为发射层制造的EL设备中暴露了EL设备。另外，使用双活化的多组分氧化物新开发了用于薄膜电致（TFEL）设备的蓝色发射氧化物磷。从双重激活的磷光薄膜中观察到了蓝色发射的激烈发光，优化了沉积和后启动后。还观察到在使用Bi Actrated Indate磷脂薄膜发射层的TFEL设备中观察到的蓝色发射峰，该温度在大约900℃的温度下发射了层。