Domain wall motion devices by controlling spin current distribution

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We developed the micromagnetic simulation including non-uniform spin current distribution, and investigated current-induced domain wall motion in a nanowire. As a result, in an in-plane magnetization nanowire, the influences of notch shape and pulse current on the critical current density driving domain wall motion were clarified. Moreover, the multi-bit motion in a nanowire with perpendicular magnetic anisotropy was demonstrated, and a new issue to realize a nanowire memory was suggested.