Non-equilibrium phases appearing on semiconductor surfaces at low temperatures induced by electronic excitation

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Just before starting the present study (2005), we had found that the structure of clean Si(001)c(4×2) surfaces undergoes the disordering induced by the irradiation of low-energy electron beam only below about 50K. In this study we have succeeded to find another example of electron-beam-irradiation induced disordering of the surface structure on the Ge(111)-Sn adsorption system only below 40K. We have clarified the conditions for the occurrence of this phenomenon, and proposed its microscopic mechanism.