Quantitative investigation of the zero-field spin splitting in semiconductor quantum wells and its application to mesoscopic physics

半导体中的自旋轨道相互作用可以被认为是下一代电子学（如量子信息器件）的基本原理。本研究选择In_<0.53>Ga_<0.47>As/In_<0.52>Al_<0.48>As量子阱系统作为自旋电子学的标准材料，通过低温下的电子输运测量，包括自旋干涉效应，定量地揭示了自旋轨道参数。

Spin-orbit interaction in semiconductor can be considered as a fundamental principle on which next generation electronics, such as quantum information devices, are based. In this research, we chose the In_<0.53>Ga_<0.47>As/In_<0.52>Al_<0.48>As quantum well system as a standard material for spintronics and revealed the spin-orbit parameters quantitatively by electron transport measurements at low temperatures including spin interference effect.