Development of Nonvolatile FET Memory with Helical Polymer

螺旋聚合物非易失性 FET 存储器的开发

• 批准号: 20350085
• 负责人: KOBAYASHI Norihisa
• 金额: $ 12.23万
• 依托单位: Chiba University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20350085/
• 关键词: 有機電子材料・素子; FETメモリ; らせん高分子; ナノ材料; 生体材料; ポリペプチド

Memory devices were fabricated with polypeptide and DNA as a memory material which have helical secondary structure. In the case of polypeptide, it was revealed that the helical tertiary structure can be increased by optimizing the intermolecular interaction. When the helical tertiary structure was much incorporated into the film, the memory device showed driving at lower electric field than that in the absence of the structure. Since the structure can be increased by molecular alignment processes, the device fabricated with thick film (4μm) by the process was driven at same voltage to that of thin film (700nm) prepared by other process. As the results, the yield rate of the device was improved from 50～70 % to 100% due to decrease in pinhole. In the case of DNA, complexing DNA with surfactant was carried out in order to remove the ion. In the OTFT fabricated with DNA-surfactant complex, high on/off ratio was obtained because of decrease in the off-current. Further, when PMMA was layered on the DNA-surfactant layer, pentacene deposited on the PMMA surface as a semiconductor layer showed large grain and high crystallinity. As the results, 104 of on/off ratio at 10V and 1000 hours of the retention time were achieved due to improve the on-current.

以多肽和DNA为记忆材料，制备了具有螺旋二级结构的记忆器件。在多肽的情况下，它揭示了螺旋三级结构可以通过优化分子间的相互作用来增加。当螺旋三级结构被更多地并入到膜中时，存储器件显示出在比不存在该结构的情况下更低的电场下的驱动。由于分子取向工艺可以增加器件的结构，因此用该工艺制备的厚膜（4μm）器件与用其它工艺制备的薄膜（700 nm）器件在相同的电压下驱动。结果表明，由于针孔减少，器件的成品率从50~ 70%提高到100%。在DNA的情况下，进行DNA与表面活性剂的络合以除去离子。在用DNA-表面活性剂复合物制备的OTFT中，由于关断电流的减小而获得高的开/关比。此外，当PMMA层叠在DNA-表面活性剂层上时，沉积在PMMA表面上作为半导体层的并五苯显示出大晶粒和高结晶度。结果，由于改善了导通电流，在10 V下实现了104的开/关比和1000小时的保留时间。

项目成果

平成22年度文部科学大臣表彰科学技術賞,文部科学大臣,鎌田俊英,植村聖, 他,2010/04/13

2010年文部科学大臣科学技术表彰奖文部科学大臣蒲田俊英、植村清等人 2010/04/13

有機半導体デバイス -基礎から最先端デバイスまで-

有机半导体器件——从基础到尖端器件——

• 发表时间: 2009
• 作者: R. Takagi;K. Miyagawa;K. Kanoda;B. Zhou;A. Kobayashi;and H. Kobayashi;植村聖(分担)
• 通讯作者: 植村聖(分担)

Memory Mechanism of Printable Ferroelectric TFT Memory with Tertiary Structured Po117-peptide as a Dielectric Layer

以三级结构Po117肽作为介电层的可印刷铁电TFT存储器的存储机制

• 发表时间: 2009
• 期刊: Synthetic Metals (印刷中)
• 作者: K. Yasuhara;S. Miki;H. Nakazono;A. Ohta;J. Kikuchi;Norihisa KOBAYASHI 他
• 通讯作者: Norihisa KOBAYASHI 他

Stretching of(DNA/Functional Molecules)Complex between Electrodes Toward DNA Molecular Wire

电极之间（DNA/功能分子）复合物向 DNA 分子线的拉伸

• 发表时间: 2009
• 作者: K.Yasuhara;Z.Wang;T.Ishikawa;J.Kikuchi;Y.Sasaki;S.Hiyama;Y.Moritani;T.Suda;N.Kobayashi
• 通讯作者: N.Kobayashi

次世代共役ポリマーの超階層制御と革新機能

新一代共轭聚合物的超层次控制与创新功能

• 发表时间: 2009
• 作者: 赤木和夫(監修;分担執筆)
• 通讯作者: 分担執筆)