Microscopic structurte, electrical and optical properties of ferroelectric ultra-thin films

铁电超薄膜的微观结构、电学和光学性质

• 批准号: 11450251
• 负责人: NUNOSHITA Masahiro
• 金额: $ 9.47万
• 依托单位: NARA INSTITUTE OF SCIENCE AND TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450251/
• 关键词: Ferroelectric thin film; PZT; PLZT; Perovsklte; Near-field opticdal microscopy; plezoelectric SPM; X-ray diffraction; Diaphragm micro sensor; 強誘導体薄膜; 強誘電体極薄膜; チタン酸ジルコン酸鉛[PZT]; チタン酸ジルコン酸ランタン鉛[PLZT]; 近接場光学顕微鏡(SNOM); 原子間力顕微鏡(AFM); X線回折; ダイヤフラム

Ferroelectric ultra-thin films were grown and characterized by means of novel microscopic measurement methods. PZT(52/48) which is suitable for ferroelectric memory devices and PLZT(8/65/35) which is suitable for electro-optic devices were chosen as the target materials. Near-field optical microscopy and piezoelectric SPM were applied to investigate microscopic optical and ferroelectric properties of the PZT and PLZT ultra-thin films. The results of the research project are as follows ;1. The both of the size of the grains and the remanent polarization of the PZT(52/48) and PLZT(8/65/35) thin films on Pt/Ti/Si0_2 increase with an increase of the film thickness.2. A specific contrast is observed in the SNOM images of the PZT and PLZT thin films. The contrast may be in relation to the ferroelectricity.3. The PZT and PLZT thin films are preferably (111)-oriented polycrystalline on Pt/Ti/Si0_2 and ITO/Si0_2 substrates. The films include pyrochbre phase or PbO_2 extraction. On the other hand, A high-quality (FWHM of XRD rocking curve is smaller than 200arcsec) (001)-oriented epitaxial P(L)ZT films are obtained on STO(001) substrates.4. By means of a piezoelectric SPM observation, the existence of ferroelectricity in P(L)ZT ultra-thin films was confirmed. The size of the domain is smaller than 1 um. However, the deterioration of the retention property was observed in ultra-thin films.5. The problem of the artifacts observed in SNOM images was discussed experimentally and theoretically.6. By means of a multi-step deposition, an arrayed PZT diaphragm micro sensor was developed.

铁电超薄膜的生长和表征通过新的显微测量方法。选择适合于铁电存储器件的PZT（52/48）和适合于电光器件的PLZT（8/65/35）作为靶材。利用近场光学显微镜和压电扫描探针显微镜研究了PZT和PLZT超薄膜的微观光学和铁电性能。本课题的主要研究成果如下：1. Pt/Ti/SiO_2上PZT（52/48）和PLZT（8/65/35）薄膜的晶粒尺寸和极化强度均随薄膜厚度的增加而增大.在PZT和PLZT薄膜的SNOM图像中观察到特定的对比度。这种反差可能与铁电性有关.在Pt/Ti/SiO_2和ITO/SiO_2衬底上制备的PZT和PLZT薄膜均为（111）取向的多晶薄膜。薄膜包括烧成相或PbO_2萃取。另一方面，在STO（001）衬底上获得了高质量的（001）取向P（L）ZT外延薄膜（XRD摇摆曲线的半高宽小于200 arcsec）.通过压电扫描探针显微镜观察，证实了P（L）ZT超薄膜中存在铁电性。畴的尺寸小于1 μ m。然而，在超薄膜中观察到保持性能的恶化.对SNOM图像中的伪影问题进行了实验和理论分析.通过多步沉积的方法，研制出阵列式压电薄膜微传感器。

项目成果

Xin-Shab Li et al.: "Characterization of Lead zirconate titsnate thin films deposited at low temperature by reative sputtiring"Thin Solid Films.

Xin-Shab Li 等人：“通过反应溅射在低温下沉积的锆酸铅钛酸铅薄膜的表征”固体薄膜。

X.-S. Li, T. Tanaka, Y. Suzuki: "Lead zirconate titanate (PZT) thin film deposition in facing target sputtering"J. Vac. Soc. Jpn.. 42,No.3. 257-260 (1999)

X.-S。

K. Yamashita, H. Katata, M. Okuyama, H. Miyoshi, G. Kato, S. Aoyagi, Y. Suzuki: "High-Directivity Array of Ultrasonic Micro Sensor Using PZT Thin Film on Si Diaphragm"International Conference on Solid State Sensors and Actuators (Transducers 01/Euro Senso

K. Yamashita、H. Katata、M. Okuyama、H. Miyoshi、G. Kato、S. Aoyagi、Y. Suzuki：“利用硅膜片上 PZT 薄膜的超声波微传感器高方向性阵列”国际固态会议

布下 正宏, 太田 淳, 徳田 崇: "強誘電体のナノ構造とそのメゾスコピックな特性"マテリアル インテグラーション. 5月号. 29-37 (2001)

Masahiro Nunoshita、Jun Ota、Takashi Tokuda：“铁电材料的纳米结构及其介观特性”Materials Integration 5 月号（2001 年）。

笹川 清隆, 中野 貴司, 徳田 崇, 太田 淳, 布下 正宏: "反射型近接場光学顕微鏡における偏光方向の影響"第48回応用物理学関係連合講演会 29pZX6. No.3. 1043 (2001)

Kiyotaka Sasakawa、Takashi Nakano、Takashi Tokuda、Jun Ota、Masahiro Nunoshita：“反射近场光学显微镜中偏振方向的影响”第 48 届应用物理协会会议 29pZX6 第 3 期（2001 年）。