Angle-resolved photoemission study on Fermi surface of quantum well structures based on strongly correlated oxides
基于强关联氧化物的量子阱结构费米面角分辨光电子发射研究
基本信息
- 批准号:19684010
- 负责人:
- 金额:$ 12.98万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Young Scientists (A)
- 财政年份:2007
- 资助国家:日本
- 起止时间:2007 至 2010
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The quantum confinement of strongly correlated electrons in artificial structures provides a platform for studying the behavior of correlated Fermi-liquid states in reduced dimensions. The successful creation and control of metallic quantum well states in artificial structures of a strongly correlated oxide reveals the unique behavior of two-dimensional electron liquid states, characterized by the orbital-selective quantization originating from the anisotropic orbital character of the V 3d states and unusual band renormalization of the subbands near the Fermi level, that reflect complex interactions in the quantum well.
人造结构中强相关电子的量子限制为研究相关的费米 - 流动状态在降低的尺寸中的行为提供了一个平台。在氧化氧化物密切相关的人造结构中,成功的金属量子井状态的成功创造和控制揭示了二维电子液态状态的独特行为,其特征是轨道选择性量化源自V 3D状态的各向异性轨道轨道轨道,并在Fermi级别附近的子带的相互作用,这是量子相互作用的不寻常的带renumaliations的量子。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Band Diagrams of Perovskite Oxide Heterojunctions
钙钛矿氧化物异质结的能带图
- DOI:
- 发表时间:2008
- 期刊:
- 影响因子:0
- 作者:H. Kumigashira;M. Minohara;K. Yoshimatsu;and M. Oshima
- 通讯作者:and M. Oshima
その場放射光電子分光による強相関酸化物超構造の電子状態研究
使用原位发射光电子能谱研究强相关氧化物超结构的电子态
- DOI:
- 发表时间:2009
- 期刊:
- 影响因子:0
- 作者:内山真伸;T.Harada;組頭広志
- 通讯作者:組頭広志
Epitaxial growth and surface metallic nature of LaNIO3 thin films
- DOI:10.1063/1.2955534
- 发表时间:2008-07
- 期刊:
- 影响因子:4
- 作者:K. Tsubouchi;I. Ohkubo;H. Kumigashira;Y. Matsumoto;T. Ohnishi;M. Lippmaa;H. Koinuma;M. Oshima
- 通讯作者:K. Tsubouchi;I. Ohkubo;H. Kumigashira;Y. Matsumoto;T. Ohnishi;M. Lippmaa;H. Koinuma;M. Oshima
Madelung potentials and covalency effect in strained La_<1-x>Sr_xMnO_3 thin films studied by core-level photoemission spectroscopy
芯级光电子能谱研究应变La_<1-x>Sr_xMnO_3薄膜中的马德隆势和共价效应
- DOI:
- 发表时间:2009
- 期刊:
- 影响因子:0
- 作者:H.Wadati;A.Maniwa;A.Chikamatsu;H.Kumigashira;M.Oshima;T.Mizokawa;A.Fujimori;G.A.Sawatzky
- 通讯作者:G.A.Sawatzky
Magnetic domain structure of technically patterned ferromagnet La_<1-x>Sr_xMnO_3 thin film
技术图案化铁磁体La_<1-x>Sr_xMnO_3薄膜的磁畴结构
- DOI:
- 发表时间:2007
- 期刊:
- 影响因子:0
- 作者:M. Kubota;T. Taniuchi;K. Yasuhara;H. Kumigashira;K. Ono;M. Oshima;H. Okazaki;T. Wakita;N. Yokoya;H. Akinaga;M. Lippmaa;M. Kawasaki;and H. Koinuma
- 通讯作者:and H. Koinuma
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KUMIGASHIRA Hiroshi其他文献
Crystal structure and electronic property modification of layered calcium ruthenium oxyfluoride thin films
层状氟氧化钙钌薄膜的晶体结构及电子性能修饰
- DOI:
- 发表时间:
2022 - 期刊:
- 影响因子:0
- 作者:
CHIKAMATSU Akira;FUKUMA Shota;KATAYAMA Tsukasa;MARUYAMA Takahiro;YANAGISAWA Keiichi;KIMOTO Koji;KITAMURA Miho;HORIBA Koji;KUMIGASHIRA Hiroshi;HIROSE Yasushi;HASEGAWA Tetsuya - 通讯作者:
HASEGAWA Tetsuya
KUMIGASHIRA Hiroshi的其他文献
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{{ truncateString('KUMIGASHIRA Hiroshi', 18)}}的其他基金
Analysis of the surfaces and interfaces of strongly correlated oxide based on the international platform of next-generation synchrotron light(Fostering Joint International Research)
基于下一代同步加速器光国际平台的强相关氧化物表面和界面分析(促进国际联合研究)
- 批准号:
16KK0107 - 财政年份:2017
- 资助金额:
$ 12.98万 - 项目类别:
Fund for the Promotion of Joint International Research (Fostering Joint International Research)
Novel two-dimensional electron liquid states in quantum well structures of strongly-correlated oxides
强相关氧化物量子阱结构中的新型二维电子液态
- 批准号:
16H02115 - 财政年份:2016
- 资助金额:
$ 12.98万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Anomalous quantization behavior of strongly correlated electrons in oxide quantum-well structures
氧化物量子阱结构中强相关电子的反常量子化行为
- 批准号:
25287095 - 财政年份:2013
- 资助金额:
$ 12.98万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
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Elucidation of Collective Electronic Phase Transition Induced at Device Interfaces Based on Correlated Oxides
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- 批准号:
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Grant-in-Aid for Challenging Exploratory Research
Development of novel properties of strongly-correlated oxide nano-devices under electric field
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- 批准号:
15H05499 - 财政年份:2015
- 资助金额:
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Grant-in-Aid for Young Scientists (A)
Farbrication of polar superstructures to develop new photovoltaic materials
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- 批准号:
15H05426 - 财政年份:2015
- 资助金额:
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Study on ferroelectric resistive switching in ferroelectric tunnel junctions and ferroelectric diodes
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- 批准号:
26286055 - 财政年份:2014
- 资助金额:
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