Development of Nonvolatile FET Memory with Helical Polymer

螺旋聚合物非易失性 FET 存储器的开发

• 批准号: 20350085
• 负责人: KOBAYASHI Norihisa
• 金额: $ 12.23万
• 依托单位: Chiba University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20350085/
• 关键词: 有機電子材料・素子; FETメモリ; らせん高分子; ナノ材料; 生体材料; ポリペプチド

Memory devices were fabricated with polypeptide and DNA as a memory material which have helical secondary structure. In the case of polypeptide, it was revealed that the helical tertiary structure can be increased by optimizing the intermolecular interaction. When the helical tertiary structure was much incorporated into the film, the memory device showed driving at lower electric field than that in the absence of the structure. Since the structure can be increased by molecular alignment processes, the device fabricated with thick film (4μm) by the process was driven at same voltage to that of thin film (700nm) prepared by other process. As the results, the yield rate of the device was improved from 50～70 % to 100% due to decrease in pinhole. In the case of DNA, complexing DNA with surfactant was carried out in order to remove the ion. In the OTFT fabricated with DNA-surfactant complex, high on/off ratio was obtained because of decrease in the off-current. Further, when PMMA was layered on the DNA-surfactant layer, pentacene deposited on the PMMA surface as a semiconductor layer showed large grain and high crystallinity. As the results, 104 of on/off ratio at 10V and 1000 hours of the retention time were achieved due to improve the on-current.

记忆装置用多肽和DNA作为具有健康二级结构的记忆材料制造。在多肽的情况下，可以通过优化分子间相互作用来增加螺旋三级结构。当螺旋三级结构大量合并到膜中时，在没有结构的情况下，在电场下驱动的记忆装置在较低的电场上驱动。由于可以通过分子比对过程增加结构，因此用厚膜（4μm）制造的设备以与其他工艺制备的薄膜（700nm）相同的电压驱动。结果，由于针孔的下降，设备的产量率从50-70％提高到100％。在DNA的情况下，进行了与表面活性剂的络合DNA，以去除离子。在用DNA表面活性剂配合物制造的OTFT中，由于偏移的降低而获得了高/OFF比率。此外，当将PMMA分层在DNA表面活性剂层上时，五苯苯二苯在PMMA表面沉积在半导体层上，显示了较大的谷物和高结晶度。由于结果，由于改善了电流，在保留时间的10V和1000小时时的ON/OFT比率为104。

项目成果

平成22年度文部科学大臣表彰科学技術賞,文部科学大臣,鎌田俊英,植村聖, 他,2010/04/13

2010年文部科学大臣科学技术表彰奖文部科学大臣蒲田俊英、植村清等人 2010/04/13

Stretching of(DNA/Functional Molecules)Complex between Electrodes Toward DNA Molecular Wire

电极之间（DNA/功能分子）复合物向 DNA 分子线的拉伸

• 发表时间: 2009
• 作者: K.Yasuhara;Z.Wang;T.Ishikawa;J.Kikuchi;Y.Sasaki;S.Hiyama;Y.Moritani;T.Suda;N.Kobayashi
• 通讯作者: N.Kobayashi

有機半導体デバイス -基礎から最先端デバイスまで-

有机半导体器件——从基础到尖端器件——

• 发表时间: 2009
• 作者: R. Takagi;K. Miyagawa;K. Kanoda;B. Zhou;A. Kobayashi;and H. Kobayashi;植村聖(分担)
• 通讯作者: 植村聖(分担)

Memory Mechanism of Printable Ferroelectric TFT Memory with Tertiary Structured Po117-peptide as a Dielectric Layer

以三级结构Po117肽作为介电层的可印刷铁电TFT存储器的存储机制

• 发表时间: 2009
• 期刊: Synthetic Metals (印刷中)
• 作者: K. Yasuhara;S. Miki;H. Nakazono;A. Ohta;J. Kikuchi;Norihisa KOBAYASHI 他
• 通讯作者: Norihisa KOBAYASHI 他

次世代共役ポリマーの超階層制御と革新機能

新一代共轭聚合物的超层次控制与创新功能

• 发表时间: 2009
• 作者: 赤木和夫(監修;分担執筆)
• 通讯作者: 分担執筆)