Basic study of high-density nanowire memories by using ferrimagnetic multilayers

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In order to reduce a critical current density in nanowire memories based on spin-transfer torque effect, the effect of material parameters on the critical current density has been investigate. In order to realize high-density bit, the effect of nanowire structure on recording density has also been studied. As a result, the redction of the saturation magnetization is an effective way to reduce the critical current density, and we have proposed that a ferrimagnetic material near the compensation composition is a strong candidate for the low current operation. Moreover, we have proposed the bilayer nanowire consisting of a granular layer and a continuous layer to achieve high-density bit further than that of single-layered nanowires.