权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Study on MBE technologies and optical properties of novel optical functional GeC/Si thin -epitaxial films and nanocrystal assemblies.

新型光学功能GeC/Si薄膜及纳米晶组件的MBE技术及光学性能研究。

基本信息

批准号：
18360010
负责人：
NUNOSHITA Masahiro
金额：
$ 11.21万
依托单位：
Nara Institute of Science and Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2006
资助国家：
日本
起止时间：
2006 至 2007
项目状态：
已结题

项目摘要

As an aim at Si-compatible light emitting or quantum information devices, we have developed new nanotechnologies of forming precisely 2-D nano-crystal (NC) assemblies of GeC, β-FeSi_2 or Si on Si (100) substrates by fusing unique bottom-up-type and top-down-type nanotechnologies such as molecular beam epitaxy (MBE), solid phase epitaxy (SPE) or ion-implantation method, respectively. The microscopic structural and optical properties of their NC assemblies were evaluated. The brief results of this research project are as follows;(1) For the fused nanotechnology, a novel 'nanomask' of an ultra-thin (〜2 nm thick) Si film with 2D-assembled via-holes 7±2 nm in diameter on a Si (100) wafer was developed by means of a self-assembled bio-nanoprocess using proteins 'ferritin'. It was used successfully for conventional MBE, SPE and low-energy ion-implantation techniques.(2) Through very small and almost 2D-ordered via-holes of the Si nanomask on the Si (100) substrate, very small-size and 2-D ass … More embled Ge_<1-x>C_x NCs were grown by solid-source MBE with an arc-plasma gun as a C molecular beam source. The MBE-grown Ge1_<-x>Cx NCs were obtained up to a substitutional C content of x=3.2%. In the photoluminescence (PL) spectra at 7K, a PL peak appeared around 1.3 μm due to the quantum confinement effect. We could not make clear the origin of the extremely large band bowing so far.(3) 2-D Si-NC assemblies in SiO_2 thin films were synthesized by using very-low-energy Si^+ ion-implantation (down to 0.6keV) and sequential annealing with a Nd:YAG pulsed laser. As a result, almost ordered Si-NC assemblies with very small and uniform size (3.0±0.3 nm in diameter) and inter-particle separation (5 to 6 nm) were obtained by the transcription of the Si nanomask pattern. The PL spectra of Si-NCs implanted at 0.6keV were observed with a peak of 2lleV and an FWHM of 78 nm.(4) Very smallsize and high-density β-FeSi_2 NC assemblies were formed on a Si (100) substrate using an embedded solid-phase epitaxy (SPE) and bio-nanoprocess with proteins 'ferritin' containing Fe_2O_3 cores 7 nm in diameter. The β-FeSi_2 NCs were grown by SPE at 500-800℃ for 1 hr in an ultra-high vacuum chamber after embedded in an amorphous Si thin film. The β-FeSi_2 NC assemblies were almost 2D-ordered with a uniform diameter 6.3±0.3 nm and a density 6.2×10^ (11) dots/cm^2, and their PL spectra with a peak 0.91 eV were obtained Less

为了实现与Si相兼容的发光或量子信息器件，我们发展了一种新的纳米技术，即通过将分子束外延（MBE）、固相外延（SPE）或离子注入等独特的自底向上和自顶向下纳米技术相结合，在Si（100）衬底上精确地形成GeC、β-FeSi_2或Si的二维纳米晶（NC）组装体。评价了其NC组件的微观结构和光学性能。本研究的主要成果如下：（1）在融合纳米技术方面，利用蛋白质“铁蛋白”自组装生物纳米工艺，在Si（100）晶片上制备了一种新型的超薄（约1.2 nm厚）Si薄膜纳米掩模，该薄膜具有直径为7±2 nm的二维组装通孔。它被成功地用于传统的MBE，SPE和低能离子注入技术。(2)通过在Si（100）衬底上的Si纳米掩模上的非常小且几乎是二维有序的通孔， ...更多信息采用<1-x>电弧等离子体枪作为碳分子束源，用固体源分子束外延生长了Ge_ C_x纳米晶。分子束外延生长的Ge_（1_<-x>x）C_x纳米碳的取代碳含量为x= 3.2%。在7 K的光致发光（PL）谱中，由于量子限制效应，在1.3 μm附近出现了一个PL峰。到目前为止，我们还不能弄清楚这个巨大乐队鞠躬的起源。(3)采用能量低至0.6keV的Si^+离子注入和Nd：YAG脉冲激光退火的方法，在SiO_2薄膜中制备了二维Si-NC组装体。结果表明，通过对Si纳米掩模图案的转录，得到了尺寸均匀（3.0±0.3 nm）、颗粒间距为5 ~ 6 nm的有序Si-NC组装体。观察到0.6keV注入Si纳米晶的PL谱，其峰值为21 leV，半高宽为78 nm。(4)利用固相外延（SPE）技术和生物纳米技术，在Si（100）衬底上制备了具有直径为7 nm的Fe 2 O3核的蛋白质“铁蛋白”纳米组装体。采用固相萃取法在500-800℃超高真空室中生长了包埋在非晶Si薄膜中的β-FeSi_2纳米晶。β-FeSi_2 NC组装体几乎是二维有序的，直径为6.3±0.3 nm，密度为6.2×10^（11）dots/cm^2，PL谱峰为0.91 eV。