Local state analysis of interfaces and defect regions by spherical aberration corrected STEM-EELS

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New spatial-resolved spectroscopy analyzing local state of crystal materials has been developed by combining electron energy-loss spectroscopy with spherical aberration corrected scanning transmission electron microscopy. Using this method, we successfully detected the change of electronic structure arising from structural deformation in local area of transition metal oxides. The local changes of electronic structure and chemical composition of epitaxial thin films grown on single crystal substrates as well as the structures in the vicinity of interfaces have been analyzed.