Development of Nonvolatile FET Memory with Helical Polymer

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Memory devices were fabricated with polypeptide and DNA as a memory material which have helical secondary structure. In the case of polypeptide, it was revealed that the helical tertiary structure can be increased by optimizing the intermolecular interaction. When the helical tertiary structure was much incorporated into the film, the memory device showed driving at lower electric field than that in the absence of the structure. Since the structure can be increased by molecular alignment processes, the device fabricated with thick film (4μm) by the process was driven at same voltage to that of thin film (700nm) prepared by other process. As the results, the yield rate of the device was improved from 50～70 % to 100% due to decrease in pinhole. In the case of DNA, complexing DNA with surfactant was carried out in order to remove the ion. In the OTFT fabricated with DNA-surfactant complex, high on/off ratio was obtained because of decrease in the off-current. Further, when PMMA was layered on the DNA-surfactant layer, pentacene deposited on the PMMA surface as a semiconductor layer showed large grain and high crystallinity. As the results, 104 of on/off ratio at 10V and 1000 hours of the retention time were achieved due to improve the on-current.